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    Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma
    1.
    发明授权
    Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma 有权
    具有处理气体分散器的天花板电极，其容纳延伸到等离子体中的多个感应RF功率施加器

    公开(公告)号：US08317970B2

    公开(公告)日：2012-11-27

    申请号：US12132133

    申请日：2008-06-03

    申请人： Canfeng Lai ,  Lily L. Pang ,  Majeed A. Foad

    发明人： Canfeng Lai ,  Lily L. Pang ,  Majeed A. Foad

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321 ,  H01J37/3244

    摘要： A gas distribution plate is formed of a metallic body having a bottom surface with plural gas disperser orifices and an internal gas manifold feeding the orifices. Each one of an array of discrete RF power applicators held in the plate includes (a) an insulating cylindrical housing extending through the plate, a portion of the housing extending outside of the plate through the bottom surface, and (b) a conductive solenoidal coil contained within the housing, a portion of the coil lying within the portion of the housing that extends outside of the plate through the bottom surface.

    摘要翻译： 气体分配板由具有多个气体分散器孔的底面的金属体和供给该孔的内部气体歧管形成。 保持在板中的分立RF功率施加器阵列中的每一个包括（a）延伸穿过板的绝缘圆柱形壳体，壳体的通过底表面延伸到板外部的部分，以及（b）导电螺线管线圈 所述线圈包含在所述壳体内，所述线圈的一部分位于所述壳体的通过所述底表面延伸到所述板外部的部分中。

    PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR
    2.
    发明申请
    PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR 有权
    等离子体沉淀离子植入与高分辨率的室温反应器的季铵盐过程

    公开(公告)号：US20080286982A1

    公开(公告)日：2008-11-20

    申请号：US11748783

    申请日：2007-05-15

    申请人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    发明人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    IPC分类号： H01L21/31

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

    摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

    摘要翻译： 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生穿过室的Si O 2 O 3种类的环形等离子体电流，以沉积Si的调味层 同时在没有晶片的情况下离开基座，以便露出基座的晶片支撑表面，同时在腔室内的表面上形成一个或多个x O 材料。

    Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
    3.
    发明授权
    Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor 有权
    用于环形源反应器的等离子体浸没离子注入与高度均匀的室调节过程

    公开(公告)号：US07691755B2

    公开(公告)日：2010-04-06

    申请号：US11748783

    申请日：2007-05-15

    申请人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    发明人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

    IPC分类号： H01L21/00 ,  H01L21/26

    CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

    摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

    摘要翻译： 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生通过该室的六十种物质的环形等离子体电流，以在室内的表面上沉积SixOy材料的调味层，同时离开基座而没有晶片，以便 露出基座的晶片支撑表面。

    SUBSTRATE TRANSFER MECHANISM WITH PREHEATING FEATURES
    6.
    发明申请
    SUBSTRATE TRANSFER MECHANISM WITH PREHEATING FEATURES 审中-公开
    具有预热功能的基板传输机构

    公开(公告)号：US20110064545A1

    公开(公告)日：2011-03-17

    申请号：US12882508

    申请日：2010-09-15

    申请人： TETSUYA ISHIKAWA ,  Lily L. Pang ,  Quyen D. Pham ,  Donald J.K. Olgado

    发明人： TETSUYA ISHIKAWA ,  Lily L. Pang ,  Quyen D. Pham ,  Donald J.K. Olgado

    IPC分类号： H01L21/677

    CPC分类号： H01L21/67196 ,  H01L21/67103 ,  H01L21/67742 ,  H01L21/68707

    摘要： Embodiments of the present invention provide apparatus and method for heating one or more substrates during transfer. One embodiment provides a robot blade assembly for supporting a substrate or a substrate carrier thereon. The robot blade assembly comprises a base plate, an induction heating assembly disposed on the base plate, and a top plate disposed above the induction heating assembly. Another embodiment provides an induction heating assembly disposed over a transfer chamber having a substrate transfer mechanism disposed therein.

    摘要翻译： 本发明的实施例提供了在传送期间加热一个或多个基板的装置和方法。 一个实施例提供了一种用于在其上支撑衬底或衬底载体的机器人刀片组件。 机器人刀片组件包括基板，设置在基板上的感应加热组件和设置在感应加热组件上方的顶板。 另一实施例提供一种设置在传送室上的感应加热组件，其具有设置在其中的衬底传送机构。

    Integrated bevel clean chamber
    10.
    发明授权
    Integrated bevel clean chamber 失效
    集成斜面清洁室

    公开(公告)号：US07520939B2

    公开(公告)日：2009-04-21

    申请号：US10826492

    申请日：2004-04-16

    申请人： Henry Ho ,  Lily L. Pang ,  Anh N. Nguyen ,  Alexander N. Lerner

    发明人： Henry Ho ,  Lily L. Pang ,  Anh N. Nguyen ,  Alexander N. Lerner

    IPC分类号： B08B3/00

    CPC分类号： H01L21/68 ,  B08B3/02 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6838

    摘要： A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness. The apparatus further includes a centering actuation mechanism in communication with the substrate centering posts, and a fluid dispensing arm pivotally connected to the cell body, the fluid dispensing arm being configured to dispense a processing fluid onto a first side of the substrate.

    摘要翻译： 一种用于清洁半导体衬底的斜面的方法和设备。 该装置通常包括具有直立壁的细胞体和流体排放盆，位于流体排放盆中心定位的可旋转真空吸盘，以及围绕可旋转真空吸盘以相等的径向增量定位的至少3个基体定心构件。 基板定心构件包括垂直定向的轴，其具有延伸穿过其中的纵向轴线;盖构件，其定位在所述轴的上终端上方;凸起中心部分形成在所述盖构件上，所述凸起中心部分在位置处具有最大厚度 与纵向轴线重合，以及定位在凸起中心部分的径向外侧的盖构件上的基板定心柱，该基板定心柱的上终端从盖构件延伸至超过最大厚度的距离。 所述装置还包括与所述基板定心柱连通的定心致动机构，以及可枢转地连接到所述电池体的流体分配臂，所述流体分配臂构造成将处理流体分配到所述基板的第一侧上。