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    Field emission device with randomly distributed gate apertures
    162.
    发明授权
    Field emission device with randomly distributed gate apertures 失效
    具有随机分布的栅极孔径的场发射器件

    公开(公告)号：US5698934A

    公开(公告)日：1997-12-16

    申请号：US695441

    申请日：1996-08-12

    Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

    Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

    IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/8625

    Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying masking particles to the emitter material, applying an insulating film and a gate conductor film over the masking particles and emitter material and removing the particles to reveal a random distribution of apertures to the emitter material. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

    Abstract translation: 根据本发明，通过将发射体材料设置在绝缘基板上，将掩模粒子施加到发射极材料，在掩模颗粒和发射体材料上施加绝缘膜和栅极导体膜，并将颗粒除去，制成场致发射器件 揭示孔径随机分布到发射体材料。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。

    Field emission devices employing enhanced diamond field emitters
    164.
    发明授权
    Field emission devices employing enhanced diamond field emitters 失效
    采用增强金刚石场发射体的场致发射器件

    公开(公告)号：US5637950A

    公开(公告)日：1997-06-10

    申请号：US331458

    申请日：1994-10-31

    Applicant: Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

    Inventor： Sungho Jin ,  Gregory P. Kochanski ,  Lawrence Seibles ,  Wei Zhu

    IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

    CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

    Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

    Abstract translation: 申请人已经发现了用于制造，处理和使用金刚石的方法，其大大增强了它们的低电压发射能力。 具体来说，申请人已经发现，生长或处理以增加缺陷浓度的富含缺陷的钻石 - 金刚石具有增强的低电压发射性能。 富含缺陷的金刚石的特征在于在1332cm-1处的金刚石峰，在5-15cm -1（优选7-11cm -1）的范围内以最大DELTA K的全宽度加宽的拉曼光谱。 这样的富含缺陷的金刚石可以在25V /μm以下的低施加电场下发射0.1mA / mm 2以上的电子密度。 特别有利的结构在15V /μm或更小的场中使用直径小于10μm的岛或颗粒阵列中的这种金刚石。

    Process and structure of an integrated vacuum microelectronic device
    165.
    发明授权
    Process and structure of an integrated vacuum microelectronic device 失效
    集成真空微电子器件的工艺和结构

    公开(公告)号：US5629579A

    公开(公告)日：1997-05-13

    申请号：US486631

    申请日：1995-06-07

    Applicant: Steven M. Zimmerman

    Inventor： Steven M. Zimmerman

    IPC: H01J9/02 ,  H01J21/10

    CPC classification number: H01J21/105 ,  H01J9/025 ,  H01J2201/30457

    Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

    Abstract translation: 本发明一般涉及一种新的集成真空微电子器件（VMD）及其制造方法。 真空微电子器件需要几种独特的三维结构：尖锐的场发射尖端，尖端在真空环境中的控制栅格结构内的精确对准以及用于收集尖端发射的电子的阳极。 还公开了形成二极管，三极管，四极管，五极管和其他类似结构的新结构和工艺。 所制造的最终结构也可以连接到其他类似的VMD设备或其他电子设备。

    Method of making a field emission electron source with random micro-tip structures
    166.
    发明授权
    Method of making a field emission electron source with random micro-tip structures 失效
    制备具有随机微尖端结构的场发射电子源的方法

    公开(公告)号：US5628659A

    公开(公告)日：1997-05-13

    申请号：US427464

    申请日：1995-04-24

    Applicant: Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

    Inventor： Chenggang Xie ,  Nalin Kumar ,  Howard K. Schmidt

    IPC: H01J9/02 ,  H01J1/30 ,  H01J9/42

    CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.

    Abstract translation: 一种系统和方法可用于制造场致发射器件，其中发射极材料（例如铜）沉积在已沉积在衬底上的电阻层上。 使用两个离子束源。 第一离子束源指向诸如钼的靶材料，用于将钼溅射到发射极材料上。 第二离子束源用于蚀刻发射体材料以产生锥体或微尖端。 然后将诸如无定形金刚石的低功函数材料沉积在微尖端上。

    Manufacture of micro electron emitter
    169.
    发明授权
    Manufacture of micro electron emitter 失效
    微电子发射器的制造

    公开(公告)号：US5599749A

    公开(公告)日：1997-02-04

    申请号：US544922

    申请日：1995-10-18

    Applicant: Atsuo Hattori

    Inventor： Atsuo Hattori

    IPC: H01J9/02 ,  H01J1/16

    CPC classification number: H01J9/025 ,  H01J2201/30457 ,  H01L2924/00013

    Abstract: A method of manufacturing an electric field emission type device. A recess having a tapered surface at an upper portion of the recess is provided. A sacrificial film is deposited on the substrate with the tapered recess. A sharp cusp is therefore formed on the surface of the sacrificial film over the recess. An electron emitting material film is deposited on the sacrificial film to form a fine emitter with a sharp tip. This fine emitter is exposed by etching and removing unnecessary regions under the fine emitter. This manufacturing method realizes a high performance electric field emission type device having an emitter tip with a small radius of curvature and a small apex angle.

    Abstract translation: 一种制造电场发射型装置的方法。 设置有在凹部的上部具有锥形表面的凹部。 牺牲膜沉积在具有锥形凹槽的基底上。 因此，在凹部上的牺牲膜的表面上形成尖锐的尖点。 电子发射材料膜沉积在牺牲膜上以形成具有尖锐尖端的精细发射极。 该精细发射体通过蚀刻而除去精细发射体以下的不需要的区域。 该制造方法实现了具有小曲率半径和小顶角的发射极尖端的高性能电场发射型装置。

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