公开(公告)号：US08413511B2

公开(公告)日：2013-04-09

申请号：US13015987

申请日：2011-01-28

Applicant: Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

Inventor： Zhou Ge ,  Bin Yang ,  Zheng-Kui Meng ,  Yi-Lin Yan ,  Rui Zhang

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0848 ,  G01P2015/0854

Abstract: A accelerometer includes a substrate define a stationary electrode thereon, a first moveable mass defining a conductive-layer thereon facing the stationary electrode, a plurality of first elastic elements coupled with a peripheral side of the first moveable mass, a first fixed element surrounding the first moveable mass and fixedly attached to the substrate, a plurality of first fixed electrodes extending outwardly from the first fixed element, a second moveable mass surrounding the first fixed electrodes, a plurality of first moveable electrodes extending inwardly from the second moveable mass toward the first fixed element and parallel to the first fixed electrodes, respectively, a plurality of second elastic elements coupled with a peripheral side of the second moveable mass, and a second fixed element surrounding the second moveable mass and fixedly attached to the substrate.

Abstract translation: 加速度计包括在其上限定固定电极的基板，限定其面向固定电极的导电层的第一可移动质量块，与第一可移动质量块的周边连接的多个第一弹性元件，围绕第一 可移动的质量并且固定地附接到基板，从第一固定元件向外延伸的多个第一固定电极，围绕第一固定电极的第二可移动质量;从第二可移动质量向内朝向第一固定 并且与第一固定电极平行的多个第二弹性元件分别与第二可移动质量体的周边连接，第二固定元件围绕第二可移动质量块并且固定地附着在基底上。

公开(公告)号：US08411310B2

公开(公告)日：2013-04-02

申请号：US12438533

申请日：2007-08-22

Applicant: Bin Yang ,  Haifeng Li

Inventor： Bin Yang ,  Haifeng Li

IPC: G06K15/00

CPC classification number: H04N1/4052

Abstract: Disclosed is a method for scanning and processing an image using the error diffusion screening technology, comprising: (1) scanning each pixel Mi of an nth line in an original image one by one and then storing a scanning result of the pixel Mi to an ith storage location; and (2) processing the stored result of the pixel Mi by using error diffusion and scanning pixels of an n+1th line in the original image until all pixels of the nth line have been processed and all pixels in the n+1th line have been scanned and stored, wherein once processing for the pixel Mi is completed, a scanning result of a pixel of the n+1th line is stored to the ith storage location previously occupied by the pixel Mi. Based on the method, the capacity for storing is only required to be able to store the data of one line in an image in the scanning direction, which saves the storage for bidirectional scanning. The method can optimize the hardware used to implement error diffusion and improve the operating efficiency. Also disclosed is a system for achieving the method.

Abstract translation: 公开了一种使用误差扩散筛选技术对图像进行扫描和处理的方法，包括：（1）逐个扫描原始图像中的第n行的每个像素Mi，然后将像素Mi的扫描结果存储到第i个 存储位置; 和（2）通过使用原始图像中的第n + 1行的误差扩散和扫描像素来处理像素Mi的存储结果，直到第n行的所有像素都被处理并且第n + 1行中的所有像素已被 扫描并存储，其中一旦针对像素Mi的处理完成，将第n + 1行的像素的扫描结果存储到先前由像素Mi占据的第i个存储位置。 基于该方法，存储容量只需要能够将扫描方向上的一行数据存储在图像中，从而节省用于双向扫描的存储。 该方法可以优化用于实现误差扩散的硬件，提高运行效率。 还公开了一种用于实现该方法的系统。

公开(公告)号：US20130049200A1

公开(公告)日：2013-02-28

申请号：US13598686

申请日：2012-08-30

Applicant: Paul R. Besser ,  Roy A. Carruthers ,  Christopher P. D'Emic ,  Christian Lavoie ,  Conal E. Murray ,  Kazuya Ohuchi ,  Christopher Scerbo ,  Bin Yang

