公开(公告)号：US07164475B2

公开(公告)日：2007-01-16

申请号：US10983078

申请日：2004-11-04

Applicant: Christopher R Fairley ,  Tao-Yi Fu ,  Gershon Perelman ,  Bin-Ming Benjamin Tsai

Inventor： Christopher R Fairley ,  Tao-Yi Fu ,  Gershon Perelman ,  Bin-Ming Benjamin Tsai

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N21/95607 ,  G01N21/95623 ,  G01N2021/8825

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

Abstract translation: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调高度的激光束提供垂直角度可调性通过修改柱面透镜位置​​来补偿角镜反射镜的变化，通过平移可调镜，将照明点定位到传感器视场内，旋转并随后移动柱面透镜 。 系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。

公开(公告)号：US20060274310A1

公开(公告)日：2006-12-07

申请号：US11325872

申请日：2006-01-04

Applicant: Daniel Kandel ,  Kenneth Gross ,  Michael Friedmann ,  Jiyou Fu ,  Shankar Krishnan ,  Boris Golovanevsky

Inventor： Daniel Kandel ,  Kenneth Gross ,  Michael Friedmann ,  Jiyou Fu ,  Shankar Krishnan ,  Boris Golovanevsky

IPC: G01J4/00

CPC classification number: G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70633

Abstract: Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a ID grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer. Another optional embodiment uses an analyzing prism to simultaneously collect two polarization components of reflected light.

Abstract translation: 公开了使用椭偏仪配置来测量可能是各向同性或各向异性的系统的部分Mueller矩阵和完整琼斯矩阵的系统和方法。 在一个实施例中，不一定满足任何对称假设的两个或更多个信号被组合成满足对称假设的复合信号。 各个信号以两个或多个分析器角度收集。 复合信号的对称属性允许容易地提取用于入射光束相对于ID光栅目标的任何相对取向以及包括通用2D光栅的目标的覆盖信息。 具有某种对称性质的信号也可以以非常有效的方式测量轮廓不对称。 在另一个实施例中，测量方法被定义为仅测量满足对称假设的信号。 可选实施例包括用作偏振器和分析器的单个偏振元件。 另一个可选实施例使用分析棱镜来同时收集反射光的两个偏振分量。

公开(公告)号：US07136159B2

公开(公告)日：2006-11-14

申请号：US10096318

申请日：2002-03-12

Applicant: Bin-Ming Benjamin Tsai ,  Yung-Ho Chuang ,  J. Joseph Armstrong ,  David Lee Brown

Inventor： Bin-Ming Benjamin Tsai ,  Yung-Ho Chuang ,  J. Joseph Armstrong ,  David Lee Brown

IPC: G01N21/00

CPC classification number: G02B17/0808 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/479 ,  G01N2021/8825 ,  G01N2021/95676 ,  G01N2201/06113 ,  G02B17/0856 ,  G02B17/0892 ,  G02B21/04 ,  G03F7/70225

Abstract: A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.

Abstract translation: 一种用于检查诸如半导体晶片的样本的系统和方法，包括使用来自所述源的至少一个相对较强的波长的准分子源照射所述样本的至少一部分，检测从所述被照射部分接收的辐射， 分析检测到的辐射对于存在于样品部分中的潜在缺陷。

公开(公告)号：US07113284B1

公开(公告)日：2006-09-26

申请号：US10890774

申请日：2004-07-13

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/84

CPC classification number: G01B11/0616 ,  H01L22/12

Abstract: Embodiments of a material independent optical profilometer are described. In some embodiments, a system comprises a first source of electromagnetic signals, a beam splitter, first and second retroreflection units, first and second detectors, and a processor that receives signals reflected from an object and generates a material independent signal.

