公开(公告)号：US09842657B1

公开(公告)日：2017-12-12

申请号：US15599243

申请日：2017-05-18

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Deepanshu Dutta ,  Xiaochang Miao ,  Muhammad Masuduzzaman

IPC: G11C16/06 ,  G11C16/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C16/24

CPC classification number: G11C16/3459 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3481 ,  G11C2211/5622

Abstract: Multi-state programming of non-volatile memory cells, where cells being programmed to different target states are programmed concurrently, is performed by modulating the program speed of each state using a controlled amount of state-dependent weak boosting in their respective channels. In one example, the channel boosting is controlled by using a multi-stair word line ramp in conjunction with raising of the voltage on bit lines at a time based on the corresponding memory cell's target state.

公开(公告)号：US09805809B1

公开(公告)日：2017-10-31

申请号：US15253864

申请日：2016-08-31

Applicant: SanDisk Technologies LLC

Inventor： Zhenming Zhou ,  Guirong Liang ,  Gerrit Jan Hemink ,  Dana Lee ,  Chandu Gorla ,  Sarath Puthenthermadam ,  Deepanshu Dutta

IPC: G11C16/00 ,  G11C16/26 ,  G11C16/04 ,  G11C16/16 ,  G11C16/08

CPC classification number: G11C16/26 ,  G11C16/0433 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3427

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for state-dependent read compensation. A set of non-volatile storage cells comprising a plurality of word lines. A controller is configured to perform a read operation on one or more word lines adjacent to a target word line. A controller is configured to determine a read setting for application to a target word line based on a result of a read operation on one or more word lines adjacent to the target word line. A controller is configured to perform a read operation on a target word line using a determined read setting.

公开(公告)号：US20170309344A1

公开(公告)日：2017-10-26

申请号：US15640563

申请日：2017-07-02

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Deepanshu Dutta ,  Arash Hazeghi ,  Huai-Yuan Tseng ,  Cynthia Hsu ,  Navneeth Kankani

IPC: G11C16/34 ,  G11C16/32 ,  G11C16/04

CPC classification number: G11C16/3459 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/32

Abstract: Systems and methods for improving the reliability of data stored in memory cells are described. To mitigate the effects of trapped electrons after one or more programming pulses have been applied to memory cells, a delay between the one or more programming pulses and subsequent program verify pulses may be set based on a chip temperature, the number of the one or more programming pulses that were applied to the memory cells, and/or the programming voltage that was applied to the memory cells during the one or more programming pulses. To mitigate the effects of residual electrons after one or more program verify pulses have been applied to memory cells, a delay between the one or more program verify pulses and subsequent programming pulses may be set based on a chip temperature and/or the programming voltage to be applied to the memory cells during the subsequent programming pulses.

公开(公告)号：US09721652B2

公开(公告)日：2017-08-01

申请号：US15354446

申请日：2016-11-17

Applicant: SanDisk Technologies LLC

Inventor： Sarath Puthenthermadam ,  Deepanshu Dutta

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C11/5642 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/3427 ,  G11C16/3459

Abstract: A variable compensation pass bias based on a state being sensed in non-volatile memory based is provided. Shifts in the apparent charge stored by a memory cell can occur because of coupling based on charge stored by adjacent cells. To account for the shift, compensations can be applied to an adjacent word line when reading based on the different possible conditions of an adjacent cell. The effects of coupling may be more pronounced for memory cells in lower states corresponding to lower threshold voltages. A compensation pass bias can be reduced as the state being sensed at a selected word line increases to account for the different effects. A compensation pass bias for an adjacent word line may be reduced with the application of larger read reference voltages to a selected word line. Other variations to a compensation pass bias are provided.