公开(公告)号：US20120001289A1

公开(公告)日：2012-01-05

申请号：US13173053

申请日：2011-06-30

Applicant: Jung-Chak AHN ,  Kyung-Ho Lee

Inventor： Jung-Chak AHN ,  Kyung-Ho Lee

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/14621 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses.

Abstract translation: 图像传感器的单位像素阵列包括具有多个光电二极管的半导体衬底，在半导体衬底的正面上的层间绝缘层和在半导体衬底的背面上的多个微透镜。 图像传感器的单位像素阵列还包括在每个微透镜和半导体衬底的背面之间的波长调节膜部分，使得多个波长调节膜部分对应于多个微透镜。

公开(公告)号：US20110316002A1

公开(公告)日：2011-12-29

申请号：US13171946

申请日：2011-06-29

Applicant: Jung-chak AHN ,  Eun-sub SHIM ,  Bum-suk KIM ,  Kyung-ho LEE

Inventor： Jung-chak AHN ,  Eun-sub SHIM ,  Bum-suk KIM ,  Kyung-ho LEE

IPC: H01L29/02 ,  H01L31/0232

CPC classification number: H01L27/1462 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode.

Abstract translation: 包括布线层的互补金属氧化物半导体（CMOS）图像传感器，堆叠有布线层的光电二极管，堆叠在光电二极管上的微透镜，堆叠在光电二极管上的抗反射层。 可以在光电二极管和抗反射层之间设置抗吸收层。 光电二极管可以包括第一部分和第二部分。 光可以通过微透镜聚焦在第一部分上，并且第二部分可以至少部分地围绕第一部分。 第一部分的材料可以具有比第二部分的材料的折射率高的折射率。 抗吸收层可以包括具有比包含在光电二极管中的半导体的能带隙大的能带隙的化合物半导体。

公开(公告)号：US08021912B2

公开(公告)日：2011-09-20

申请号：US12320543

申请日：2009-01-29

Applicant: Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

Inventor： Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

IPC: H01L21/00

CPC classification number: H01L27/14643 ,  H01L27/14623 ,  H01L27/14632

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract translation: 提供一种制造图像传感器的方法。 在该方法中，可以在半导体衬底内形成光电转换单元，其中半导体衬底包括有源像素区域和光学黑色区域。 可以在有源像素区域和光学黑色区域上形成退火层并进行蚀刻，使得退火层覆盖光学黑色区域的至少一部分。 可以在退火层上形成布线图案。 可以在布线图案上形成遮光图案，以覆盖光学黑色区域的整个光电转换单元，从而阻止光入射到光学黑色区域。

公开(公告)号：US20110150359A1

公开(公告)日：2011-06-23

申请号：US12761444

申请日：2010-04-16

Applicant: Byoung Won HWANG ,  Kyung Ho LEE ,  Kyoung Soo KWON ,  Youn Joong LEE

Inventor： Byoung Won HWANG ,  Kyung Ho LEE ,  Kyoung Soo KWON ,  Youn Joong LEE

IPC: G06K9/40

CPC classification number: G09G3/3225 ,  G09G3/2018 ,  G09G2300/0842 ,  G09G2320/0626 ,  G09G2330/021 ,  G09G2330/045 ,  G09G2340/16 ,  G09G2360/16

Abstract: A current limitation method of a display device includes: calculating a brightness average in each frame of an inputted image; calculating a brightness difference between successive frames of the image by using the calculated brightness average, and calculating a cumulative average brightness value by cumulating the brightness average with respect to the frames included in a frame length which is varied depending on the brightness difference; converting the cumulative average brightness value into a preset brightness adjustment value; and adjusting the brightness of the inputted image according to the brightness adjustment value.

Abstract translation: 显示装置的电流限制方法包括：计算输入图像的每帧中的亮度平均值; 通过使用计算的亮度平均来计算图像的连续帧之间的亮度差，并且通过累积相对于根据亮度差而变化的帧长度所包括的帧的亮度平均来计算累积平均亮度值; 将累积平均亮度值转换为预设亮度调整值; 以及根据亮度调整值调整输入图像的亮度。

公开(公告)号：US20110115020A1

公开(公告)日：2011-05-19

申请号：US12835523

申请日：2010-07-13

Applicant: Jae-Han CHA ,  Kyung-Ho LEE ,  Sun-Goo KIM ,  Hyung-Suk CHOI ,  Ju-Ho KIM ,  Jin-Young Chae ,  In-Taek OH

Inventor： Jae-Han CHA ,  Kyung-Ho LEE ,  Sun-Goo KIM ,  Hyung-Suk CHOI ,  Ju-Ho KIM ,  Jin-Young Chae ,  In-Taek OH

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract translation: 半导体器件包括在衬底上方构造的第二导电类型深阱。 深阱包括离子注入区域和扩散区域。 在扩散区域中形成第一导电型第一阱。 栅电极延伸在离子注入区域和扩散区域的部分上，并且部分地与第一阱重叠。 离子注入区域具有均匀的杂质浓度，而扩散区域的杂质浓度从在离子注入区域和扩散区域之间的边界界面处的最高浓度变为在扩散区域的部分处的最低浓度 距离边界界面最远。

