公开(公告)号：US09355734B2

公开(公告)日：2016-05-31

申请号：US14196839

申请日：2014-03-04

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Hung Quoc Nguyen ,  Anh Ly ,  Thuan Vu

IPC: G11C11/34 ,  G11C16/28 ,  G11C11/16 ,  G11C13/00 ,  G11C7/06

CPC classification number: G11C16/28 ,  G11C7/065 ,  G11C11/1673 ,  G11C13/004 ,  G11C16/0425 ,  G11C2216/04

Abstract: Improved sensing circuits for use in low power nanometer flash memory devices are disclosed.

Abstract translation: 公开了用于低功率纳米闪速存储器件的改进的感测电路。

公开(公告)号：US20160141034A1

公开(公告)日：2016-05-19

申请号：US15003811

申请日：2016-01-22

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Hung Quoc Nguyen ,  Anh Ly ,  Thuan Vu

IPC: G11C16/08

CPC classification number: G11C16/08 ,  G06F17/5081 ,  G11C7/062 ,  G11C8/10 ,  G11C11/1673 ,  G11C13/004 ,  G11C16/26 ,  G11C16/28

Abstract: Improved PMOS and NMOS transistor designs for sensing circuitry use in advanced nanometer flash memory devices are disclosed.

Abstract translation: 公开了用于高级纳米闪存器件中的感测电路的改进的PMOS和NMOS晶体管设计。

公开(公告)号：US20150310922A1

公开(公告)日：2015-10-29

申请号：US14791213

申请日：2015-07-02

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Anh Ly ,  Thuan Vu ,  Hung Quoc Nguyen

IPC: G11C16/12 ,  G11C16/24

CPC classification number: G11C16/12 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/30

Abstract: An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.

Abstract translation: 公开了用于编程高级纳米闪存单元的改进的方法和装置。

公开(公告)号：US20150003166A1

公开(公告)日：2015-01-01

申请号：US14449926

申请日：2014-08-01

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Hung Quoc Nguyen ,  Anh Ly ,  Thuan Vu

IPC: G11C16/10 ,  G11C16/26 ,  H01L27/115

CPC classification number: G11C16/10 ,  G11C7/00 ,  G11C7/22 ,  G11C16/26 ,  G11C16/28 ,  G11C2207/2263 ,  G11C2211/5647 ,  H01L27/11517

Abstract: A non-volatile memory device has a charge pump for providing a programming current and an array of non-volatile memory cells. Each memory cell of the array is programmed by the programming current from the charge pump. The array of non-volatile memory cells is partitioned into a plurality of units, with each unit comprising a plurality of memory cells. An indicator memory cell is associated with each unit of non-volatile memory cells. A programming circuit programs the memory cells of each unit using the programming current, when fifty percent or less of the memory cells of each unit is to be programmed, and programs the inverse of the memory cells of each unit and the indicator memory cell associated with each unit, using the programming current, when more than fifty percent of the memory cells of each unit is to be programmed.

Abstract translation: 非易失性存储器件具有用于提供编程电流和非易失性存储器单元阵列的电荷泵。 阵列的每个存储单元都由来自电荷泵的编程电流编程。 非易失性存储器单元的阵列被分割成多个单元，每个单元包括多个存储器单元。 指示器存储单元与每单位的非易失性存储单元相关联。 编程电路使用编程电流来对每个单元的存储器单元进行编程，当每个单元的存储单元的百分之五十或更少被编程时，编程每个单元的存储器单元的反相和与 每个单元使用编程电流时，每个单元的存储单元的百分之五十以上将被编程。

公开(公告)号：US20140269049A1

公开(公告)日：2014-09-18

申请号：US13958410

申请日：2013-08-02

Applicant: Silicon Storage Technology, Inc.

Inventor： Hieu Van Tran ,  Anh Ly ,  Thuan Vu ,  Hung Quoc Nguyen

IPC: G11C16/06 ,  H02M3/156

CPC classification number: G11C16/06 ,  G11C5/145 ,  G11C16/12 ,  G11C16/30 ,  H02M3/07 ,  H02M3/073

Abstract: A hybrid charge pump and control circuit for use in a memory device is disclosed.

Abstract translation: 公开了一种用于存储器件的混合电荷泵和控制电路。