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公开(公告)号：US20070196969A1
公开(公告)日：2007-08-23
申请号：US11788322
申请日：2007-04-18
IPC分类号： H01L21/786
CPC分类号： H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78678
摘要： The sizes of crystal masses are made to be a uniform in a crystalline silicon film obtained by a thermal crystallization method in which a metal element is used. An amorphous silicon film to be crystallized is doped with a metal element that accelerates crystallization, and then irradiated with laser light (with an energy which is not large enough to melt the film and which is large enough to allow the metal element to diffuse in the solid silicon film) from the back side of a light-transmissive substrate. Thereafter, heat treatment is performed to obtain a crystalline silicon film. Thus crystal masses in the crystalline silicon film can have a uniform size and the problem of fluctuation between TFTs can be solved.
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公开(公告)号：US20070034870A1
公开(公告)日：2007-02-15
申请号：US11582471
申请日：2006-10-17
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L31/00
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.
摘要翻译： 在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。 在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力 被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。
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公开(公告)号：US07176490B2
公开(公告)日：2007-02-13
申请号：US11087652
申请日：2005-03-24
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/104
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译： 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。
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公开(公告)号：US20070020512A1
公开(公告)日：2007-01-25
申请号：US11490279
申请日：2006-07-20
申请人： Nobuyuki Wakuda , Hiroshi Shibata
发明人： Nobuyuki Wakuda , Hiroshi Shibata
IPC分类号： H01M2/10
摘要： A battery container case comprises an ensemble storage section 21 having made and arranged therein plural holder holes 231 that hold individually respectively cylindrical batteries 10 upright in such a way that they are half fitted into the holder holes; an open/close lid 22 that covers the batteries in the ensemble storage section from above; and a restraint member 31 for each holder hole that hinders a respective one of the batteries from being taken out of the holder hole. Each restraint member 31 is fixed to the ensemble storage section in such a disposable manner that it is removable irreversibly.
摘要翻译： 电池容器壳体包括一个制成并布置有多个保持孔231的整体存储部分21，该保持孔231分别将圆柱形电池10竖直地固定，使得它们半装入保持孔; 打开/关闭盖22，其从上方覆盖整体存储部中的电池; 以及用于每个保持器孔的约束构件31，其阻止相应的一个电池从保持器孔中取出。 每个约束构件31以一种一次性的方式固定到集合存储部分，使得其不可逆地移除。
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公开(公告)号：US20050281918A1
公开(公告)日：2005-12-22
申请号：US10523805
申请日：2003-08-08
申请人： Hiroshi Shibata , Mie Hata , Hiroaki Sasaki , Hiroshi Kono
发明人： Hiroshi Shibata , Mie Hata , Hiroaki Sasaki , Hiroshi Kono
CPC分类号： A23L33/16 , C02F1/469 , C02F2103/08 , Y02A20/134
摘要： A seawater mineral component-containing composition is produced which contains mineral components having a good effect on health, such as magnesium and calcium, has a decreased content of sodium, and thus can be used widely for foods. When processed, the seawater mineral component-containing composition provides foods and beverages useful for preventing cardiovascular diseases and lifestyle-related diseases. The seawater mineral component-containing composition is obtained by subjecting seawater to electrodialysis, and has a sodium concentration of 6 mg/L or less when adjusted to form an aqueous solution having a hardness of 100 (EDTA method).
摘要翻译： 制备含有对健康有良好效果的矿物质组分如镁和钙的具有降低的钠含量的海水含矿物组分的组合物，因此可广泛用于食品。 当加工时，含海水矿物成分的组合物提供用于预防心血管疾病和与生活方式有关的疾病的食物和饮料。 含海水矿物成分组合物是通过对海水进行电渗析而得到的，调整浓度为6mg / L以下，形成硬度为100（EDTA法）的水溶液时。
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公开(公告)号：US20050258421A1
公开(公告)日：2005-11-24
申请号：US10406591
申请日：2003-04-04
申请人： Hiroshi Shibata , Osamu Nakamura , Shunichi Naka , Tohru Ueda
发明人： Hiroshi Shibata , Osamu Nakamura , Shunichi Naka , Tohru Ueda
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/322 , H01L21/336 , H01L21/77 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1214 , H01L27/1274 , H01L29/04 , H01L29/66757
摘要： The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.