Inventor： Paul R. Besser ,  Roy A. Carruthers ,  Christopher P. D'Emic ,  Christian Lavoie ,  Conal E. Murray ,  Kazuya Ohuchi ,  Christopher Scerbo ,  Bin Yang

IPC: H01L29/43

CPC classification number: H01L21/26506 ,  H01L21/28518 ,  H01L29/00 ,  H01L29/665 ,  H01L29/7833

Abstract: Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to fond an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon layer in contact with the amorphous silicon region. A silicide process is then performed to combine the rare earth metal film and the amorphous silicon region to form a silicide film on the silicon layer.

Abstract translation: 具有改进的稀土硅化物形态的硅化技术用于制造半导体器件触点。 例如，用于形成硅化物的方法包括将具有非晶化物质的硅层注入以在硅层中融合非晶硅区域，并在与非晶硅区域接触的硅层上沉积稀土金属膜。 然后进行硅化处理以组合稀土金属膜和非晶硅区域，以在硅层上形成硅化物膜。

公开(公告)号：US08325472B2

公开(公告)日：2012-12-04

申请号：US12815412

申请日：2010-06-15

Applicant: Yen-Chun Wang ,  An-Chi Wei ,  Hong-Bin Yang ,  Ming-Young Shiao ,  Chih-Ming Lai

Inventor： Yen-Chun Wang ,  An-Chi Wei ,  Hong-Bin Yang ,  Ming-Young Shiao ,  Chih-Ming Lai

IPC: G06F1/16

CPC classification number: G06F1/1616 ,  F21V14/06 ,  F21V33/0052 ,  F21Y2115/10 ,  G06F1/1686

Abstract: An electronic apparatus includes a mainframe with a keyboard embedded therein, a mounting frame pivotally connected with the mainframe, a display screen mounted in the mounting frame, a lighting source disposed on the mounting frame, and an optical element cooperating with the lighting source and slideably mounted on the mounting frame. Light from the lighting source is projected to different predetermined areas by adjusting positions of the optical element relative to the lighting source. In each of the positions of the optical element, the light from the lighting source is modulated by a corresponding portion of the optical element to be projected to a corresponding predetermined area.

Abstract translation: 一种电子设备，包括嵌入其中的键盘的主机，与主机枢转地连接的安装框架，安装在安装框架中的显示屏，设置在安装框架上的照明源，以及与照明源协作的光学元件，并且可滑动地 安装在安装架上。 通过调整光学元件相对于照明源的位置，将来自照明源的光投射到不同的预定区域。 在光学元件的每个位置，来自光源的光被光学元件的相应部分调制以投影到相应的预定区域。

公开(公告)号：US08293609B2

公开(公告)日：2012-10-23

申请号：US13355221

申请日：2012-01-20

Applicant: Rohit Pal ,  Frank Bin Yang ,  Michael J. Hargrove

Inventor： Rohit Pal ,  Frank Bin Yang ,  Michael J. Hargrove

IPC: H01L21/336

CPC classification number: H01L29/66636 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7848

Abstract: Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.

Abstract translation: 提供半导体晶体管器件及相关制造方法。 示例性晶体管器件包括其中限定有沟道区的半导体材料层和覆盖沟道区的栅极结构。 凹槽在与沟道区相邻的半导体材料层中形成，使得凹槽朝向沟道区不对称地延伸。 晶体管器件还包括形成在凹槽中的应力诱导半导体材料。 应力诱导半导体材料的不对称轮廓以不会加剧短通道效应的方式提高载流子迁移率。

公开(公告)号：US08278200B2

公开(公告)日：2012-10-02

申请号：US13012043

申请日：2011-01-24

Applicant: Christian Lavoie ,  Tak H. Ning ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

Inventor： Christian Lavoie ,  Tak H. Ning ,  Ahmet S. Ozcan ,  Bin Yang ,  Zhen Zhang

IPC: H01L21/20

CPC classification number: H01L21/28518

Abstract: In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.

