公开(公告)号：US20250112061A1

公开(公告)日：2025-04-03

申请号：US18900014

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Senthil Arasu Subas Chandra Bose

IPC: H01L21/67

Abstract: Substrate processing systems and methods have expanded substrate processing capabilities. For such systems, substrate handling chamber bodies of different styles and for different areas of the substrate processing system may be formed using a standard substrate handling chamber precursor. Such substrate handling chamber precursors may include an exterior shape most of which can be used for two (or more) different styles of substrate handling chamber bodies. During milling, the standard precursors can be milled in different ways and by removing different amounts of material to form substrate handling chamber bodies having different numbers of facets, with different shapes, and for different locations in a substrate processing system.

公开(公告)号：US20250112057A1

公开(公告)日：2025-04-03

申请号：US18898455

申请日：2024-09-26

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Daniele Piumi

IPC: H01L21/3213 ,  C09K13/08 ,  H01L21/67

Abstract: The present disclosure relates to methods for etching a molybdenum (Mo) film and systems for performing said method. The disclosed methods comprise, exposing a substrate comprising an Mo outer layer to an oxygen containing reactant to convert at least a portion of the Mo outer layer to molybdenum oxide (MoOx), then exposing the substrate to an etchant that comprises one or more S—X bond(s), P—X bond(s), and Si—X bond(s), where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo containing compound that is removed from the surface of the substrate, thereby reducing the thickness of the Mo outer layer.

公开(公告)号：US20250110411A1

公开(公告)日：2025-04-03

申请号：US18900231

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Kishan Ashokbhai Patel ,  Ikhlas Rahmat ,  Yoann Tomczak ,  David Kurt de Roest

IPC: G03F7/00 ,  C23C16/24 ,  C23C16/455 ,  G03F7/16 ,  H01L21/033

Abstract: A method for forming a pattern on a substrate disclosed. The method comprising, providing an Extreme Ultraviolet (EUV) lithography system having an exposure chamber, providing a substrate to the exposure chamber, the substrate comprising a patternable layer, the patternable layer comprising a photosensitive surface termination; and exposing the substrate to EUV radiation while exposing the patternable layer to a reactive gas, thereby forming a pattern on the patternable layer, comprising exposed areas and unexposed areas, the unexposed areas comprising the photosensitive surface termination and the exposed areas comprising an altered surface termination.

公开(公告)号：US20250109492A1

公开(公告)日：2025-04-03

申请号：US18900427

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Michael Eugene Givens ,  Giuseppe Alessio Verni

IPC: C23C16/30 ,  C23C16/44

Abstract: A method, system and apparatus are disclosed for depositing a threshold voltage shifting layer comprising an oxygen-free metal sulfide on a substrate, wherein the depositing further comprises, providing a substrate having a surface within a reaction chamber, a) providing an oxygen-free precursor comprising a metal to the reaction chamber to contact the surface, b) providing an oxygen-free, sulfur-containing reactant to the reaction chamber to contact the surface, c) purging the reaction chamber and repeating operations a), b) or c) or any combination thereof until the threshold voltage shifting layer of a predetermined thickness is deposited on the surface.

公开(公告)号：US20250105012A1

公开(公告)日：2025-03-27

申请号：US18896482

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Giueseppe Alessio Verni ,  Petro Deminskyi ,  Balaji Kannan ,  Eric Jen cheng Liu ,  Fu Tang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/28

Abstract: Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.

公开(公告)号：US20250101589A1

公开(公告)日：2025-03-27

申请号：US18895795

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G.M. Oosterlaken

IPC: C23C16/455 ,  C23C16/458

Abstract: A gas injector and an apparatus constructed and arranged to process a plurality of substrates in a process chamber with such a gas injector may be disclosed. The gas injector may be used to provide a process gas into the process chamber. The gas injector may have a primary conduit elongated along a main axis and a feed end at one end constructed and arranged to connect to a process gas line of the apparatus. There may be provided a plurality of secondary conduits connected with their first end to the primary conduit substantially perpendicular to the main axis of the primary conduit and being provided with a gas exhaust opening at a second end of the secondary conduit to provide the process gas into the process chamber.

公开(公告)号：US20250092566A1

公开(公告)日：2025-03-20

申请号：US18966261

申请日：2024-12-03

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B25/14 ,  C30B25/08 ,  C30B25/16 ,  C30B25/18 ,  H01L21/67

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US20250092513A1

公开(公告)日：2025-03-20

申请号：US18970001

申请日：2024-12-05

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20250087478A1

公开(公告)日：2025-03-13

申请号：US18883125

申请日：2024-09-12

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah

IPC: H01L21/02

Abstract: Methods for forming a metal silicate layer for controlling a threshold voltage of metal-oxide semiconductor field effect transistor (MOSFET) are disclosed. The methods include forming a metal silicate threshold adjusting layer on a substrate by contacting the substrate with a precursor comprising an organosilanol precursor or a siloxide precursor.

公开(公告)号：US12247286B2

公开(公告)日：2025-03-11

申请号：US16983364

申请日：2020-08-03

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: F28F7/00 ,  C23C16/455 ,  C23C16/52

Abstract: A cooling apparatus and methods for maintaining a precursor source vessel heater at a desired temperature are disclosed. The apparatus and methods can be used to maintain a desired temperature gradient within the precursor source vessel for improved integrity of the precursor source before delivery of the precursor to a reaction chamber. The apparatus and methods can also be used for rapid cooling of a source vessel for maintenance.