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公开(公告)号：US4788416A
公开(公告)日：1988-11-29
申请号：US20278
申请日：1987-03-02
申请人： J. B. Price , Richard S. Rosler
发明人： J. B. Price , Richard S. Rosler
IPC分类号： H01L21/66 , G01K1/14 , H01L21/205 , H01L21/31 , H05B1/02
CPC分类号： G01K1/143
摘要： The temperature of a wafer in a vacuum chamber is measured by way of a tube, containing a thermocouple, extending through a wall of the chamber. The tube is sealed at one end to an aperture in the wall of the system and sealed at the other end with removable sealant.
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公开(公告)号：US4777061A
公开(公告)日：1988-10-11
申请号：US132739
申请日：1987-12-14
申请人： Schyi-yi Wu , J. B. Price , John Mendonca , Yu Chang Chow
发明人： Schyi-yi Wu , J. B. Price , John Mendonca , Yu Chang Chow
CPC分类号： C23C16/14
摘要： A process is disclosed for depositing tungsten non-selectively on conductors and dielectrics without the use of an adhesive interlayer. The process comprises an argon pre-treatment followed by low power plasma deposition to nucleate the tungsten. A thick, adherent layer of tungsten is then deposited.
摘要翻译： 公开了一种在不使用粘合剂中间层的情况下在导体和电介质上非选择性地沉积钨的方法。 该方法包括氩预处理，随后进行低功率等离子体沉积以使钨成核。 然后沉积厚的粘附层钨。
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公开(公告)号：US4692343A
公开(公告)日：1987-09-08
申请号：US861793
申请日：1986-05-12
申请人： J. B. Price , Schyi-Yi Wu
发明人： J. B. Price , Schyi-Yi Wu
CPC分类号： C23C16/481
摘要： Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
摘要翻译： 在具有用于辐射加热晶片的多个灯的等离子体反应器中获得在半导体晶片上的化学气相沉积。 使用远离晶片的校准温度感测装置来控制晶片的加热。 气体通过从腔室的侧面径向向内延伸的多个管道供给。 提供挡板以形成有助于沉积的均匀性的前室。 等离子体点火少于整个沉积循环以沉积二硅化钨。
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公开(公告)号：US4640224A
公开(公告)日：1987-02-03
申请号：US762355
申请日：1985-08-05
申请人： Matthew L. Bunch , J. B. Price , Robert W. Stitz
发明人： Matthew L. Bunch , J. B. Price , Robert W. Stitz
IPC分类号： C23C16/50 , C23C16/48 , C23C16/509 , C23C13/04
CPC分类号： C23C16/5096 , C23C16/481
摘要： Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
摘要翻译： 在具有用于辐射加热晶片的多个灯的等离子体反应器中获得在半导体晶片上的化学气相沉积。 使用远离晶片的校准温度感测装置来控制晶片的加热。 气体通过从腔室的侧面径向向内延伸的多个管道供给。 提供挡板以形成有助于沉积的均匀性的前室。 等离子体点火少于整个沉积循环以沉积二硅化钨。
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公开(公告)号：US6083561A
公开(公告)日：2000-07-04
申请号：US18969
申请日：1998-02-05
CPC分类号： C23C14/58 , C23C14/0005 , C23C14/0026 , C23C14/0629 , C23C16/01 , C23C16/306
摘要： An improved chemical vapor deposition (CVD) process which is capable of providing low-scatter water-clear zinc sulfide bulk material is described. The improved method also minimizes bowing, or induced curvature, in the product bulk material. The product zinc sulfide material can be processed into thicker windows and optical devices than was possible with the articles produced by the previous CVD process. The improved process provides for a controlled gradual initial ramping up of the deposition rate and a controlled initial ramping down of the substrate temperature.
