公开(公告)号：US20200052153A1

公开(公告)日：2020-02-13

申请号：US16660449

申请日：2019-10-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Asako HIRAI

IPC: H01L33/02 ,  H01L33/00 ,  H01S5/343 ,  H01S5/042 ,  H01L33/32 ,  H01L33/06 ,  H01L33/14

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10). Furthermore, each injection region (2) is laterally surrounded by a continuous path of the active layer (11), the active layer (11) being doped less in the path than in the injection region (2) or oppositely thereto. During the operation of the semiconductor element (100), charge carriers reach the injection regions (2) at least partly from the first layer (10) and are directly injected into the active layer (11) from there.

公开(公告)号：US20200051963A1

公开(公告)日：2020-02-13

申请号：US16498996

申请日：2018-04-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz

IPC: H01L25/16 ,  H01L33/50 ,  H01L25/075

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor layer sequence comprising a plurality of pixels and an active layer, wherein the active layer is configured to emit a primary radiation in a blue region of an electromagnetic spectrum with a peak wavelength of between 420 nm inclusive and 480 nm inclusive, applying a first photoresist and a first converter material on the semiconductor layer sequence, exposing the first photoresist with radiation having the peak wavelength longer than the peak wavelength of the primary radiation, curing the first photoresist by polymerization in order to form a first converter layer comprising a matrix material and the first converter material and structuring the first converter layer.

公开(公告)号：US20200048547A1

公开(公告)日：2020-02-13

申请号：US16101270

申请日：2018-08-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Darshan Kundaliya ,  Jeffery J. Serre ,  James Avallon ,  Kathleen A. Lawson

IPC: C09K11/08 ,  C01F17/00 ,  H01L33/26 ,  H01L21/02

Abstract: A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720° C.

公开(公告)号：US20200046275A1

公开(公告)日：2020-02-13

申请号：US16660008

申请日：2019-10-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Michael Klein ,  David O'Brien

IPC: A61B5/1455 ,  A61B5/00

Abstract: A pulse oximetry device includes a light emission device configured to emit light with a wavelength in a first wavelength interval and light with a wavelength in a second wavelength interval, a first light detector configured to detect light with a wavelength in the first wavelength interval, but not to respond to light with a wavelength in the second wavelength interval, and a second light detector configured to detect light with a wavelength in the first wavelength interval and detect light with a wavelength in the second wavelength interval, wherein the light emission device has a first light-emitting diode structure configured to emit light with a wavelength in the first wavelength interval, and a second light-emitting diode structure configured to emit light with a wavelength in the second wavelength interval, and the first light-emitting diode structure and the second light-emitting diode structure are arranged in a common light-emitting diode chip.

公开(公告)号：US10554019B2

公开(公告)日：2020-02-04

申请号：US15765997

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Norwin Von Malm ,  Tilman Ruegheimer ,  Thomas Kippes

IPC: H01S5/227 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01L23/00 ,  H01S5/024 ,  H01S5/323 ,  H01S5/22 ,  H01L21/56

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

公开(公告)号：US20200035855A1

公开(公告)日：2020-01-30

申请号：US16488571

申请日：2018-03-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Höppel

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/56

Abstract: A method for transferring semiconductor bodies and a semiconductor chip are disclosed. In an embodiment a method includes providing a semiconductor structure on a growth substrate, arranging a cover layer on a side of the semiconductor structure facing away from the growth substrate, wherein the cover layer is mechanically fixedly connected to the semiconductor structure, arranging a transfer structure on a side of the cover layer facing away from the semiconductor structure, wherein the transfer structure is mechanically fixedly connected to the cover layer via at least one contact structure, wherein a sacrificial layer is arranged between the cover layer and the transfer structure, and wherein the sacrificial layer does not cover any of the at least one contact structure, removing the growth substrate from the semiconductor structure, subdividing the semiconductor structure into a plurality of semiconductor bodies, arranging a carrier on a side of the semiconductor body facing away from the transfer structure, selectively removing the sacrificial layer and removing the transfer structure from the semiconductor bodies.

公开(公告)号：US20190386175A1

公开(公告)日：2019-12-19

申请号：US16480532

申请日：2018-03-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Xue Wang ,  Markus Bröll ,  Anna Nirschi

IPC: H01L33/14 ,  H01L33/02 ,  H01L33/06 ,  H01L33/12 ,  H01L33/30 ,  H01L33/44 ,  H01L33/40

Abstract: A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

公开(公告)号：US20190384140A1

公开(公告)日：2019-12-19

申请号：US16488105

申请日：2018-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Schulten ,  Michael Schumann ,  Dominik Scholz

IPC: G03B15/05 ,  H04N5/235 ,  H04N5/225

Abstract: An assembly is disclosed. In an embodiment an assembly includes a light source configured to illuminate a field of view, a control circuit configured to operate the light source and a camera configured to record a scene in the field of view, wherein the light source comprises at least one semiconductor component having at least one semiconductor chip, wherein the semiconductor chip has an semiconductor layer sequence with an active region, wherein the semiconductor chip comprises the plurality of pixels, wherein the plurality of pixels are configured to generate radiation of the light source, wherein the control circuit has a memory configured to store operational data of the light source, wherein the control circuit is configured to operate the pixels on basis of the operational data, and wherein the arrangement is configured to perform an adaptation of at least a part of the operational data in the memory during operation of the arrangement.

公开(公告)号：US20190371774A1

公开(公告)日：2019-12-05

申请号：US16475648

申请日：2018-01-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lorenzo Zini ,  Martin Rudolf Behringer

IPC: H01L25/16 ,  H01L33/58 ,  H01L33/50

Abstract: A display device is disclosed. In an embodiment a display device includes a carrier including a plurality of switches, a semiconductor layer sequence arranged on the carrier, the semiconductor layer sequence comprising an active region configured to generate primary radiation and forming a plurality of pixels, wherein each switch is configured to control at least one pixel and an optical element arranged on each pixel on a radiation exit surface of the semiconductor layer sequence facing away from the carrier.

公开(公告)号：US20190355880A1

公开(公告)日：2019-11-21

申请号：US16413490

申请日：2019-05-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Norwin von Malm

IPC: H01L33/50 ,  H01L33/60 ,  H01L27/15

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, and a wavelength conversion element having conversion regions, the conversion regions optically separated from one another by metallic separators, wherein the wavelength conversion element is arranged downstream of the semiconductor body in the main radiation direction of the active region, wherein the active region comprises a plurality of independently controllable emission regions, and wherein the emission regions are at least partially aligned with the conversion regions and explicitly assigned to the conversion regions.