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    Optical ring modulator with photonic crystal
    161.
    发明授权
    Optical ring modulator with photonic crystal 有权

    公开(公告)号：US11609475B2

    公开(公告)日：2023-03-21

    申请号：US17119042

    申请日：2020-12-11

    Applicant: GLOBALFOUNDRIES U.S. INC.

    Inventor： Michal Rakowski ,  Yusheng Bian ,  Won Suk Lee ,  Roderick A. Augur

    IPC: G02F1/225

    Abstract: Embodiments of the disclosure provide an optical ring modulator. The optical ring modulator includes waveguide with a first semiconductor material of a first doping type, and a second semiconductor material having a second doping type adjacent the first semiconductor material. A P-N junction is between the first semiconductor material and the second semiconductor material. A plurality of photonic crystal layers, each embedded within the first semiconductor material or the second semiconductor material, has an upper surface that is substantially coplanar with an upper surface of the waveguide structure.

    LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS AND METHODS TO FORM SAME
    162.
    发明申请
    LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS AND METHODS TO FORM SAME 有权

    公开(公告)号：US20230083044A1

    公开(公告)日：2023-03-16

    申请号：US17457325

    申请日：2021-12-02

    Applicant: GlobalFoundries U.S. Inc.

    Inventor： Alexander M. Derrickson ,  John L. Lemon ,  Haiting Wang ,  Judson R. Holt

    IPC: H01L29/735 ,  H01L29/10 ,  H01L29/66

    Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.

    Floating gate memory cell and memory array structure
    163.
    发明授权
    Floating gate memory cell and memory array structure 有权

    公开(公告)号：US11600628B2

    公开(公告)日：2023-03-07

    申请号：US16743070

    申请日：2020-01-15

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Thomas Melde

    IPC: H01L27/11524 ,  H01L29/66 ,  H01L29/788 ,  H01L29/423 ,  H01L21/28 ,  H01L21/762 ,  H01L29/51

    Abstract: Embodiments of the disclosure provide a floating gate memory cell, including: a silicon-on-insulator (SOI) substrate, the SOI substrate including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, and a semiconductor layer formed on the buried oxide layer; a memory device, including: a control gate formed in the semiconductor layer of the SOI substrate; an insulating layer formed on the control gate; and a floating gate formed on the insulating layer; and a transistor device electrically connected to the memory device. The transistor device includes an active region formed in the semiconductor layer of the SOI substrate.

    DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS
    164.
    发明申请
    DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS 有权

    公开(公告)号：US20230067948A1

    公开(公告)日：2023-03-02

    申请号：US17540339

    申请日：2021-12-02

    Applicant: GlobalFoundries U.S. Inc.

    Inventor： Vibhor Jain ,  Judson R. Holt

    IPC: H01L29/739 ,  H01L29/66

    Abstract: Structures for a diode and methods of fabricating a structure for a diode. The structure includes a layer comprised of a semiconductor material. The layer includes a first section, a second section, and a third section laterally positioned between the first section and the second section. The structure includes a first terminal having a raised semiconductor layer on the first section of the layer, a second terminal including a portion on the second section of the layer, and a gate on the third section of the layer.

    LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HORIZONTAL WIDTH AND METHODS TO FORM SAME
    165.
    发明申请
    LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HORIZONTAL WIDTH AND METHODS TO FORM SAME 有权

    公开(公告)号：US20230067523A1

    公开(公告)日：2023-03-02

    申请号：US17456943

    申请日：2021-11-30

    Applicant: GlobalFoundries U.S. Inc.

    Inventor： Haiting Wang ,  Hong Yu ,  Zhenyu Hu ,  Alexander M. Derrickson

    IPC: H01L29/10 ,  H01L29/735 ,  H01L29/66

    Abstract: Embodiments of the disclosure provide a lateral bipolar transistor with a base layer of varying horizontal thickness, and related methods to form the same. A lateral bipolar transistor may include an emitter/collector (E/C) layer on a semiconductor layer. A first base layer is on the semiconductor layer and horizontally adjacent the E/C layer. The first base layer has a lower portion having a first horizontal width from the E/C layer. The first base layer also has an upper portion on the lower portion, with a second horizontal width from the E/C layer greater than the first horizontal width. A second base layer is on the first base layer and adjacent a spacer. The upper portion of the first base layer separates a lower surface of the second base layer from the E/C layer.

    PHOTONIC INTEGRATED CIRCUIT STRUCTURE WITH A TAPERED END PORTION OF ONE WAVEGUIDE ADJACENT TO A V-SHAPED END PORTION OF A DIFFERENT WAVEGUIDE
    166.
    发明申请
    PHOTONIC INTEGRATED CIRCUIT STRUCTURE WITH A TAPERED END PORTION OF ONE WAVEGUIDE ADJACENT TO A V-SHAPED END PORTION OF A DIFFERENT WAVEGUIDE 有权

    公开(公告)号：US20230067304A1

    公开(公告)日：2023-03-02

    申请号：US17411122

    申请日：2021-08-25

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Yusheng Bian ,  Roderick A. Augur

    IPC: G02B6/122 ,  G02B6/125 ,  G02B6/136

    Abstract: Disclosed is a photonic integrated circuit (PIC) structure including: a first waveguide with a first main body and a first end portion, which is tapered; and a second waveguide with a second main body and a second end portion, which has two branch waveguides that are positioned adjacent to opposing sides, respectively, of the first end portion of the first waveguide and that branch out from the second main body, thereby forming a V, U or similar shape. The arrangement of the two branch waveguides of the second end portion of the second waveguide relative to the tapered first end portion of the first waveguide allows for mode matching conditions to be met at multiple locations at the interface between the waveguides, thereby creating multiple signal paths between the waveguides and effectively reducing the light signal power density along any one path to prevent or at least minimize any power-induced damage.

    Photodetectors including a coupling region with multiple tapers
    169.
    发明授权
    Photodetectors including a coupling region with multiple tapers 有权

    公开(公告)号：US11588062B2

    公开(公告)日：2023-02-21

    申请号：US17065839

    申请日：2020-10-08

    Applicant: GLOBALFOUNDRIES U.S. Inc.

    Inventor： Abdelsalam Aboketaf ,  Yusheng Bian

    IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/102

    Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector includes a photodetector pad coupled to a waveguide core and a light-absorbing layer coupled to the photodetector pad. The light-absorbing layer has a body, a first taper that projects laterally from the body toward the waveguide core, and a second taper that projects laterally from the body toward the waveguide core. The photodetector pad includes a tapered section that is laterally positioned between the first taper and the second taper of the light-absorbing layer.

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