Abstract translation: 在一个示例性实施例中，一种可由机器读取的程序存储设备，其有形地体现了可由机器执行的用于执行操作的指令程序，所述操作包括：在半导体结构的表面上沉积具有第一金属的第一层， 第一层在第一层和半导体结构的界面处形成第一混合区; 去除沉积的第一层的一部分以暴露第一混合区; 在所述第一混合区域上沉积具有第二金属的第二层，其中沉积所述第二层在所述第二层和所述第一混合区的界面处产生第二混合区; 去除沉积的第二层的一部分以暴露第二混合区; 以及在所述半导体结构上执行至少一个退火。

公开(公告)号：US08252245B2

公开(公告)日：2012-08-28

申请号：US11266582

申请日：2005-11-03

Applicant: Anna Lee Tonkovich ,  David J. Hesse ,  Sean P. Fitzgerald ,  Bin Yang ,  Ravi Arora ,  Laura J. Silva ,  G. Bradley Chadwell ,  Kai Jarosch ,  Dongming Qiu

Inventor： Anna Lee Tonkovich ,  David J. Hesse ,  Sean P. Fitzgerald ,  Bin Yang ,  Ravi Arora ,  Laura J. Silva ,  G. Bradley Chadwell ,  Kai Jarosch ,  Dongming Qiu

IPC: B01J19/24 ,  F28D9/00 ,  B01B1/00

CPC classification number: F28F1/00 ,  B01B1/005 ,  B01J19/0013 ,  B01J19/0093 ,  B01J2219/00054 ,  B01J2219/00074 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00869 ,  B01J2219/00873 ,  B01J2219/00891 ,  B01J2219/00995 ,  B01J2219/182 ,  B01J2219/2411 ,  B01J2219/2462 ,  C07B61/00 ,  F28D9/00 ,  F28D15/04 ,  F28D2015/0225 ,  F28D2021/0022 ,  F28D2021/0064 ,  F28F13/00 ,  F28F13/187 ,  F28F2260/02

Abstract: The invention provides methods, apparatus and systems in which there is partial boiling of a liquid in a mini-channel or microchannel. The partial boiling removes heat from an exothermic process.

Abstract translation: 本发明提供了在微通道或微通道中存在液体部分沸腾的方法，装置和系统。 部分沸腾从放热过程中除去热量。

公开(公告)号：US20120190083A1

公开(公告)日：2012-07-26

申请号：US13278106

申请日：2011-10-20

Applicant: Jin Sook CHANG ,  Jae Hyun JO ,  Hyun Ae BAE ,  Byeong Cheol SONG ,  Sol KIM ,  Hye Won KIM ,  Hye Won UM ,  Sung Hoo JHON ,  Yong Uk SHIN ,  Eun Bin YANG ,  Kyoung Min LEE ,  Soo An SHIN

Inventor： Jin Sook CHANG ,  Jae Hyun JO ,  Hyun Ae BAE ,  Byeong Cheol SONG ,  Sol KIM ,  Hye Won KIM ,  Hye Won UM ,  Sung Hoo JHON ,  Yong Uk SHIN ,  Eun Bin YANG ,  Kyoung Min LEE ,  Soo An SHIN

IPC: C12P13/12 ,  C12N1/21

CPC classification number: C12P13/12 ,  C12N9/1085 ,  C12N9/16 ,  C12N15/70 ,  C12N15/77 ,  C12P13/06 ,  C12Y205/01065 ,  C12Y301/03003

Abstract: The present invention provides methods for the production of cysteine or derivates thereof by culturing a microorganism having reduced activity of endogenous phosphoserine phosphatase and the activity of PhnC, PhnD, and PhnE is reduced, and enhanced activity of phosphoglycerate dehydrogenase and/or phosphoserine aminotransferase. The O-phosphoserine produced by such an organism can then be reacted with a sulfide in the presence of a sulfydrylase or a microorganism expressing a sulfhydrylase to produce cysteine or a derivative thereof. Microorganisms having these reduced and enhanced properties noted above are also provided herein.

