-
公开(公告)号:US11901348B2
公开(公告)日:2024-02-13
申请号:US17376865
申请日:2021-07-15
发明人: Tae-Ho Kang , Bo-Seong Kim
IPC分类号: H01L25/18 , H01L25/00 , H01L23/00 , H01L23/16 , H01L25/065 , H01L21/48 , H01L23/498 , H01L21/56 , H01L23/31 , H01L23/24
CPC分类号: H01L25/18 , H01L21/4857 , H01L23/16 , H01L23/49822 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/48 , H01L24/73 , H01L24/96 , H01L25/065 , H01L25/50 , H01L21/568 , H01L23/24 , H01L23/3121 , H01L23/49816 , H01L24/32 , H01L24/83 , H01L2224/04105 , H01L2224/05554 , H01L2224/12105 , H01L2224/16227 , H01L2224/2402 , H01L2224/24101 , H01L2224/24137 , H01L2224/25171 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/49175 , H01L2224/73215 , H01L2224/73265 , H01L2224/73267 , H01L2224/73277 , H01L2224/83191 , H01L2225/0651 , H01L2225/06506 , H01L2225/06562 , H01L2924/00014 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/181 , H01L2924/18165 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19103 , H01L2924/19105 , H01L2924/00014 , H01L2224/45099 , H01L2924/181 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48145 , H01L2924/00012 , H01L2224/48091 , H01L2924/00014
摘要: A semiconductor package includes a mold substrate, at least one first semiconductor chip in the mold substrate and including chip pads, wiring bonding pads formed at a first surface of the mold substrate and connected to the chip pads by bonding wires, and a redistribution wiring layer covering the first surface of the mold substrate and including redistribution wirings connected to the wiring bonding wirings.
-
公开(公告)号:US20230411263A1
公开(公告)日:2023-12-21
申请号:US18332777
申请日:2023-06-12
发明人: SooHan PARK , KyungEun KIM , YouJin SHIN , HyeSun KIM
IPC分类号: H01L23/498 , H01L25/16 , H01L25/03 , H01L21/56 , H01L23/00 , H01L25/00 , H01L23/31 , H01L23/538
CPC分类号: H01L23/49827 , H01L25/16 , H01L25/03 , H01L21/568 , H01L21/561 , H01L24/24 , H01L24/96 , H01L24/82 , H01L25/50 , H01L23/3185 , H01L23/49816 , H01L23/5389 , H01L23/5385 , H01L2224/96 , H01L2224/24155 , H01L2224/24101 , H01L2224/82105 , H01L2224/2402 , H01L2224/82005
摘要: A modular semiconductor device comprises: an encapsulant layer with an encapsulant bottom surface and an encapsulant top surface, wherein the encapsulant layer comprises a component region and an interlayer connection region; wherein the semiconductor component comprises a component conductive pattern exposed from the encapsulant bottom surface; an interlayer connection array disposed within the interlayer connection region, wherein the interlayer connection array comprises one or more conductive vias each extending between the encapsulant bottom surface and the encapsulant top surface; and an interposer layer laminated on the encapsulant layer and having an interposer bottom surface and an interposer top surface, wherein the interposer top surface is in contact with the encapsulant bottom surface; wherein the interposer layer comprises an interposer conductive pattern on the interposer bottom surface, and an interposer interconnection structure electrically coupled to the component conductive pattern, the interposer conductive pattern and the one or more conductive vias.
