Abstract:
A light-emitting diode lamp with multi-channel constant-voltage and constant-current control is disclosed. The light-emitting diode lamp includes a constant-current controller, a feedback controller, a constant-voltage controller, a plurality of light-emitting diode apparatuses, a plurality of first feedback components, and a plurality of second feedback components. The constant-current controller, the feedback controller, and the constant-voltage controller are used to process current signals and voltage signals fed back from the light-emitting diode apparatuses to provide an adaptive multi-channel constant-voltage and constant-current control, thus increasing overall efficiency and operation flexibility of the light-emitting diode lamp under the alternating current or direct current power supply.
Abstract:
An active matrix substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of independent common line patterns, and a plurality of pixels is provided. The scan lines, data lines, and common line patterns are disposed on the substrate. The pixels are arranged in array on the substrate, wherein each pixel is electrically connected to corresponding scan line and data line, and the common line patterns are distributed under each pixel. Each pixel includes a plurality of active components and a plurality of pixel electrodes. Each of the pixel electrodes is electrically connected to corresponding scan line and data line through different active components. The capacitance coupling effect between each of the pixel electrodes and common line patterns are different. Additionally, an inspection method for the active matrix substrate and a liquid crystal display having the active matrix substrate are further provided.
Abstract:
A semiconductor device includes a semiconductor substrate having a conductive type, a source metal layer, a gate metal layer, at least one transistor device, a heavily doped region having the conductive type, a capacitor dielectric layer, a conductive layer. The source metal layer and the gate metal layer are disposed on the semiconductor substrate. The transistor device is disposed in the semiconductor substrate under the source metal layer. The heavily doped region, the capacitor dielectric layer and the conductive layer constitute a capacitor structure, disposed under the gate metal layer, and the capacitor structure is electrically connected between a source and a drain of the transistor device.
Abstract:
A cleaning method for a wafer is provided. First, a first cleaning process is performed wherein the first cleaning process includes providing a cleaning solution having a first concentration. Next, a second cleaning process is performed, wherein the second cleaning process includes providing the cleaning solution having a second concentration. The second concentration is substantially greater than the first concentration. Next, a post-cleaning process is performed to provide dilute water.
Abstract:
The present invention provides a 3D image display device. The 3D image display device includes a backlight module; a first linear polaroid disposed in front of the backlight module to polarize the light from the backlight module; a first liquid crystal layer disposed in front of the first linear polaroid; a second linear polaroid disposed in front of the first liquid crystal layer, the second linear polaroid having a determined polarizing angle to polarize image signals; a second liquid crystal layer disposed in front of the second linear polaroid to switch a linear polarization orientation of image signals; and a retarding layer disposed in front of the second liquid crystal layer to transform the linear polarization orientation into a circular polarization orientation.
Abstract:
Some embodiments regard a memory array that has a plurality of rows and columns. A column includes a program control device, a plurality of eFuse memory cells in the column, a sense amplifier, and a bit line coupling the program control device, the plurality of memory cells in the column, and the sense amplifier. A row includes a plurality of eFuse memory cells in the row, a word line coupling the plurality of eFuse memory cells in the row, and a footer configured as a current path for the plurality of eFuse memory cells in the row.
Abstract:
A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.
Abstract:
An opto-electronic device assembly adapted for mounted on a mother board includes a case and opto-electronic devices. The case has multiple cavities opening forwards and downwards. Each opto-electronic device includes an optical engine module and an electrical socket. The optical engine module includes an optical engine, an optical transmission interface and an electrical transmission interface with electrical pads. The electrical socket has a plurality of terminals with one ends contacting with PCB and another opposite ends contacting with the electrical pads. Each electrical transmission interface is removeably assembled in the electrical sockets to complete electrical connection between the substrate and the mother board. The opto-electrical devices are received in the cavities in a condition that the optical transmission interfaces exposes to a front open of the case.
Abstract:
A chrome-free corrosion inhibitor composition includes: titanium chloride; a stabilizer including a mixture of hydrogen peroxide and at least a compound selected from nitric acid, persulfate, nitrate, and chlorate; and a film-forming enhancer selected from monosaccharide, oligosaccharide, polysaccharide, derivatives of saccharide, and combinations thereof.
Abstract:
The present invention discloses a vegetable tower, which comprises a main body. A main spiral slide guide is disposed inside the main body and vegetable growing bins can be hung on the main spiral slide guide via a plurality of chains and then slipped downstream along the main spiral slide guide by means of gravity. The vegetable growing bins further comprises several supply tubes and supply inlets. A main control module is built inside the main body, and it can automatically ascend and descend inside the main body to perform identifying, feeding, catching images and measuring functionalities. The main control module can feed the vegetable growing bins with water, fertilizer, CO2. The central management module and the main control module are integrated to be an automatic planting-care system to make the growths of the vegetables under well control.