Abstract translation: 本发明提供了通过培养具有降低的内源性磷酸丝氨酸磷酸酶活性的微生物来生产半胱氨酸或其衍生物的方法，并且PhnC，PhnD和PhnE的活性降低，并且提高了磷酸甘油酸脱氢酶和/或磷酸丝氨酸氨基转移酶的活性。 由这样的生物体产生的O-磷酸丝氨酸然后可以在硫酸酯或表达巯基化酶的微生物的存在下与硫化物反应，以产生半胱氨酸或其衍生物。 本文还提供了具有上述这些降低和增强性能的微生物。

公开(公告)号：US20120135142A1

公开(公告)日：2012-05-31

申请号：US13375589

申请日：2010-03-30

Applicant: Ji-bin Yang ,  Koji Hoshino ,  Kenji Orito ,  Hitoshi Maruyama

Inventor： Ji-bin Yang ,  Koji Hoshino ,  Kenji Orito ,  Hitoshi Maruyama

IPC: B05D5/00 ,  B05D3/02

CPC classification number: H01M4/667 ,  B22F3/1125 ,  B22F5/006 ,  B22F7/006 ,  B22F2998/10 ,  B32B15/01 ,  C22C1/0416 ,  C22C21/00 ,  C22C21/12 ,  H01M4/661 ,  H01M4/803 ,  H01M4/808 ,  B22F9/04 ,  B22F1/0074

Abstract: This method for producing an aluminum composite including porous sintered aluminum, includes: mixing aluminum powder with a sintering aid powder containing either one or both of titanium and titanium hydride to obtain a raw aluminum mixed powder; adding and mixing a water-soluble resin binder, water, a plasticizer containing at least one selected from polyhydric alcohols, ethers, and esters, and a water-insoluble hydrocarbon-based organic solvent containing five to eight carbon atoms into the raw aluminum mixed powder to obtain a viscous composition; shape-forming the viscous composition on an aluminum foil or an aluminum plate and causing the viscous composition to foam to obtain a formed object prior to sintering; and heating the formed object prior to sintering in a non-oxidizing atmosphere to obtain an aluminum composite which includes porous sintered aluminum integrally joined onto the aluminum foil or the aluminum plate, wherein when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (° C.), then a temperature T (° C.) of the heating fulfills Tm-10 (° C.)≦T≦685 (° C.).

Abstract translation: 该制造包含多孔烧结铝的铝复合材料的方法包括：将铝粉与含有钛和氢化钛中的一种或两种的烧结助剂粉末混合，得到原铝混合粉末; 将水溶性树脂粘合剂，水，含有选自多元醇，醚和酯中的至少一种的增塑剂和含有5至8个碳原子的水不溶性烃类有机溶剂加入并混合到生铝混合粉末中 得到粘稠组合物; 在铝箔或铝板上形成粘性组合物，并使粘性组合物发泡以在烧结之前获得成形物体; 在非氧化性气氛中烧结之前对成形体进行加热，得到铝复合体，其包含整体接合在铝箔或铝板上的多孔烧结铝，其中，当原铝混合粉末开始熔融的温度为 表示为Tm（℃），则加热的温度T（℃）满足Tm-10（℃）＆nlE; T＆nlE; 685（℃）。

公开(公告)号：US08168503B2

公开(公告)日：2012-05-01

申请号：US12726736

申请日：2010-03-18

Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

IPC: H01L21/336

CPC classification number: H01L29/7839 ,  H01L29/78654

Abstract: A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

Abstract translation: 提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。 栅极结构直接形成在第一半导体层上。 凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。 凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。 在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。