-
公开(公告)号:US11810883B2
公开(公告)日:2023-11-07
申请号:US17325649
申请日:2021-05-20
发明人: Hsien-Wei Chen , Ming-Fa Chen
IPC分类号: H01L23/00 , H01L23/48 , H01L25/10 , H01L25/065 , H01L25/00 , H01L23/31 , H01L23/538
CPC分类号: H01L24/24 , H01L23/3135 , H01L23/481 , H01L24/25 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L23/5385 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/73 , H01L2224/08145 , H01L2224/16145 , H01L2224/2402 , H01L2224/24011 , H01L2224/24101 , H01L2224/24175 , H01L2224/25171 , H01L2224/32145 , H01L2224/73204 , H01L2224/73259 , H01L2224/73267 , H01L2225/06568 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058
摘要: A package structure including a device die structure, an insulating encapsulant, and a first redistribution circuit is provided. The device die structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die is stacked over and electrically connected to the second semiconductor die. The insulating encapsulant laterally encapsulates the device die structure. The insulating encapsulant includes a first encapsulation portion and a second encapsulation portion connected to the first encapsulation portion. The first encapsulation portion is disposed on the second semiconductor die and laterally encapsulates the first semiconductor die. The second encapsulation portion laterally encapsulates the first insulating encapsulation and the second semiconductor die. The first redistribution circuit structure is disposed on the device die structure and a first surface of the insulating encapsulant, and the first redistribution circuit structure is electrically connected to the device die structure.
-
公开(公告)号:US20180019191A1
公开(公告)日:2018-01-18
申请号:US15715515
申请日:2017-09-26
申请人: INVENSAS CORPORATION
发明人: Cyprian Emeka UZOH , Rajesh Katkar
IPC分类号: H01L23/498 , B23K1/00 , H01L25/065 , H01L23/00 , H01L23/31 , H01L21/48 , B32B15/01 , B23K35/22 , B23K35/02 , H01L25/10 , H01L25/00 , H01L21/56 , B23K101/40
CPC分类号: H01L23/49811 , B23K1/0016 , B23K35/0244 , B23K35/0266 , B23K35/22 , B23K2101/40 , B32B15/01 , H01L21/4853 , H01L21/56 , H01L21/563 , H01L21/565 , H01L23/3114 , H01L23/3135 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/73 , H01L24/742 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/98 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/03 , H01L2224/03001 , H01L2224/03009 , H01L2224/03318 , H01L2224/0332 , H01L2224/0333 , H01L2224/03334 , H01L2224/0348 , H01L2224/03848 , H01L2224/03849 , H01L2224/039 , H01L2224/03901 , H01L2224/0391 , H01L2224/04105 , H01L2224/05022 , H01L2224/051 , H01L2224/05294 , H01L2224/05547 , H01L2224/05567 , H01L2224/05573 , H01L2224/05582 , H01L2224/056 , H01L2224/05794 , H01L2224/05839 , H01L2224/05844 , H01L2224/05847 , H01L2224/05855 , H01L2224/0603 , H01L2224/06102 , H01L2224/10145 , H01L2224/11001 , H01L2224/11005 , H01L2224/11009 , H01L2224/111 , H01L2224/11318 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/1191 , H01L2224/13005 , H01L2224/13017 , H01L2224/13018 , H01L2224/13021 , H01L2224/13022 , H01L2224/13082 , H01L2224/131 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/1319 , H01L2224/13294 , H01L2224/133 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13561 , H01L2224/13562 , H01L2224/13565 , H01L2224/136 , H01L2224/13609 , H01L2224/13611 , H01L2224/1403 , H01L2224/16058 , H01L2224/16059 , H01L2224/16145 , H01L2224/16147 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/1701 , H01L2224/1703 , H01L2224/17181 , H01L2224/17505 , H01L2224/2101 , H01L2224/211 , H01L2224/2401 , H01L2224/2402 , H01L2224/24137 , H01L2224/24146 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/73267 , H01L2224/75253 , H01L2224/81 , H01L2224/81138 , H01L2224/81141 , H01L2224/81193 , H01L2224/81203 , H01L2224/8121 , H01L2224/8122 , H01L2224/81224 , H01L2224/81815 , H01L2224/82005 , H01L2224/82101 , H01L2224/82102 , H01L2224/82105 , H01L2224/83 , H01L2224/8385 , H01L2224/9211 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2924/07025 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/3512 , H01L2924/381 , H01L2924/3841
摘要: A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.
