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公开(公告)号：US11937472B2
公开(公告)日：2024-03-19
申请号：US17445471
申请日：2021-08-19
发明人： Sang Gab Kim , Hyun Min Cho , Tae Sung Kim , Yu-Gwang Jeong , Su Bin Bae , Jin Seock Kim , Sang Gyun Kim , Hyo Min Ko , Kil Won Cho , Hansol Lee
IPC分类号： H10K59/131 , H10K59/12 , H10K71/00 , H10K102/00
CPC分类号： H10K59/131 , H10K59/1201 , H10K71/00 , H10K2102/341
摘要： An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US11127807B2
公开(公告)日：2021-09-21
申请号：US16521394
申请日：2019-07-24
发明人： Sang Gab Kim , Hyun Min Cho , Tae Sung Kim , Yu-Gwang Jeong , Su Bin Bae , Jin Seock Kim , Sang Gyun Kim , Hyo Min Ko , Kil Won Cho , Hansol Lee
摘要： An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US11997914B2
公开(公告)日：2024-05-28
申请号：US17255406
申请日：2018-12-21
发明人： Hyun Min Cho , Shin Il Choi , Sang Gab Kim , Tae Sung Kim
IPC分类号： H01L29/786 , H10K59/121 , H10K59/124 , H10K71/16 , H10K71/20 , H10K71/00 , H10K102/00
CPC分类号： H10K71/233 , H10K59/1216 , H10K59/124 , H10K71/166 , H10K71/00 , H10K2102/00 , H10K2102/351
摘要： A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.
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公开(公告)号：US11411066B2
公开(公告)日：2022-08-09
申请号：US17030951
申请日：2020-09-24
发明人： Hyun Min Cho , Sang Gab Kim , Tae Sung Kim
摘要： A display device and a method of the display device are provided. The display device includes a lower metal layer on a substrate, a buffer layer on the lower metal layer, a first semiconductor layer on the buffer layer, a gate insulating layer on the first semiconductor layer, a first gate electrode on the gate insulating layer, an interlayer insulating layer on the first gate electrode, a via layer on the interlayer insulating layer, a pixel electrode on the via layer and electrically connected to the first semiconductor layer, a light emitting layer on the pixel electrode, a common electrode on the light emitting layer, a first contact hole penetrating the buffer layer and the interlayer insulating layer and a second contact hole penetrating the interlayer insulating layer, and a first via hole and a second via hole each penetrating the via layer.
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公开(公告)号：US11127724B2
公开(公告)日：2021-09-21
申请号：US16691495
申请日：2019-11-21
发明人： Su Bin Bae , Yu Gwang Jeong , Shin Il Choi , Joon Geol Lee , Sang Gab Kim
IPC分类号： H01L21/306 , H01L25/16 , H01L33/20 , H01L33/44 , H01L33/54 , H01L33/62 , H01L25/075 , H01L33/00 , H01L27/12
摘要： A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.
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公开(公告)号：US10861978B2
公开(公告)日：2020-12-08
申请号：US16231781
申请日：2018-12-24
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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7.发明申请公开(公告)号：US20190312147A1
公开(公告)日：2019-10-10
申请号：US16231781
申请日：2018-12-24
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L29/786 , H01L27/12 , H01L29/417 , H01L29/66
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US11320712B2
公开(公告)日：2022-05-03
申请号：US16905306
申请日：2020-06-18
发明人： Seon-Il Kim , Sung Won Cho , Sang Gab Kim , Su Bin Bae , Yu-Gwang Jeong , Dae Won Choi
IPC分类号： G02F1/1368 , H01L51/56 , G02F1/1362 , H01L51/52 , H01L27/32
摘要： A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.
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公开(公告)号：US10192992B2
公开(公告)日：2019-01-29
申请号：US15704063
申请日：2017-09-14
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US10170502B2
公开(公告)日：2019-01-01
申请号：US15380596
申请日：2016-12-15
发明人： Yu-Gwang Jeong , Hyun Min Cho , Su Bin Bae , Shin Il Choi , Sang Gab Kim
IPC分类号： H01L27/12 , H01L29/417 , H01L21/311 , G02F1/1368 , H01L27/32
摘要： A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.
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