摘要翻译： 问题在于提供减少漏光电流的技术，以获得良好的显示。 将选自氩，锗，硅，氦，氖，氪和氙的一种或多种元素注入晶体半导体层中，以通过均匀且适当的密度在半导体膜中分配由于上述元素注入引起的晶体缺陷 ，使载流子的复合中心，从而抑制光敏灵敏度而不破坏包括在晶体半导体层中的高度的载流子移动。
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公开(公告)号：US06906347B2
公开(公告)日：2005-06-14
申请号：US09874670
申请日：2001-06-05
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/04 , H01L29/423 , H01L29/786 , G02F1/136
CPC分类号： H01L29/42384 , G02F1/13454 , H01L27/1237 , H01L27/1255 , H01L27/1277 , H01L29/78645
摘要： A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
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158.发明授权公开(公告)号：US06897477B2
公开(公告)日：2005-05-24
申请号：US10157046
申请日：2002-05-30
申请人： Hiroshi Shibata , Shinji Maekawa
发明人： Hiroshi Shibata , Shinji Maekawa
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786 , H01L29/00
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F2202/105 , H01L27/1255 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L29/78696
摘要： A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the entire semiconductor layer of a TFT which is in an on state is reduced to increase an on current. In addition, a carrier life time due to photoexcitation produced in the high concentration impurity region can be shortened to reduce light sensitivity.
摘要翻译： 使用多栅极结构，并且在沟道长度方向上被两沟道形成区域夹着的高浓度杂质区域的宽度（d 1）设定为短于沟道长度方向上的低浓度杂质区域的宽度（d 2） 通道长度方向。 因此，导通状态的TFT的整个半导体层的电阻减小以增加导通电流。 此外，可以缩短由于在高浓度杂质区域产生的光激发而导致的载流子寿命，以降低光灵敏度。
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公开(公告)号：US20050101066A1
公开(公告)日：2005-05-12
申请号：US10996228
申请日：2004-11-23
申请人： Tatsuya Arao , Yoshifumi Tanada , Hiroshi Shibata
发明人： Tatsuya Arao , Yoshifumi Tanada , Hiroshi Shibata
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786 , H01L21/00
CPC分类号： G02F1/136213 , G02F1/136209 , G02F2201/40 , H01L27/1255 , H01L29/78621 , H01L29/78633 , H01L29/78645
摘要： It is a problem to realize, by a reduced number of processes than that of the conventional, a reliable active-matrix liquid crystal display device having a high opening ratio for high-definition display. The present invention is characterized by: forming a gate electrode and source and drain interconnections in the same process, forming a first insulating film covering the interconnections, forming an upper light-shielding film on the first insulating film, forming a second insulating film on the upper light-shielding film, partially etching the first and second insulating films to form a contact hole reaching the drain interconnection, and forming a pixel electrode on the second insulating film to connect to the drain interconnection. Meanwhile, a holding capacitance is formed by the upper light-shielding film, the second insulating film and the pixel electrode.
摘要翻译： 通过减少数量的处理，与用于高清晰度显示的高开放率的可靠的有源矩阵液晶显示装置相比，实现了一个问题。 本发明的特征在于：在相同的工艺中形成栅电极和源漏互连，形成覆盖互连的第一绝缘膜，在第一绝缘膜上形成上光屏蔽膜，在第一绝缘膜上形成第二绝缘膜 上部遮光膜，部分地蚀刻第一和第二绝缘膜以形成到达漏极互连的接触孔，并且在第二绝缘膜上形成像素电极以连接到漏极互连。 同时，由上部遮光膜，第二绝缘膜和像素电极形成保持电容。
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公开(公告)号：US06890784B2
公开(公告)日：2005-05-10
申请号：US10453034
申请日：2003-06-03
IPC分类号： H01L29/786 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/32 , H01L29/04 , H01L21/00
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/1368 , G02F2001/136245 , H01L27/1237 , H01L27/1255 , H01L27/3244 , H01L29/78633 , H01L29/78645
摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
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