-
公开(公告)号:US09806051B2
公开(公告)日:2017-10-31
申请号:US14195930
申请日:2014-03-04
IPC分类号: H01L23/02 , H01L23/00 , H01L23/34 , H01L23/538 , H05K3/30 , H05K3/46 , H01L23/367 , H01L23/373 , H01L23/48 , H01L25/10 , H01L23/42 , H01L23/433 , H05K1/18 , H05K1/02 , H05K3/36
CPC分类号: H01L24/32 , H01L23/34 , H01L23/367 , H01L23/373 , H01L23/42 , H01L23/433 , H01L23/481 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/27 , H01L24/43 , H01L24/45 , H01L24/46 , H01L24/82 , H01L24/83 , H01L25/105 , H01L2224/04105 , H01L2224/05599 , H01L2224/2402 , H01L2224/24137 , H01L2224/24195 , H01L2224/2518 , H01L2224/2711 , H01L2224/2919 , H01L2224/32225 , H01L2224/32501 , H01L2224/43 , H01L2224/45015 , H01L2224/45147 , H01L2224/46 , H01L2224/80365 , H01L2224/85399 , H01L2224/92144 , H01L2225/1052 , H01L2225/1094 , H01L2924/00014 , H01L2924/1033 , H01L2924/1203 , H01L2924/1304 , H01L2924/13091 , H01L2924/1433 , H01L2924/207 , H05K1/0206 , H05K1/0209 , H05K1/183 , H05K1/185 , H05K3/301 , H05K3/305 , H05K3/306 , H05K3/366 , H05K3/4602 , H05K2201/0195 , H05K2201/09845 , H05K2203/302 , Y02P70/613
摘要: A package structure includes a first dielectric layer, semiconductor device(s) attached to the first dielectric layer, and an embedding material applied to the first dielectric layer so as to embed the semiconductor device therein, the embedding material comprising one or more additional dielectric layers. Vias are formed through the first dielectric layer to the at least one semiconductor device, with metal interconnects formed in the vias to form electrical interconnections to the semiconductor device. Input/output (I/O) connections are located on one end of the package structure on one or more outward facing surfaces thereof to provide a second level connection to an external circuit. The package structure interfits with a connector on the external circuit to mount the package perpendicular to the external circuit, with the I/O connections being electrically connected to the connector to form the second level connection to the external circuit.
-
6.
公开(公告)号:US20170200677A1
公开(公告)日:2017-07-13
申请号:US15469964
申请日:2017-03-27
申请人: INTEL CORPORATION
发明人: Qing Ma , Johanna M. Swan , Robert Starkston , John S. Guzek , Robert L. Sankman , Aleksandar Aleksov
IPC分类号: H01L23/538 , H01L25/065 , H01L21/683 , H01L21/48 , H01L23/498 , H01L23/15 , H01L23/00
CPC分类号: H01L23/5386 , B32B2457/08 , H01L21/4857 , H01L21/486 , H01L21/56 , H01L21/568 , H01L21/6835 , H01L23/15 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/5383 , H01L23/5384 , H01L23/5389 , H01L24/09 , H01L24/13 , H01L24/17 , H01L24/19 , H01L24/24 , H01L24/81 , H01L24/82 , H01L25/0655 , H01L2221/68345 , H01L2221/68359 , H01L2224/0401 , H01L2224/04105 , H01L2224/08238 , H01L2224/12105 , H01L2224/13025 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2402 , H01L2224/24137 , H01L2224/81192 , H01L2224/814 , H01L2224/81801 , H01L2224/8185 , H01L2224/8203 , H01L2224/821 , H01L2924/12042 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/15724 , H01L2924/15747 , H01L2924/18162 , H01L2924/2064 , H01L2924/20641 , H05K1/0298 , H05K1/0306 , H05K1/115 , H05K1/185 , H05K3/4688 , H05K2201/017 , H05K2203/1469 , Y10T156/1057 , H01L2924/014 , H01L2924/00
摘要: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.
