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公开(公告)号：US10354869B2
公开(公告)日：2019-07-16
申请号：US15730376
申请日：2017-10-11
发明人： Dae Hyun Kim , Jong Hyuk Kang , Hyun Deok Im , Hyun Min Cho , Yongju Kwon , Bomi Kim , Sung-Jee Kim , Mihye Lim
摘要： A method of manufacturing a nanostructure includes: heating a mixed solution to a first temperature, the mixed solution including a solvent, a compound including indium, and an octadecylphosphonic acid; heating the mixed solution to a second temperature; injecting, after heating the mixed solution to the second temperature, a phosphine precursor into the mixed solution; and heating the mixed solution including the injected phosphine precursor to a third temperature.
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公开(公告)号：US11937472B2
公开(公告)日：2024-03-19
申请号：US17445471
申请日：2021-08-19
发明人： Sang Gab Kim , Hyun Min Cho , Tae Sung Kim , Yu-Gwang Jeong , Su Bin Bae , Jin Seock Kim , Sang Gyun Kim , Hyo Min Ko , Kil Won Cho , Hansol Lee
IPC分类号： H10K59/131 , H10K59/12 , H10K71/00 , H10K102/00
CPC分类号： H10K59/131 , H10K59/1201 , H10K71/00 , H10K2102/341
摘要： An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US11127807B2
公开(公告)日：2021-09-21
申请号：US16521394
申请日：2019-07-24
发明人： Sang Gab Kim , Hyun Min Cho , Tae Sung Kim , Yu-Gwang Jeong , Su Bin Bae , Jin Seock Kim , Sang Gyun Kim , Hyo Min Ko , Kil Won Cho , Hansol Lee
摘要： An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
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公开(公告)号：US20180102249A1
公开(公告)日：2018-04-12
申请号：US15730376
申请日：2017-10-11
发明人： Dae Hyun Kim , Jong Hyuk Kang , Hyun Deok Im , Hyun Min Cho , Yongju Kwon , Bomi Kim , Sung-Jee Kim , Mihye Lim
IPC分类号： H01L21/02
CPC分类号： H01L21/02601 , B82Y30/00 , B82Y40/00 , H01L21/02392 , H01L21/02543 , H01L21/02603 , H01L21/02628 , H01L21/02636 , H01L21/02667
摘要： A method of manufacturing a nanostructure includes: heating a mixed solution to a first temperature, the mixed solution including a solvent, a compound including indium, and an octadecylphosphonic acid; heating the mixed solution to a second temperature; injecting, after heating the mixed solution to the second temperature, a phosphine precursor into the mixed solution; and heating the mixed solution including the injected phosphine precursor to a third temperature.
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公开(公告)号：US12074256B2
公开(公告)日：2024-08-27
申请号：US17284345
申请日：2019-04-10
发明人： Hyun Deok Im , Jong Hyuk Kang , Dae Hyun Kim , Hyun Min Cho , Dong Hyun Kim
IPC分类号： H01L33/38 , H01L25/075 , H01L25/16 , H01L33/62
CPC分类号： H01L33/38 , H01L25/0753 , H01L25/167 , H01L33/62 , H01L2933/0066
摘要： A light emitting device may include at least one first electrode and at least one second electrode disposed on different layers on a substrate; a first insulating layer disposed between the first electrode and the second electrode; and at least one light emitting diode electrically connected between the at least one first electrode and the second electrode.
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公开(公告)号：US11997914B2
公开(公告)日：2024-05-28
申请号：US17255406
申请日：2018-12-21
发明人： Hyun Min Cho , Shin Il Choi , Sang Gab Kim , Tae Sung Kim
IPC分类号： H01L29/786 , H10K59/121 , H10K59/124 , H10K71/16 , H10K71/20 , H10K71/00 , H10K102/00
CPC分类号： H10K71/233 , H10K59/1216 , H10K59/124 , H10K71/166 , H10K71/00 , H10K2102/00 , H10K2102/351
摘要： A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.