摘要翻译： 描述了能够提供低散射水清净的硫化锌散装材料的改进的化学气相沉积（CVD）工艺。 改进的方法还使产品散装材料中的弯曲或诱导曲率最小化。 产品硫化锌材料可以加工成比通过先前的CVD工艺制造的制品可能更厚的窗户和光学装置。 改进的方法提供了控制的逐渐初始的沉积速率的升高和衬底温度的受控的初始斜坡下降。
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公开(公告)号：US5476549A
公开(公告)日：1995-12-19
申请号：US393770
申请日：1995-02-24
IPC分类号： C23C16/02 , C23C16/30 , C23C16/458 , C23C16/00
CPC分类号： C23C16/306 , C23C16/0254 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
摘要翻译： 当硫化锌通过化学气相沉积工艺沉积在平坦的衬底上时，由于双金属效应，将硒化锌衬底的表面研磨成与发生相反的方向的曲线。 当在沉积之前衬底的表面平坦时，在热层压体冷却时发生的界面弯曲由预先弯曲的弯曲补偿。 本发明提供了用于传输红外辐射的无失真窗口。
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17.发明授权Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique 失效通过化学气相沉积技术生产ZNS和ZNSE圆顶的方法
公开(公告)号：US5453233A
公开(公告)日：1995-09-26
申请号：US42942
申请日：1993-04-05
IPC分类号： C23C16/44 , C23C16/01 , C23C16/458 , C23C16/00
CPC分类号： C23C16/458 , C23C16/01
摘要： A method and device are provided for reducing the loss of CVD manufactured parts due to cracking caused by mechanical stresses resulting from the mismatch of the coefficient of thermal expansion between the chemical vapor deposed part and the mandrel plate. The method and device provide a removable mandrel support which is removed after the chemical vapor deposition but prior to the cooling of the CVD part and the mandrel plates. This permits the CVD part to contract upon cooling without mechanical restriction, thus reduce cracking caused by contraction of the CVD part against a mold which does not contract substantially.
摘要翻译： 提供了一种方法和装置，用于减少由于化学气相沉积部分和心轴板之间的热膨胀系数不匹配引起的机械应力引起的由于裂纹引起的CVD制造零件的损失。 该方法和装置提供了可移除的心轴支撑件，其在化学气相沉积之后但在CVD部件和心轴板的冷却之前被移除。 这允许CVD部件在没有机械限制的情况下在冷却时收缩，从而减少由CVD部件相对于基本不收缩的模具的收缩引起的开裂。
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公开(公告)号：US5147688A
公开(公告)日：1992-09-15
申请号：US639374
申请日：1991-01-11
申请人： Andreas A. Melas
发明人： Andreas A. Melas
IPC分类号： C23C16/40
CPC分类号： C23C16/407
摘要： Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.
摘要翻译： 公开了分别使用烷基铝合物或烷基铝合物和有机锡化合物前体在衬底上沉积氧化铟或铟/锡氧化物膜的金属有机化学气相沉积（MOCVD）工艺。
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公开(公告)号：US4749597A
公开(公告)日：1988-06-07
申请号：US109635
申请日：1987-10-19
申请人： John Mendonca , J. B. Price , Richard S. Rosler
发明人： John Mendonca , J. B. Price , Richard S. Rosler
IPC分类号： C23C16/02 , C23C16/56 , H01L21/285 , C23C16/08
CPC分类号： C23C16/56 , C23C16/0281 , H01L21/28568
摘要： A process is disclosed for reducing lateral encroachment and silicon consumption in LPCVD of tungsten. The process comprises a low temperature deposition of a thin layer of tungsten, followed by annealing in nitrogen at high temperature, follows by deposition of a thick layer of tungsten.
摘要翻译： 公开了一种减少钨的LPCVD中的横向侵蚀和硅消耗的方法。 该方法包括钨的薄层的低温沉积，然后在氮气中在高温下进行退火，随后沉积厚层的钨。
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公开(公告)号：US5686195A
公开(公告)日：1997-11-11
申请号：US378030
申请日：1995-01-24
CPC分类号： C23C16/0254 , C23C16/306 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
摘要翻译： 当硫化锌通过化学气相沉积工艺沉积在平坦的衬底上时，由于双金属效应，将硒化锌衬底的表面研磨成与发生相反的方向的曲线。 当在沉积之前衬底的表面平坦时，在热层压体冷却时发生的界面弯曲由预先弯曲的弯曲补偿。 本发明提供了用于传输红外辐射的无失真窗口。
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