中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

232 records (took 0.048 seconds)

    SYSTEM AND METHOD OF VAPOR DEPOSITION
    152.
    发明申请
    SYSTEM AND METHOD OF VAPOR DEPOSITION 有权
    蒸气沉积系统与方法

    公开(公告)号：US20100099267A1

    公开(公告)日：2010-04-22

    申请号：US12254658

    申请日：2008-10-20

    Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    IPC: H01L21/31 ,  C23C16/00

    CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

    Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

    Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

    METHOD FOR FORMING A SACRIFICIAL SANDWICH STRUCTURE
    153.
    发明申请
    METHOD FOR FORMING A SACRIFICIAL SANDWICH STRUCTURE 有权
    形成三面体结构的方法

    公开(公告)号：US20100068874A1

    公开(公告)日：2010-03-18

    申请号：US12560164

    申请日：2009-09-15

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/28 ,  H01L21/306

    CPC classification number: H01L21/28123 ,  H01L21/0271 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32132 ,  H01L21/32139 ,  H01L29/517

    Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基底上形成第一材料层; 在所述第一材料层上形成第二材料层; 在所述第二材料层上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 将使用第一蚀刻溶液的第一湿蚀刻工艺应用于衬底，以使用图案化的抗蚀剂层作为掩模对牺牲层进行图案化，得到图案化的牺牲层; 将氨氢氧化物 - 过氧化氢 - 水混合物（APM）溶液施加到所述基底上以对所述第二材料层进行图案化，得到图案化的第二材料层; 使用第二蚀刻溶液将第二湿蚀刻工艺应用于所述衬底以对所述第一材料层进行图案化; 以及使用第三蚀刻溶液施加第三湿蚀刻工艺以去除图案化的牺牲层。

    Photolithography method to prevent photoresist pattern collapse
    154.
    发明授权
    Photolithography method to prevent photoresist pattern collapse 失效
    光刻法防止光刻胶图案塌陷

    公开(公告)号：US07611825B2

    公开(公告)日：2009-11-03

    申请号：US10942499

    申请日：2004-09-15

    Applicant: Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

    Inventor： Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

    IPC: G03F7/00

    CPC classification number: G03F7/091 ,  G03F7/11

    Abstract: A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.

    Abstract translation: 一种方法包括在衬底上形成BARC层，处理BARC层使其表面具有亲水性，在经处理的BARC层上形成光致抗蚀剂层，将光致抗蚀剂层暴露于预定图案，并显影光致抗蚀剂层以形成图案化的光致抗蚀剂。

    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE
    155.
    发明申请
    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE 审中-公开
    包括化学冲洗的光刻工艺

    公开(公告)号：US20080280230A1

    公开(公告)日：2008-11-13

    申请号：US11747124

    申请日：2007-05-10

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03C5/00

    CPC classification number: G03F7/40 ,  G03F7/38

    Abstract: The present disclosure provides a plurality of methods of performing a lithography process. In one embodiment, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. The exposed layer of photoresist is developed. A chemical rinse solution is applied to the developed photoresist. The chemical rinse solution includes an alcohol base chemical. The substrate is spun dry.

    Abstract translation: 本公开提供了执行光刻工艺的多种方法。 在一个实施例中，提供了包括光致抗蚀剂层的基板。 曝光该光致抗蚀剂层。 曝光的光致抗蚀剂层被开发出来。 将化学冲洗溶液施加到显影的光致抗蚀剂上。 化学冲洗液包括醇基化学品。 将基材旋转干燥。

    Photolithography process and photomask structure implemented in a photolithography process
    156.
    发明授权
    Photolithography process and photomask structure implemented in a photolithography process 有权
    在光刻工艺中实现的光刻工艺和光掩模结构

    公开(公告)号：US07435512B2

    公开(公告)日：2008-10-14

    申请号：US10894924

    申请日：2004-07-20

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F1/00

    CPC classification number: G03F7/70441 ,  G03F1/36

    Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

    Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

    Immersion Lithography System Using A Sealed Wafer Bath
    157.
    发明申请
    Immersion Lithography System Using A Sealed Wafer Bath 有权
    浸入式平版印刷系统使用密封晶片浴

    公开(公告)号：US20080106710A1

    公开(公告)日：2008-05-08

    申请号：US11670860

    申请日：2007-02-02

    Applicant: Burn Jeng Lin ,  Ching-Yu Chang

    Inventor： Burn Jeng Lin ,  Ching-Yu Chang

    IPC: G03B27/52

    CPC classification number: G03B27/52 ,  G03F7/70341

    Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

    Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没式光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，并且包括密封环，用于密封保留在晶片台上的晶片的底部边缘与 晶圆台。 该装置还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片能够完全浸入浸没流体中; 设置在所述流体箱的至少一部分上的盖，用于在所述流体箱内提供温度控制的，富含流体的环境; 以及围绕成像透镜的至少一个方向流量控制流体入口，用于将浸没流体引向保持在最靠近成像透镜的晶片台上的晶片的边缘。

    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY
    158.
    发明申请
    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY 有权
    装置和方法

    公开(公告)号：US20080002164A1

    公开(公告)日：2008-01-03

    申请号：US11697469

    申请日：2007-04-06

    Applicant: Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03B27/00 ,  B08B3/12

    CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

    Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

    Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

Patent Agency Ranking