Abstract:
A multiple mode switching regulator with a bootstrap technique includes an inductor 20; a high side input switch 22 coupled to a first end of the inductor 20; a low side input switch 24 coupled to the first end of the inductor 20; a high side driver 34 coupled to a control node of the high side input switch 22; a low side driver 36 coupled to a control node of the low side input switch 24; a high side output switch 26 coupled to a second end of the inductor 20; a low side output switch 28 coupled to the second end of the inductor 20; a first bootstrap capacitor 30 coupled between the first end of the inductor 20 and a voltage supply node of the high side driver 34; a second bootstrap capacitor 32 coupled between the second end of the inductor 20 and a voltage supply node of the low side driver 36; and a first diode 40 coupled between the voltage supply node of the high side driver 34 and the voltage supply node of the low side driver 36. The two bootstrap capacitors 30 and 32 are employed on both sides of inductor 20 to provide gate voltage to high side input switch 22 through high side driver 34 in any mode of operation. This allows the regulator to work in three modes of operation without different external components or configurations depending on the mode.
Abstract:
One aspect of the invention is an integrated circuit (10 or 110) comprising an amplifier (11 or 111) having at least two poles in its frequency response and an output impedance compensation circuit (M1A, M2, M3, AC1 or M1A, M2, M3, M4, AC1) coupled to an output node (30) of the amplifier (11 or 111). The output impedance compensation circuit (M1A, M2, M3, AC1 or M1A, M2, M3, M4, AC1) is operable to create a feedback signal proportional to the impedance of an output load (50) coupled to the output node (30), and create a zero in the frequency response of the amplifier (11 or 111) in response to the feedback signal between the at least two poles.
Abstract:
An installation tool for installing a support hanger in an aircraft, where the support hanger includes a main hook body and a complimentary hook body slidably coupled with the main hook body. The support hanger further includes a locking mechanism for selectively locking the main hook body and the complimentary hook body. The installation tool comprises a handle having a pivot surface that engages the main hook body of the support hanger. A wedge-shaped slot is formed in the handle and includes a pair of surfaces. An interfering member is then disposed within the wedge-shaped slot. This interfering member is positionable in a first position where the interfering member engages at least one of the pair of surfaces and a free end of the complimentary hook body and a second position where the interfering member is disengaged from the pair of surfaces so as to permit simple and convenient tightening of the support hanger.
Abstract:
The subject invention pertains to a series of cyclic peptides known as the microsclerodermins, which possess unusual amino acids, and which have been observed to inhibit the proliferation of tumor cell lines. The subject invention also pertains to methods useful in inhibiting pathological cellular proliferation in animals, including humans and other mammals. In accordance with the teachings of the subject invention, microsclerodermin compounds can be used to inhibit cellular proliferation including that which is responsible for tumors and other cancers. In a specific embodiment, the novel compositions and methods of use of the subject invention can advantageously be useful in the treatment of a patient hosting cancer cells, for example, inhibiting the growth of tumor cells in a mammalian host.
Abstract:
A high-breakdown voltage transistor (30; 30′) is disclosed. The transistor (30; 30′) is formed into a well arrangement in which a shallow, heavily doped, well (44) is disposed at least partially within a deeper, more lightly-doped well (50), both formed into an epitaxial layer (43) of the substrate (42). The deep well (50) is also used, by itself, for the formation of high-voltage transistors, while the shallower well (44) is used by itself in low-voltage, high-performance transistors. This construction permits the use of high-performance, and precisely matching, transistors in high bias voltage applications, without fear of body-to-substrate (or “back-gate-to-substrate”) junction breakdown.
Abstract:
A field emission device (10) for reducing the power dissipation of an array (14) includes video controller (12) coupled to array (14) by memory (13), column drivers (16), row drivers (20), and anode power supply (22). Column drivers (16) includes PWM circuit (17) coupled to signal conditioner (18). Signal conditioner (18) receives input digital signal (24) from PWM circuit (17) and generates output digital signal (26) that reduces the frequency of state transitions of signal (24) while maintaining the same duty cycle as that of signal (24). This reduces the power dissipation of parasitic capacitances (36) associated with array (14) pursuant to the equation P=½CV2f.
Abstract:
A circuit for protecting a transistor against electrical transients. The circuit comprises a first diode coupled between a first terminal coupled to a power supply and a control terminal of the protected transistor. The circuit also comprises a second diode and a resistor coupling the control terminal of the protected transistor to a reference potential. A second transistor is coupled in shunt to the protected transistor. The voltage on the control terminal of the second transistor is determined by the current through the resistor. The embodiments may be implemented in an integrated circuit wherein the second, shunting transistor is formed from parasitic elements within the semiconductor body in which the protected transistor is formed. In one embodiment, the protected MOS transistor is formed in an n-well 504 and a shunting bipolar transistor is formed between the n-well 504 and an n-doped guard ring 500 formed adjacent to the n-well in the p-doped substrate 508.
Abstract:
A transistor including a source region 506 in a semiconductor body 502; a bulk region 508 in the semiconductor body adjacent the source region; a drain region in the semiconductor body adjacent the bulk region but opposite the source region, the drain region including doped regions 504,514 of n and p dopant types; and a field plate 516 formed over the semiconductor body adjacent the drain region between the drain region and the bulk region.
Abstract:
A lockable electrical female connector for locking therein prongs of a male plug comprising a female receptacle housing wherein the housing comprises a first cavity and a second cavity wherein the first cavity is isolated from the second cavity. The lockable female electrical connector further comprises a ground receptacle member housed in the first cavity, a first electrical receptacle member housed in the second cavity wherein the first electrical receptacle member comprises a first slot; and a second electrical receptacle member housed in the second cavity wherein the second electrical receptacle member comprises a second slot. The prongs of a male plug are receive in the ground receptacle member and the first and second electrical members and are locked therein via a locking wedge member. The locking wedge member is nested between the first electrical receptacle member and the second electrical receptacle member and is traversed forward via a single knob.
Abstract:
A sealing system provides for plugging holes in a ferromagnetic tank structure. A tripod has variable length legs for placing on a curved or irregular surface of the tank structure. A permanent magnet assembly is attached to each one of the variable length legs for removably attaching the legs individually to the ferromagnetic tank structure. An actuator is mounted in the tripod for positioning over the hole for movement generally perpendicular to the tank structure in which the hole is located. A clamping plug is mounted on the actuator for insertion into and sealing the hole.