Stiffener shield for device integration

    公开(公告)号:US11205622B2

    公开(公告)日:2021-12-21

    申请号:US16423561

    申请日:2019-05-28

    Abstract: To overcome the problem of devices in a multi-chip package (MCP) interfering with one another, such as through electromagnetic interference (EMI) and/or radio-frequency interference (RFI), the chip package can include an electrically conductive stiffener that at least partially electrically shields the devices from one another. At least some of the devices can be positioned in respective recesses in the stiffener. In some examples, when the devices are positioned in the recesses, at least one device does not extend beyond a plane defined by a first side of the stiffener. Such shielding can help reduce interference between the devices. Because device-to-device electrical interference can be reduced, devices on the package can be positioned closer to one another, thereby reducing a size of the package. The devices can electrically connect to a substrate via electrical connections that extend through the stiffener.

    Substrate with gradiated dielectric for reducing impedance mismatch

    公开(公告)号:US11164827B2

    公开(公告)日:2021-11-02

    申请号:US16473962

    申请日:2017-12-19

    Abstract: An electronic circuit including a substrate having a first dielectric characteristic. The substrate can include a first side and a second side. An intermediary material can be disposed within the substrate. For instance, the intermediary material can be located between the first side and the second side. The intermediary material can include a second dielectric characteristic, where the second dielectric characteristic is different than the first dielectric characteristic. A first conductive layer can be disposed on the first side, and a second conductive layer can be disposed on the second side. A conductive path can be electrically coupled between the first conductive layer and the second conductive layer. The conductive path can be in contact with at least a portion of the intermediary material.

    MICRO THROUGH-SILICON VIA FOR TRANSISTOR DENSITY SCALING

    公开(公告)号:US20210320051A1

    公开(公告)日:2021-10-14

    申请号:US17155757

    申请日:2021-01-22

    Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

    INTERPOSER FOR HYBRID INTERCONNECT GEOMETRY

    公开(公告)号:US20210183755A1

    公开(公告)日:2021-06-17

    申请号:US17023042

    申请日:2020-09-16

    Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a substrate, a semiconductor die thereon, electrically coupled to the substrate, and an interposer adapted to connect the substrate to a circuit board. The interposer can include a major surface, a recess in the major surface, a first plurality of interconnects passing through the interposer within the recess to electrically couple the substrate to a circuit board, and a second plurality of interconnects on the major surface of the interposer to electrically couple the substrate to the circuit board, wherein each of the second plurality of interconnects comprises a smaller cross-section than some of the first plurality of interconnects.

    INTEGRATED CIRCUIT PACKAGES WITH CONDUCTIVE ELEMENT HAVING CAVITIES HOUSING ELECTRICALLY CONNECTED EMBEDDED COMPONENTS

    公开(公告)号:US20210167023A1

    公开(公告)日:2021-06-03

    申请号:US17125593

    申请日:2020-12-17

    Abstract: Disclosed herein are integrated circuit (IC) structures with a conductive element coupled to a first surface of a package substrate, where the conductive element has cavities for embedding components and the embedded components are electrically connected to the conductive element, as well as related apparatuses and methods. In some embodiments, embedded components have one terminal end, which may be positioned vertically, with the terminal end facing into the cavity, and coupled to the conductive element. In some embodiments, embedded components have two terminal ends, which may be positioned vertically with one terminal end coupled to the conductive element and the other terminal end coupled to the package substrate. In some embodiments, embedded components include passive devices, such as capacitors, resistors, and inductors. In some embodiments, a conductive element is a stiffener.

Patent Agency Ranking