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公开(公告)号：US11935986B2
公开(公告)日：2024-03-19
申请号：US17298445
申请日：2019-05-30
发明人： Dong Uk Kim , Jin Oh Kwag , Keun Kyu Song , Sung-Chan Jo , Hyun Min Cho
IPC分类号： H01L33/38 , H01L25/075 , H01L33/00 , H01L33/24 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L33/005 , H01L33/24 , H01L33/62 , H01L2933/0016 , H01L2933/0066
摘要： A display device may include: a substrate including a display area and a non-display area; and pixels in the display area, and each including sub-pixels. Each sub-pixel may include a pixel circuit layer, and a display element layer including at least one light emitting element. The display element layer may include: a first electrode on the pixel circuit layer; a second electrode on the first electrode and electrically insulated from the first electrode; the light emitting element including a first end portion coupled to the first electrode and a second end portion coupled to the second electrode, and between the first electrode and the second electrode; an intermediate layer enclosing at least one area of the light emitting element, and on the first electrode; a connection line electrically connected to the second electrode. The second electrode may be on the intermediate layer.
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公开(公告)号：US11842681B2
公开(公告)日：2023-12-12
申请号：US17384556
申请日：2021-07-23
发明人： Hyun Min Cho , Sung Chul Kim , Dae Hyun Kim , Hye Yong Chu , Jong Hyuk Kang , Keun Kyu Song , Joo Yeol Lee , Bek Hyun Lim , Hyun Deok Im
IPC分类号： G09G3/3233 , H01L33/20 , H01L33/00 , H01L33/44 , H01L33/52 , H01L33/38 , H01L25/075 , H01L25/16 , H05B45/40 , H01L33/62
CPC分类号： G09G3/3233 , H01L25/0753 , H01L25/167 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/52 , H05B45/40 , H01L33/62
摘要： A display device includes: a substrate; a display element layer on one surface of the substrate and including at least one light emitting element emitting light; and a pixel circuit portion on the display element layer and including at least one transistor electrically connected to the light emitting element, wherein the display element layer includes: a first electrode on the substrate and electrically connected to one end of the light emitting element; a second electrode on the substrate and electrically connected to the other end of the light emitting element; and an insulation layer on the substrate including the second electrode, and having a first opening exposing a portion of the second electrode, and wherein the second electrode is electrically connected to the transistor through the first opening.
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公开(公告)号：US11810905B2
公开(公告)日：2023-11-07
申请号：US17250633
申请日：2019-01-03
发明人： Hyun Min Cho , Dae Hyun Kim , Dong Uk Kim , Jung Hong Min , Seung A Lee , Hyung Rae Cha
IPC分类号： H01L25/075 , H01L27/12 , H01L33/00 , H01L33/22 , H01L33/62
CPC分类号： H01L25/0753 , H01L27/1214 , H01L33/0093 , H01L33/22 , H01L33/62 , H01L2933/0066
摘要： Provided are a light emitting device, a method for manufacturing same, and a display device including the light emitting device. The method for manufacturing the light emitting device comprises the steps of: preparing a lower substrate including a substrate and a buffer semiconductor layer formed on the substrate, forming an element rod by forming a separating layer disposed on the lower substrate, forming a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, and etching the first conductivity type semiconductor layer, the active material layer, the second conductivity type semiconductor layer, and the separating layer in a direction perpendicular to the lower substrate, forming a first insulating layer surrounding an outer circumferential surface of the element rod, forming a second insulating layer surrounding an outer circumferential surface of the first insulating layer and separating the element rod from the lower substrate to form a light emitting element.
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10.发明授权公开(公告)号：US11787190B2
公开(公告)日：2023-10-17
申请号：US17418048
申请日：2019-11-06
发明人： Han Su Kim , Eun A Yang , Jong Hyuk Kang , Hyun Min Cho
CPC分类号： B41J2/17503 , B41J2/125 , B41J2/17566 , B41J2/195 , G02F1/1303 , H10K71/135
摘要： An inkjet printing device includes an ink reservoir that stores ink containing particles, an inkjet head part that receives the ink from the ink reservoir and ejects the ink onto a target substrate and a driver for rotating the ink reservoir.
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