公开(公告)号：US11581430B2

公开(公告)日：2023-02-14

申请号：US16548518

申请日：2019-08-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： David Pritchard ,  Heng Yang ,  Hongru Ren ,  Neha Nayyar ,  Manjunatha Prabhu ,  Elizabeth Strehlow ,  Salvatore Cimino

IPC: H01L29/06 ,  H01L31/00 ,  H01L29/76 ,  H01L29/08 ,  H01L29/10

Abstract: A planar transistor device is disclosed including a gate structure positioned above a semiconductor substrate, the semiconductor substrate comprising a substantially planar upper surface, a channel region, a source region, a drain region, and at least one layer of a two-dimensional (2D) material that is positioned in at least one of the source region, the drain region or the channel region, wherein the layer of 2D material has a substantially planar upper surface, a substantially planar bottom surface and a substantially uniform vertical thickness across an entire length of the layer of 2D material in the gate length direction and across an entire width of the layer of 2D material in the gate width direction, wherein the substantially planar upper surface and the substantially planar bottom surface of the layer of 2D material are positioned approximately parallel to a substantially planar surface of the semiconductor substrate.

公开(公告)号：US20230037420A1

公开(公告)日：2023-02-09

申请号：US17386062

申请日：2021-07-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Johnatan A. Kantarovsky ,  Mark D. Levy ,  Brett T. Cucci ,  Jeonghyun Hwang ,  Siva P. Adusumilli

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The structure includes: a gate structure comprising a horizontal portion and a substantially vertical stem portion; and an air gap surrounding the substantially vertical stem portion and having a curved surface under the horizontal portion.

公开(公告)号：US11574867B2

公开(公告)日：2023-02-07

申请号：US17104078

申请日：2020-11-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ephrem G. Gebreselasie ,  Vibhor Jain ,  Yves T. Ngu ,  Johnatan A. Kantarovsky ,  Alain F. Loiseau

IPC: H01L23/52 ,  H01L23/525 ,  H01L21/8249 ,  H01L21/02 ,  H01L27/07 ,  H01L23/62 ,  H01L27/115 ,  H01L27/112 ,  H01L27/02

Abstract: An electrical fuse (e-fuse) includes a fuse link including a silicided semiconductor layer over a dielectric layer covering a gate conductor. The silicided semiconductor layer is non-planar and extends orthogonally over the gate conductor. A first terminal is electrically coupled to a first end of the fuse link, and a second terminal is electrically coupled to a second end of the fuse link. The fuse link may be formed in the same layer as an intrinsic and/or extrinsic base of a bipolar transistor. The gate conductor may control a current source for programming the e-fuse. The e-fuse reduces the footprint and the required programming energy compared to conventional e-fuses.

公开(公告)号：US11569170B2

公开(公告)日：2023-01-31

申请号：US17064602

申请日：2020-10-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Siva P. Adusumilli ,  Mark David Levy ,  Ramsey Hazbun ,  Alvin Joseph ,  Steven Bentley

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/768 ,  H01L23/367 ,  H01L23/48 ,  H01L29/10 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/778 ,  H01L29/735

Abstract: A semiconductor device is provided, the semiconductor device comprising a substrate having merged cavities in the substrate. An active region is over the merged cavities in the substrate. A thermally conductive layer is in the merged cavities in the substrate, whereby the thermally conductive layer at least partially fills up the merged cavities in the substrate. A first contact pillar connects the thermally conductive layer in the merged cavities in the substrate with a metallization layer above the active region.

公开(公告)号：US11569108B2

公开(公告)日：2023-01-31

申请号：US16901099

申请日：2020-06-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michael Raga-Barone

IPC: H01L21/673 ,  G03F7/20

Abstract: An illustrative device disclosed herein includes a plate and a reticle pod receiving structure on the front surface of the plate that at least partially bounds a reticle pod receiving area on the front surface. In this example, the back surface of the plate has a pin engagement structure that is adapted to engage a plurality of pins and a fluid flow channel that is adapted to allow fluid communication with an interior region of a reticle pod when the reticle pod is positioned in the reticle pod receiving area.

公开(公告)号：US11567277B1

公开(公告)日：2023-01-31

申请号：US17472846

申请日：2021-09-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Mark Levy ,  Siva P. Adusumilli

IPC: G02B6/43 ,  G02B6/42

Abstract: Structures that include a distributed Bragg reflector and methods of fabricating a structure that includes a distributed Bragg reflector. The structure includes a substrate, an optical component, and a distributed Bragg reflector positioned between the optical component and the substrate. The distributed Bragg reflector includes airgaps and silicon layers that alternate in a vertical direction with the airgaps to define a plurality of periods.

公开(公告)号：US11567260B1

公开(公告)日：2023-01-31

申请号：US17501508

申请日：2021-10-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Won Suk Lee ,  Lin Jiang ,  Colleen Meagher

IPC: G02B6/122 ,  G02B6/36 ,  H01L31/0232

Abstract: Structures including an optical component and methods of forming a structure including an optical component. The structure includes an optical component on a substrate, and a back-end-of-line stack including multiple metal levels. Each of the metal levels includes a dielectric layer and metal features positioned over the optical component as metal fill in the dielectric layer. The metal features in at least two of the metal levels are arranged to overlap such that the optical component is fully covered normal to the substrate.

公开(公告)号：US20230014455A1

公开(公告)日：2023-01-19

申请号：US17375166

申请日：2021-07-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hemant M. Dixit ,  Vinayak Bharat Naik ,  Kazutaka Yamane ,  Eng Huat Toh

IPC: G01R33/09 ,  G01R33/00

Abstract: A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

公开(公告)号：US20230011972A1

公开(公告)日：2023-01-12

申请号：US17931933

申请日：2022-09-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/20 ,  H01S5/30 ,  H01S5/223

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11550100B2

公开(公告)日：2023-01-10

申请号：US17202729

申请日：2021-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc. ,  KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Yusheng Bian ,  Michal Rakowski ,  Roderick A. Augur ,  Marios Papadovasilakis ,  Sujith Chandran ,  Jaime Viegas ,  Yonas Gebregiorgis

IPC: G02B6/10 ,  G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/125 ,  G02B6/13 ,  G02B6/122

Abstract: Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. A waveguide core of the wavelength-division multiplexing filter includes a first bend having a first curvature and a second bend having a second curvature different than the first curvature. The structure further includes a waveguide core region having a first end surface, a second end surface, and a bend arranged between the first and second end surfaces. The bend is positioned over the first bend of the waveguide core in an overlapping relationship.