-
公开(公告)号:US09443760B2
公开(公告)日:2016-09-13
申请号:US14543557
申请日:2014-11-17
发明人: Joachim Mahler , Thomas Bemmerl , Anton Prueckl
IPC分类号: H01L21/00 , H01L21/768 , H01L23/13 , H01L23/433 , H01L23/495 , H01L23/00 , H01L23/498 , H01L25/07 , H01L25/00 , H01L23/31
CPC分类号: H01L21/76877 , H01L21/76816 , H01L23/13 , H01L23/3107 , H01L23/4334 , H01L23/49513 , H01L23/49517 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/49833 , H01L24/05 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/82 , H01L24/92 , H01L25/072 , H01L25/50 , H01L2224/04026 , H01L2224/04034 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/224 , H01L2224/24011 , H01L2224/2402 , H01L2224/24105 , H01L2224/24155 , H01L2224/24175 , H01L2224/244 , H01L2224/291 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/29294 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/32225 , H01L2224/32245 , H01L2224/35 , H01L2224/352 , H01L2224/3701 , H01L2224/37113 , H01L2224/37118 , H01L2224/37139 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/3716 , H01L2224/37164 , H01L2224/37169 , H01L2224/40095 , H01L2224/40155 , H01L2224/40175 , H01L2224/40245 , H01L2224/40499 , H01L2224/41171 , H01L2224/48155 , H01L2224/48175 , H01L2224/49171 , H01L2224/73263 , H01L2224/73265 , H01L2224/73267 , H01L2224/82104 , H01L2224/82105 , H01L2224/82106 , H01L2224/83447 , H01L2224/83801 , H01L2224/8385 , H01L2224/83851 , H01L2224/84447 , H01L2224/92244 , H01L2224/92246 , H01L2224/92247 , H01L2924/00014 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2924/07811 , H01L2924/01028 , H01L2924/00012 , H01L2924/01023 , H01L2224/45099
摘要: An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.
摘要翻译: 电子设备包括与第一芯片载体隔离的第一芯片载体和第二芯片载体。 第一功率半导体芯片安装在电连接到第一芯片载体上。 第二功率半导体芯片安装在第二芯片载体上并电连接到第二芯片载体。 电绝缘材料被配置为至少部分地围绕第一功率半导体芯片和第二功率半导体芯片。 电互连被配置为将第一功率半导体芯片电连接到第二功率半导体芯片,其中电互连具有接触夹和电沉积导体中的至少一个。
-
公开(公告)号:US09318473B2
公开(公告)日:2016-04-19
申请号:US13451930
申请日:2012-04-20
IPC分类号: H01L23/34 , H01L23/48 , H01L23/52 , H01L29/40 , H01L25/16 , H01L23/498 , H01L21/56 , H01L23/538 , H01L23/29 , H01L25/00 , H01L23/00
CPC分类号: H01L25/16 , H01L21/561 , H01L23/295 , H01L23/49805 , H01L23/5389 , H01L23/562 , H01L24/24 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/743 , H01L24/82 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/50 , H01L2224/24011 , H01L2224/2402 , H01L2224/24137 , H01L2224/245 , H01L2224/27312 , H01L2224/27318 , H01L2224/2732 , H01L2224/27416 , H01L2224/27422 , H01L2224/27438 , H01L2224/2784 , H01L2224/27848 , H01L2224/29076 , H01L2224/29078 , H01L2224/2919 , H01L2224/2929 , H01L2224/29387 , H01L2224/2939 , H01L2224/30505 , H01L2224/3201 , H01L2224/32225 , H01L2224/32245 , H01L2224/33505 , H01L2224/48091 , H01L2224/48137 , H01L2224/4814 , H01L2224/48151 , H01L2224/73265 , H01L2224/73267 , H01L2224/82101 , H01L2224/82104 , H01L2224/82105 , H01L2224/82106 , H01L2224/83192 , H01L2224/83801 , H01L2224/83825 , H01L2224/83856 , H01L2224/83862 , H01L2224/83951 , H01L2224/92244 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2224/82 , H01L2924/00012 , H01L2224/83 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要: In a method of manufacturing a semiconductor device, a first semiconductor element is mounted on a carrier. A b-stage curable polymer is deposited on the carrier. A second semiconductor element is affixed on the polymer.
