Memory component having internal read-modify-write operation

    公开(公告)号:US11347441B2

    公开(公告)日:2022-05-31

    申请号:US17247167

    申请日:2020-12-02

    Applicant: Rambus Inc.

    Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

    Offset calibration for successive approximation register analog to digital converter

    公开(公告)号:US11342929B2

    公开(公告)日:2022-05-24

    申请号:US17262901

    申请日:2019-07-30

    Applicant: Rambus Inc.

    Abstract: Disclosed is a successive approximation register (SAR) analog to digital converter (ADC) that uses two or more comparators. This allows the output of one comparator to be latched while the other comparators are comparing and switching. Statistical measures are used to correct the offsets of one or more of the comparators. If a statistically significant mismatch in the number of 1's and 0's occurs in a subset of the bits, adjustments to the offsets of one or more of the comparators are made until there is roughly an equal number of 1 and 0 values. This can reduce or eliminate the need for dedicated offset correction cycles.

    Optimizing power in a memory device
    184.
    发明授权

    公开(公告)号:US11340686B2

    公开(公告)日:2022-05-24

    申请号:US16947973

    申请日:2020-08-26

    Applicant: Rambus Inc.

    Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

    LOCAL INTERNAL DISCOVERY AND CONFIGURATION OF INDIVIDUALLY SELECTED AND JOINTLY SELECTED DEVICES

    公开(公告)号:US20220156207A1

    公开(公告)日:2022-05-19

    申请号:US17534125

    申请日:2021-11-23

    Applicant: Rambus Inc.

    Abstract: A memory controller interfaces with one or more memory devices having configurable width data buses and configurable connectivity between data pins of the memory devices and data pins of the memory controller. Upon initialization of the memory devices, the memory controller automatically discovers the connectivity configuration of the one or more memory devices, including both individually selected and jointly selected devices. After discovering connectivity of the connected devices, the memory controller configures the memory devices according to the discovered connectivity and assigns unique addresses to jointly selected devices.

    Error remapping
    187.
    发明授权

    公开(公告)号:US11335430B2

    公开(公告)日:2022-05-17

    申请号:US16823908

    申请日:2020-03-19

    Applicant: Rambus Inc.

    Abstract: Many error correction schemes fail to correct for double-bit errors and a module must be replaced when these double-bit errors occur repeatedly at the same address. This helps prevent data corruption. In an embodiment, the addresses for one of the memory devices exhibiting a single-bit error (but not the other also exhibiting a single bit error) is transformed before the internal memory arrays are accessed. This has the effect of moving one of the error prone memory cells to a different external (to the module) address such that there is only one error prone bit that is accessed by the previously double-bit error prone address. Thus, a double-bit error at the original address is remapped into two correctable single-bit errors that are at different addresses.

    On-Die Termination
    189.
    发明申请

    公开(公告)号:US20220140828A1

    公开(公告)日:2022-05-05

    申请号:US17527511

    申请日:2021-11-16

    Applicant: Rambus Inc.

    Inventor: Ian Shaeffer

    Abstract: Local on-die termination controllers for effecting termination of a high-speed signaling links simultaneously engage on-die termination structures within multiple integrated-circuit memory devices disposed on the same memory module, and/or within the same integrated-circuit package, and coupled to the high-speed signaling link. A termination control bus is coupled to memory devices on a module, and provides for peer-to-peer communication of termination control signals.

    Area-efficient, width-adjustable signaling interface

    公开(公告)号:US11302367B2

    公开(公告)日:2022-04-12

    申请号:US16148984

    申请日:2018-10-01

    Applicant: Rambus Inc.

    Abstract: A lateral transfer path within an adjustable-width signaling interface of an integrated circuit component is formed by a chain of logic segments that may be intercoupled in different groups to effect the lateral data transfer required in different interface width configurations, avoiding the need for a dedicated transfer path per width configuration and thereby substantially reducing number of interconnects (and thus the area) required to implement the lateral transfer structure.

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