Abstract:
An integrated circuit includes input circuitry for receiving a radio frequency digital signal, output circuitry capable of delivering a radio frequency analog signal, and a processing stage coupled between the input circuitry and the output circuitry and including several processing channels in parallel. Each processing channel may include a voltage switching block the input of which is coupled to the input circuitry and a transmission line substantially of the quarter-wave type at the frequency of the radio frequency analog signal coupled in series between the output of the voltage switching block and the output circuitry.
Abstract:
A circuit for generating a reference voltage including: a first current source in series with a first bipolar transistor, between a first and a second terminal of application of a power supply voltage; a second current source in series with a second bipolar transistor and a first resistive element, between said first and second terminals, the junction point of the first resistive element and of the second bipolar transistor defining a third terminal for providing the reference voltage; a follower assembly having an input terminal connected between the first current source and the first bipolar transistor, and having an output terminal connected to a base of the second bipolar transistor; and a resistive dividing bridge between the output terminal of the follower assembly and said second terminal, the midpoint of this dividing bridge being connected to a base of the first bipolar transistor.
Abstract:
An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.
Abstract:
A system comprises a memory storing data at addresses associated with pixels in images, each address being linked by a function to coordinates of a pixel in an ordered image reference frame, a device for processing the data associated with the pixels, where a pixel being processed is referenced by an associated vector relative to a reference pixel, and an interface device providing data to the processing device. A data request indicates a vector associated with a pixel being processed. The coordinates of the reference pixel are determined by applying the function to an address associated with the reference pixel. Next the coordinates of the pixel being processed are obtained based on the coordinates of the reference pixel and on the vector. Then the address of the data associated with the pixel being processed is determined by applying the inverse function of the function to the coordinates of the pixel being processed.
Abstract:
An electronic device, includes sigma-delta modulation circuit to operate with a clock signal and having output circuitry to deliver a digital data signal. First circuitry delivers a radiofrequency transposition signal. A notch filter includes radiofrequency digital-to-analog conversion blocks, having first input circuitry coupled to the output circuitry. Second input circuitry receives the radiofrequency transposition signal. Second output circuitry delivers a radiofrequency analog signal. Digital delay circuitry is controlled by the clock signal and includes a delay block between the two first input circuits. The frequency of a notch of the notch filter is related to the value of the delay from the delay block. Summation circuitry sums the radiofrequency signals.
Abstract:
The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.
Abstract:
A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.
Abstract:
The determination of a reliability guideline of an electronic circuit having a nodal network of components including at least one reconvergence path between a correlation source and a sink, involves at the level of each component of the path, a computation of a conditional probability matrix whose conditioning is related to at least one node of the path situated upstream of the component.
Abstract:
A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.
Abstract:
A thin wafer comprising through holes filled at least partially with conductive carbon nanotubes generally oriented transversally to the wafer. A fuel cell comprising, in a thin wafer, a through hole filled with an electrolyte surrounded with barriers of carbon nanotubes generally oriented transversally to the wafer.