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    SYSTEM AND METHOD OF VAPOR DEPOSITION
    162.
    发明申请
    SYSTEM AND METHOD OF VAPOR DEPOSITION 有权
    蒸气沉积系统与方法

    公开(公告)号：US20100099267A1

    公开(公告)日：2010-04-22

    申请号：US12254658

    申请日：2008-10-20

    Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    IPC: H01L21/31 ,  C23C16/00

    CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

    Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

    Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

    METHOD FOR FORMING A SACRIFICIAL SANDWICH STRUCTURE
    163.
    发明申请
    METHOD FOR FORMING A SACRIFICIAL SANDWICH STRUCTURE 有权
    形成三面体结构的方法

    公开(公告)号：US20100068874A1

    公开(公告)日：2010-03-18

    申请号：US12560164

    申请日：2009-09-15

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/28 ,  H01L21/306

    CPC classification number: H01L21/28123 ,  H01L21/0271 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32132 ,  H01L21/32139 ,  H01L29/517

    Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基底上形成第一材料层; 在所述第一材料层上形成第二材料层; 在所述第二材料层上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 将使用第一蚀刻溶液的第一湿蚀刻工艺应用于衬底，以使用图案化的抗蚀剂层作为掩模对牺牲层进行图案化，得到图案化的牺牲层; 将氨氢氧化物 - 过氧化氢 - 水混合物（APM）溶液施加到所述基底上以对所述第二材料层进行图案化，得到图案化的第二材料层; 使用第二蚀刻溶液将第二湿蚀刻工艺应用于所述衬底以对所述第一材料层进行图案化; 以及使用第三蚀刻溶液施加第三湿蚀刻工艺以去除图案化的牺牲层。

    Photolithography method to prevent photoresist pattern collapse
    164.
    发明授权
    Photolithography method to prevent photoresist pattern collapse 失效
    光刻法防止光刻胶图案塌陷

    公开(公告)号：US07611825B2

    公开(公告)日：2009-11-03

    申请号：US10942499

    申请日：2004-09-15

    Applicant: Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

    Inventor： Ching-Yu Chang ,  Kuei Shun Chen ,  Bang-Ching Ho

    IPC: G03F7/00

    CPC classification number: G03F7/091 ,  G03F7/11

    Abstract: A method comprises forming a BARC layer on a substrate, treating the BARC layer to make its surface hydrophilic, forming a photoresist layer on the treated BARC layer, exposing the photoresist layer to a predetermined pattern, and developing the photoresist layer to form patterned photoresist.

    Abstract translation: 一种方法包括在衬底上形成BARC层，处理BARC层使其表面具有亲水性，在经处理的BARC层上形成光致抗蚀剂层，将光致抗蚀剂层暴露于预定图案，并显影光致抗蚀剂层以形成图案化的光致抗蚀剂。

    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE
    165.
    发明申请
    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE 审中-公开
    包括化学冲洗的光刻工艺

    公开(公告)号：US20080280230A1

    公开(公告)日：2008-11-13

    申请号：US11747124

    申请日：2007-05-10

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03C5/00

    CPC classification number: G03F7/40 ,  G03F7/38

    Abstract: The present disclosure provides a plurality of methods of performing a lithography process. In one embodiment, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. The exposed layer of photoresist is developed. A chemical rinse solution is applied to the developed photoresist. The chemical rinse solution includes an alcohol base chemical. The substrate is spun dry.

    Abstract translation: 本公开提供了执行光刻工艺的多种方法。 在一个实施例中，提供了包括光致抗蚀剂层的基板。 曝光该光致抗蚀剂层。 曝光的光致抗蚀剂层被开发出来。 将化学冲洗溶液施加到显影的光致抗蚀剂上。 化学冲洗液包括醇基化学品。 将基材旋转干燥。

    Photolithography process and photomask structure implemented in a photolithography process
    166.
    发明授权
    Photolithography process and photomask structure implemented in a photolithography process 有权
    在光刻工艺中实现的光刻工艺和光掩模结构

    公开(公告)号：US07435512B2

    公开(公告)日：2008-10-14

    申请号：US10894924

    申请日：2004-07-20

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F1/00

    CPC classification number: G03F7/70441 ,  G03F1/36

    Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

    Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

    Rework process of patterned photo-resist layer
    169.
    发明授权
    Rework process of patterned photo-resist layer 有权
    图案光刻胶层的返工工艺

    公开(公告)号：US07125741B2

    公开(公告)日：2006-10-24

    申请号：US10720735

    申请日：2003-11-24

    Applicant: Yu-Lin Yen ,  Ching-Yu Chang

    Inventor： Yu-Lin Yen ,  Ching-Yu Chang

    IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/44

    CPC classification number: H01L21/0276 ,  H01L21/0332 ,  Y10S438/952

    Abstract: A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.

    Abstract translation: 提供了图案化光刻胶层的返工工艺。 首先，在衬底上依次形成有第一DARC，第一底漆和第一图案化的光致抗蚀剂层。 接下来，从第一DARC去除第一图案化的光致抗蚀剂层和第一底漆。 之后，在第一个DARC上形成第二个DARC; 在第二个DARC上形成第二个引物。 最后，在第二底漆上形成第二图案的光致抗蚀剂层。

    Method of reducing critical dimension bias of dense pattern and isolation pattern
    170.
    发明授权
    Method of reducing critical dimension bias of dense pattern and isolation pattern 有权
    降低密集图案和隔离图案的关键尺寸偏差的方法

    公开(公告)号：US07097945B2

    公开(公告)日：2006-08-29

    申请号：US10249559

    申请日：2003-04-18

    Applicant: Ching-Yu Chang ,  Hsin-huei Chen ,  Meng-Wei Chen

    Inventor： Ching-Yu Chang ,  Hsin-huei Chen ,  Meng-Wei Chen

    IPC: G03F1/00 ,  H01L21/302

    CPC classification number: G03F1/70

    Abstract: A method of reducing a critical dimension (“CD”) bias between a dense pattern and an isolation pattern is disclosed. The method includes a first step of providing a mask having a dense pattern, an isolation pattern and the other area of the mask is transparent, in which mask the dense pattern has a first opaque pattern and the isolation pattern has a second opaque pattern. The second step of the method is forming a virtual pattern around the isolation pattern, in which a distance between the virtual pattern and the isolation pattern is y, and the virtual pattern has a pattern line width x. By forming the virtual pattern around the isolation pattern, the flare effect of the isolation pattern is close to that of the dense pattern, thus the CD bias between a dense pattern, and an isolation pattern is reduced, and the process window does not shrink.

    Abstract translation: 公开了一种降低致密图案和隔离图案之间的临界尺寸（“CD”）偏压的方法。 该方法包括提供具有致密图案的掩模，隔离图案和掩模的另一区域是透明的第一步骤，其中密集图案具有第一不透明图案，并且隔离图案具有第二不透明图案。 该方法的第二步是在隔离图案周围形成虚拟图案，其中虚拟图案和隔离图案之间的距离为y，虚拟图案具有图案线宽度x。 通过在隔离图案周围形成虚拟图案，隔离图案的耀斑效应接近密集图案的闪光效果，因此减小密集图案和隔离图案之间的CD偏差，并且处理窗口不缩小。

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