公开(公告)号：US07915106B2

公开(公告)日：2011-03-29

申请号：US12270016

申请日：2008-11-13

Applicant: Jae Yeob Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

Inventor： Jae Yeob Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

IPC: H01L21/338 ,  H01L21/44 ,  H01L21/28

CPC classification number: H01L21/0331 ,  H01L21/28587

Abstract: A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

Abstract translation: 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

公开(公告)号：US20110018364A1

公开(公告)日：2011-01-27

申请号：US12559461

申请日：2009-09-14

Applicant: Yong Jin KIM ,  Jun Kun CHOI ,  Jae Woo JUN ,  Ki Suk WOO ,  Kwang Hyung LEE ,  Je Hyun BANG ,  Seok Jun PARK ,  Kyung Ho LEE ,  Hwa Young OH

Inventor： Yong Jin KIM ,  Jun Kun CHOI ,  Jae Woo JUN ,  Ki Suk WOO ,  Kwang Hyung LEE ,  Je Hyun BANG ,  Seok Jun PARK ,  Kyung Ho LEE ,  Hwa Young OH

IPC: H02K33/02 ,  H02K33/00

CPC classification number: H02K33/18

Abstract: The present invention provides a horizontal linear vibrator which can reduce the thickness but increase the strength of vibrations while at the same time guaranteeing a sufficiently long lifetime and satisfactory responsivity. The horizontal linear vibrator includes a casing, a bracket, a vibration unit and springs. The casing defines an internal space therein. A first magnet is attached to an upper plate of the casing. The bracket is coupled to the lower end of the casing. The second magnet is attached to the bracket such that different poles of the first and second magnets face each other. The vibration unit has a weight, and a cylindrical coil which is provided in or under the weight. The springs are coupled to the sidewall plates of the casing or the bracket. The springs elastically support the vibration unit to allow the vibration unit to vibrate in the horizontal direction.

Abstract translation: 本发明提供一种水平线性振动器，其可以减小厚度，但是增加振动的强度，同时保证足够长的使用寿命和令人满意的响应性。 水平线性振动器包括壳体，支架，振动单元和弹簧。 壳体在其中限定内部空间。 第一磁体附接到壳体的上板。 支架联接到壳体的下端。 第二磁体附接到支架，使得第一和第二磁体的不同的磁极彼此面对。 振动单元具有重量，并且设置在重物中或其下方的圆柱形线圈。 弹簧联接到壳体或支架的侧壁板。 弹簧弹性地支撑振动单元以允许振动单元在水平方向上振动。

公开(公告)号：US20100327673A1

公开(公告)日：2010-12-30

申请号：US12786919

申请日：2010-05-25

Applicant: Jae-Woo Jun ,  Jun-Kun Choi ,  Hwa-Young Oh ,  Yong-Jin Kim ,  Kyung-Ho Lee ,  Seok-Jun Park ,  Kwang-Hyung Lee ,  Je-Hyun Bang

Inventor： Jae-Woo Jun ,  Jun-Kun Choi ,  Hwa-Young Oh ,  Yong-Jin Kim ,  Kyung-Ho Lee ,  Seok-Jun Park ,  Kwang-Hyung Lee ,  Je-Hyun Bang

IPC: H02K33/00

CPC classification number: H02K33/16

Abstract: A linear vibrator is disclosed. In accordance with an embodiment of the present invention, the linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively with respect to the coil unit, and a leaf spring, which is interposed between the magnet and the base and includes a plurality of plate-shaped members having center portions thereof being separated from one another and both respective ends thereof being coupled to one another. Thus, the linear vibrator can increase the range of displacement in the leaf spring and increase the magnitude of vibration in the linear vibrator.

Abstract translation: 公开了线性振动器。 根据本发明的实施例，线性振动器包括底座，联接到基座的线圈单元，耦合到线圈单元的磁体，使得磁体可相对于线圈相对移动 单元和片簧，其插入在所述磁体和所述基座之间，并且包括多个板状构件，所述多个板状构件的中心部分彼此分离并且其两个端部彼此连接。 因此，线性振动器可以增加板簧中的位移范围并增加线性振动器中振动的大小。

公开(公告)号：USD624905S1

公开(公告)日：2010-10-05

申请号：US29342470

申请日：2009-08-25

Applicant: Kyung Ho Lee

Designer： Kyung Ho Lee

公开(公告)号：US07777936B2

公开(公告)日：2010-08-17

申请号：US12166436

申请日：2008-07-02

Applicant: Jae-Hyuk Chang ,  Nam-Seok Roh ,  Seong-Sik Shin ,  Ju-Han Bae ,  Kyung-Ho Lee ,  Jun-Bo Yoon

Inventor： Jae-Hyuk Chang ,  Nam-Seok Roh ,  Seong-Sik Shin ,  Ju-Han Bae ,  Kyung-Ho Lee ,  Jun-Bo Yoon

IPC: G02B26/00 ,  G02F1/15

CPC classification number: G02B26/02 ,  G02B26/04

Abstract: The present invention relates to a display device including a substrate having a display area, a first electrode disposed on the substrate to receive a first voltage, a second electrode disposed on the substrate to receive a second voltage having an opposite polarity to that of the first voltage, an insulating layer disposed on the first electrode and the second electrode, and an isolated member disposed on the insulating layer and electrically isolated, wherein an induction charge is generated in the isolated member by application of the first voltage and the second voltage, and wherein light transmittance is controlled according to the application of the first and second voltages.

Abstract translation: 本发明涉及一种显示装置，包括具有显示区域的基板，设置在基板上以接收第一电压的第一电极，设置在基板上的第二电极，以接收具有与第一电压相反的极性的第二电压 电压，设置在所述第一电极和所述第二电极上的绝缘层，以及隔离构件，其设置在所述绝缘层上并电隔离，其中通过施加所述第一电压和所述第二电压在所述隔离构件中产生感应电荷，以及 其中根据第一和第二电压的应用控制透光率。