摘要翻译: 在制造半导体器件的方法中,第一半导体元件安装在载体上。 在载体上沉积b级可固化聚合物。 第二个半导体元件固定在聚合物上。
-
公开(公告)号:US09123687B2
公开(公告)日:2015-09-01
申请号:US13523525
申请日:2012-06-14
申请人: Henrik Ewe , Joachim Mahler , Anton Prueckl
发明人: Henrik Ewe , Joachim Mahler , Anton Prueckl
IPC分类号: H01L23/32 , H01L23/373 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/498 , H01L23/538 , H01L23/00
CPC分类号: H01L23/3735 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3121 , H01L23/49827 , H01L23/49833 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L24/97 , H01L2221/68345 , H01L2224/2402 , H01L2224/24137 , H01L2224/24226 , H01L2224/24246 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/76155 , H01L2224/82001 , H01L2224/82031 , H01L2224/82039 , H01L2224/82102 , H01L2224/92244 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , H01L2224/82 , H01L2924/00
摘要: One aspect is a method of manufacturing a semiconductor device and semiconductor device. One embodiment provides a plurality of modules. Each of the modules includes a carrier and at least one semiconductor chip attached to the carrier. A dielectric layer is applied to the modules to form a workpiece. The dielectric layer is structured to open at least one of the semiconductor chips. The workpiece is singulated to obtain a plurality of devices.
摘要翻译: 一个方面是制造半导体器件和半导体器件的方法。 一个实施例提供多个模块。 每个模块包括载体和连接到载体的至少一个半导体芯片。 将介电层施加到模块以形成工件。 介电层被构造成打开至少一个半导体芯片。 将工件分割成多个装置。
-
公开(公告)号:US09082438B2
公开(公告)日:2015-07-14
申请号:US14196370
申请日:2014-03-04
IPC分类号: H01L23/48 , G11B5/48 , H01L23/00 , H01L25/065 , H01L25/00 , H05K1/11 , H05K1/18 , H05K3/18 , H01L21/66 , H01L23/31 , H01L21/56
CPC分类号: G11B5/486 , H01L21/565 , H01L22/12 , H01L23/3121 , H01L24/24 , H01L24/25 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/82 , H01L24/83 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2224/05554 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/24011 , H01L2224/2402 , H01L2224/2405 , H01L2224/24051 , H01L2224/241 , H01L2224/24137 , H01L2224/24146 , H01L2224/24226 , H01L2224/245 , H01L2224/25175 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73267 , H01L2224/82009 , H01L2224/82039 , H01L2224/82101 , H01L2224/82105 , H01L2224/82931 , H01L2224/82947 , H01L2224/8385 , H01L2224/85 , H01L2224/92244 , H01L2225/06524 , H01L2225/06551 , H01L2225/06565 , H01L2924/00014 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/386 , H01L2924/3862 , H05K1/111 , H05K1/181 , H05K3/184 , H05K2201/0376 , H05K2201/09472 , H05K2203/1461 , Y02P70/611 , H01L2924/00012 , H01L2924/00 , H01L2224/82102 , H01L2224/8284 , H01L2224/0401 , H01L2224/45015 , H01L2924/207
摘要: One aspect of the present invention is a three-dimensional structure that has a concave-convex form including a gutter for wiring having at least partially a width of 20 μm or less, wherein at least a part of a wiring conductor is embedded in the gutter for wiring, and a wiring that extends in such a manner as to creep along the concave-convex form is provided.
摘要翻译: 本发明的一个方面是具有凹凸形状的三维结构,该凹凸形状包括具有至少部分宽度为20μm或更小的布线的布线槽,其中布线导体的至少一部分嵌入沟槽 并且布线以沿凹凸形状蠕动的方式延伸。
-
-
-
-
-
-
-
-
-