公开(公告)号：US07659184B2

公开(公告)日：2010-02-09

申请号：US12072495

申请日：2008-02-25

Applicant: Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/20

CPC classification number: H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

Abstract: In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

Abstract translation: 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20090280628A1

公开(公告)日：2009-11-12

申请号：US12503697

申请日：2009-07-15

Applicant: Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/26

CPC classification number: H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

Abstract: In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

Abstract translation: 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20080188090A1

公开(公告)日：2008-08-07

申请号：US11670701

申请日：2007-02-02

Applicant: Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/31 ,  C23C16/452

CPC classification number: C23C16/507 ,  H01J37/321

Abstract: A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

公开(公告)号：US07399707B2

公开(公告)日：2008-07-15

申请号：US11036632

申请日：2005-01-13

Applicant: Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

Inventor： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC: H01L21/302

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

Abstract translation: 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

公开(公告)号：US06418874B1

公开(公告)日：2002-07-16

申请号：US09584167

申请日：2000-05-25

Applicant: Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

Inventor： Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

IPC: C23C1600

CPC classification number: H01J37/32009 ,  H01J37/321

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract translation: 衬底处理室（10）内的环形等离子体源（28）。 环形等离子体源形成具有θ对称性的极向等离子体。 极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。 等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。 在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

公开(公告)号：US5835335A

公开(公告)日：1998-11-10

申请号：US824104

申请日：1997-03-26

Applicant: Charles P. Ross ,  Canfeng Lai

Inventor： Charles P. Ross ,  Canfeng Lai

IPC: B25J15/06 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

Abstract: A method of providing unbalanced voltages to a bipolar electrostatic chuck of a substrate processing chamber. The method includes providing a variable balanced voltage power supply, which is configured for producing, responsive to a control signal, balanced differential output voltages on a first and second terminals of the variable balanced voltage power supply. The method further includes coupling the first terminal of the variable balanced voltage power supply to a first node. The first node is coupled to a first resistive element of a resistor bridge. The method also includes coupling the second terminal of the variable balanced voltage power supply to a second node. The second node is coupled to a second resistive element of the resistor bridge. The first resistive element is lower in resistance value than the second resistive element. There is further included coupling the first resistive element and the second resistive element to a common reference terminal, thereby producing, without employing a power supply other than the variable balanced voltage power supply, the unbalanced voltages at the first node and the second node when the variable balanced voltage power supply is turned on.

Abstract translation: 向基板处理室的双极静电卡盘提供不平衡电压的方法。 该方法包括提供可变平衡电压电源，其被配置为响应于控制信号来产生可变平衡电压电源的第一和第二端上的平衡差分输出电压。 该方法还包括将可变平衡电压电源的第一端耦合到第一节点。 第一节点耦合到电阻器桥的第一电阻元件。 该方法还包括将可变平衡电压电源的第二端耦合到第二节点。 第二节点耦合到电阻器桥的第二电阻元件。 第一电阻元件的电阻值比第二电阻元件低。 还包括将第一电阻元件和第二电阻元件耦合到公共参考端子，从而在不使用可变平衡电压电源的电源的情况下产生在第一节点和第二节点处的不平衡电压 可变平衡电压电源打开。

公开(公告)号：US08317970B2

公开(公告)日：2012-11-27

申请号：US12132133

申请日：2008-06-03

Applicant: Canfeng Lai ,  Lily L. Pang ,  Majeed A. Foad

Inventor： Canfeng Lai ,  Lily L. Pang ,  Majeed A. Foad

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/321 ,  H01J37/3244

Abstract: A gas distribution plate is formed of a metallic body having a bottom surface with plural gas disperser orifices and an internal gas manifold feeding the orifices. Each one of an array of discrete RF power applicators held in the plate includes (a) an insulating cylindrical housing extending through the plate, a portion of the housing extending outside of the plate through the bottom surface, and (b) a conductive solenoidal coil contained within the housing, a portion of the coil lying within the portion of the housing that extends outside of the plate through the bottom surface.

Abstract translation: 气体分配板由具有多个气体分散器孔的底面的金属体和供给该孔的内部气体歧管形成。 保持在板中的分立RF功率施加器阵列中的每一个包括（a）延伸穿过板的绝缘圆柱形壳体，壳体的通过底表面延伸到板外部的部分，以及（b）导电螺线管线圈 所述线圈包含在所述壳体内，所述线圈的一部分位于所述壳体的通过所述底表面延伸到所述板外部的部分中。

公开(公告)号：US20090215251A1

公开(公告)日：2009-08-27

申请号：US12072495

申请日：2008-02-25

Applicant: Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

Inventor： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC: H01L21/62 ,  G21K5/10

CPC classification number: H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

Abstract: In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

公开(公告)号：US07363876B2

公开(公告)日：2008-04-29

申请号：US10768607

申请日：2004-01-30

Applicant: Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

Inventor： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/3065

CPC classification number: H01J37/32431

Abstract: A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

Abstract translation: 使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。 在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。 在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。 所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

公开(公告)号：US20070037397A1

公开(公告)日：2007-02-15

申请号：US11202043

申请日：2005-08-11

Applicant: Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

Inventor： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

IPC: H01L21/302

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

Abstract: A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

Abstract translation: 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。