Abstract translation: 描述了材料无关的光学轮廓仪的实施例。 在一些实施例中，系统包括第一电磁信号源，分束器，第一和第二回射单元，第一和第二检测器以及接收从物体反射的信号并产生材料无关信号的处理器。

公开(公告)号：US07099005B1

公开(公告)日：2006-08-29

申请号：US09671715

申请日：2000-09-27

Applicant: Anatoly Fabrikant ,  Guoheng Zhao ,  Daniel C. Wack ,  Mehrdad Nikoonahad

Inventor： Anatoly Fabrikant ,  Guoheng Zhao ,  Daniel C. Wack ,  Mehrdad Nikoonahad

IPC: G01J4/00

CPC classification number: G01N21/45 ,  G01N21/21 ,  G01N21/4788 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2021/217 ,  G01N2021/8416 ,  G02B5/18

Abstract: Instead of constructing a full multi-dimensional look up table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

Abstract translation: 而不是构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数，而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题，然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解，以产生三维光栅的衍射效率。 然后，该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

公开(公告)号：US07091486B1

公开(公告)日：2006-08-15

申请号：US10938841

申请日：2004-09-09

Applicant: Mark A. McCord ,  Alan D. Brodie

Inventor： Mark A. McCord ,  Alan D. Brodie

IPC: G01N23/00 ,  G21K7/00

CPC classification number: G01N23/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/24 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3174

Abstract: One embodiment disclosed relates to an electron beam imaging apparatus. An electron source is configured to generate an electron beam, and a beam-limiting aperture is configured to block a portion of the electron beam and to allow transmission of another portion of the electron beam through the aperture. A first detector is configured to detect scattered electrons emitted by the aperture due to the blocked portion of the electron beam. The imaging apparatus may also include a second detector configured to detect scattered electrons emitted by the sample due to impingement of the transmitted portion of the electron beam. A gain control device may also be included to adjust a gain of a detected signal derived from the second detector using a control signal derived from the first detector. Another embodiment disclosed relates to an electron beam lithography apparatus. The lithography apparatus may adjust a pixel dwell time based on a control signal derived from the scattered electrons emitted by the aperture.

Abstract translation: 公开的一个实施例涉及一种电子束成像装置。 电子源被配置为产生电子束，并且束限制孔被配置为阻挡电子束的一部分并且允许电子束的另一部分通过孔传播。 第一检测器被配置为检测由于电子束的阻挡部分而由孔发射的散射电子。 成像装置还可以包括第二检测器，其被配置为检测由于电子束的透射部分的撞击而由样品发射的散射电子。 还可以包括增益控制装置，以使用从第一检测器导出的控制信号来调整从第二检测器导出的检测信号的增益。 所公开的另一实施例涉及电子束光刻设备。 光刻设备可以基于从孔径发射的散射电子得到的控制信号来调整像素驻留时间。

公开(公告)号：US07078689B1

公开(公告)日：2006-07-18

申请号：US11016074

申请日：2004-12-17

Applicant: David L. Adler ,  Mehran Nasser-Ghodsi

Inventor： David L. Adler ,  Mehran Nasser-Ghodsi

IPC: H01J37/30 ,  H01L21/66

CPC classification number: H01J37/185 ,  H01J2237/022 ,  H01J2237/2817 ,  H01L21/02057 ,  H01L21/67213

Abstract: One embodiment disclosed relates to an integrated electron beam inspection and contaminant removal tool. An electron beam column is configured to image an area on a substrate being inspected. A contaminant removal subsystem is integrated with the electron beam column and configured to remove contamination from a surface of the substrate. Means is advantageously included by which the substrate is kept from being exposed to air between the contaminant removal subsystem and the electron beam column.

Abstract translation: 所公开的一个实施例涉及一体化电子束检查和污染物去除工具。 电子束列被配置成对被检查的基板上的区域进行成像。 污染物去除子系统与电子束柱一体化并且被配置为去除基底表面的污染物。 有利地包括装置，通过该装置，基板被保持不被暴露于污染物去除子系统和电子束柱之间的空气。

公开(公告)号：US07076390B1

公开(公告)日：2006-07-11

申请号：US10967397

申请日：2004-10-18

Applicant: Krishnamurthy Bhaskar ,  Mark J. Roulo ,  John S. Taylor ,  Lawrence R. Miller ,  Paul T. Russell ,  Jason Z. Lin ,  Eliezer Rosengaus ,  Richard M. Wallingford ,  Kishore Bubna

