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    Organic light-emitting diode display device and method of fabricating the same
    155.
    发明授权
    Organic light-emitting diode display device and method of fabricating the same 有权

    公开(公告)号：US10811478B2

    公开(公告)日：2020-10-20

    申请号：US16374706

    申请日：2019-04-03

    Applicant: Samsung Display Co., Ltd.

    Inventor： Dae Won Choi ,  Tae Wook Kang ,  Kyeong Su Ko ,  Sang Gab Kim ,  Tae Sung Kim ,  Joon Geol Lee ,  Hyun Min Cho

    IPC: H01L27/00 ,  H01L51/52 ,  H01L27/32 ,  H01L51/50

    Abstract: An organic light-emitting diode display device includes a pixel electrode, a pixel-defining layer, an organic emission layer, and a counter electrode. The pixel-defining layer includes an opening partially exposing the pixel electrode. The organic emission layer is disposed on the pixel electrode. The organic emission layer is disposed in the opening. The counter electrode is disposed on the organic emission layer. The counter electrode opposes the pixel electrode. The pixel-defining layer includes a first pixel-defining layer and a second pixel-defining layer. The first pixel-defining layer is disposed on the pixel electrode and includes an inorganic material. The second pixel-defining layer is disposed on the first pixel-defining layer and includes an organic material. A sidewall of the first pixel-defining layer that is closest to the opening is aligned with a sidewall of the second pixel-defining layer that is closest to the opening.

    Display device, manufacturing method thereof, and electrode forming method
    156.
    发明授权
    Display device, manufacturing method thereof, and electrode forming method 有权

    公开(公告)号：US10748943B2

    公开(公告)日：2020-08-18

    申请号：US16124356

    申请日：2018-09-07

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Hyun Min Cho ,  Shin Il Choi ,  Kyeong Su Ko ,  Sang Gab Kim ,  Joon Geol Lee

    IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/3213 ,  H01L51/50

    Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

    Transistor array panel and manufacturing method thereof
    157.
    发明授权
    Transistor array panel and manufacturing method thereof 有权

    公开(公告)号：US10741589B2

    公开(公告)日：2020-08-11

    申请号：US16215520

    申请日：2018-12-10

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yu-Gwang Jeong ,  Hyun Min Cho ,  Su Bin Bae ,  Shin Il Choi ,  Sang Gab Kim

    IPC: H01L27/12 ,  H01L21/311 ,  H01L29/417 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

    Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
    158.
    发明申请
    LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200058701A1

    公开(公告)日：2020-02-20

    申请号：US16665818

    申请日：2019-10-28

    Applicant: Samsung Display Co., Ltd.

    Inventor： Dae Hyun Kim ,  Jong Hyuk Kang ,  Joo Yeol Lee ,  Hyun Deok Im ,  Hyun Min Cho

    IPC: H01L27/15 ,  H01L33/60 ,  H01L33/38 ,  H01L27/12 ,  H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075 ,  H01L29/786

    Abstract: A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

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