Inventor： Krishnamurthy Bhaskar ,  Mark J. Roulo ,  John S. Taylor ,  Lawrence R. Miller ,  Paul T. Russell ,  Jason Z. Lin ,  Eliezer Rosengaus ,  Richard M. Wallingford ,  Kishore Bubna

IPC: G06F15/00

CPC classification number: G01N21/95607 ,  G06T7/0004

Abstract: An inspection system for detecting anomalies on a substrate. A first network is coupled to a sensor array and communicates data. Process nodes are coupled to the first network, and process the data to produce reports. Each process node includes memory sufficient to buffer the data until it can process the data. Each process node has an interface card that formats the data for a high speed interface bus that is coupled to the interface card. A computer receives and processes the data to produce the report. A second network receives the reports. A job manager is coupled to the second network, receives the reports, and sends information to the process nodes to coordinate processing of the data.

Abstract translation: 用于检测基板上的异常的检查系统。 第一网络耦合到传感器阵列并传送数据。 过程节点耦合到第一个网络，并处理数据以生成报告。 每个进程节点包括足以缓冲数据的内存，直到它能够处理数据。 每个进程节点都有一个接口卡，格式化耦合到接口卡的高速接口总线的数据。 计算机接收并处理数据以生成报告。 第二个网络接收报告。 作业管理器耦合到第二网络，接收报告，并将信息发送到处理节点以协调数据的处理。

公开(公告)号：US07072786B2

公开(公告)日：2006-07-04

申请号：US11238357

申请日：2005-09-28

Applicant: David Bruce Coldren ,  Prashant A. Aji ,  David Winslow Randall ,  Sharon Marie McCauley

Inventor： David Bruce Coldren ,  Prashant A. Aji ,  David Winslow Randall ,  Sharon Marie McCauley

IPC: G06F19/00 ,  G06K9/00

CPC classification number: G05B19/41875 ,  G05B2219/32197 ,  G05B2219/45031 ,  H01L21/67276 ,  Y02P90/20 ,  Y02P90/22

Abstract: Techniques for efficiently setting up inspection, metrology, and review systems for operating upon semiconductor wafers are described. Specifically, this involves setting up recipes that allows each system to accurately inspect semiconductor wafers. The invention gathers pertinent information from these tools and presents the information to users in a way that greatly reduces the time required to complete a recipe. One system embodiment includes an inspection system and a review station that is communicatively linked such that the review station can read from and write to an entire set of data stored at the inspection system. The set of data includes image files of features detected by the inspection system.

Abstract translation: 描述了用于有效地设置用于在半导体晶片上操作的检查，计量和审查系统的技术。 具体来说，这涉及设置允许每个系统准确检查半导体晶片的配方。 本发明从这些工具收集相关信息，并以大大减少完成配方所需时间的方式向用户提供信息。 一个系统实施例包括检查系统和通信链接的检查站，使得检查站可以读取和写入存储在检查系统中的整个数据集合。 该组数据包括由检查系统检测到的特征的图像文件。

公开(公告)号：US07061601B2

公开(公告)日：2006-06-13

申请号：US10754275

申请日：2004-01-08

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/00

CPC classification number: G01N21/9506 ,  G01B11/0616 ,  G01B11/0641 ,  G01B11/065 ,  G01B11/303 ,  G01B11/306 ,  G01N21/21 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/958 ,  G01N2021/8427 ,  G01N2021/8841 ,  G01N2201/103 ,  G01N2201/104 ,  G01N2201/1045 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A double-sided optical inspection system is presented which may detect and classify particles, pits and scratches on thin film disks or wafers in a single scan of the surface. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction on both surfaces of the wafer or thin film disk. The scattered light from radial and circumferential beams is separated via their polarization or by the use of a dichroic mirror together with two different laser wavelengths.

Abstract translation: 提出了一种双面光学检测系统，其可以在表面的单次扫描中检测和分类薄膜盘或晶片上的颗粒，凹坑和划痕。 在一个实施例中，本发明使用一对正交取向的激光束，一个在径向上，一个在圆周方向上在晶片或薄膜盘的两个表面上。 来自径向和周向光束的散射光通过其偏振分离，或者通过使用二向色镜与两种不同的激光波长分离。