公开(公告)号：US20130092898A1

公开(公告)日：2013-04-18

申请号：US13705342

申请日：2012-12-05

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L33/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

公开(公告)号：US08395179B2

公开(公告)日：2013-03-12

申请号：US12878978

申请日：2010-09-09

申请人： Eiji Muramoto

发明人： Eiji Muramoto

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting element includes a stacked body, a first and second electrode, a support substrate, a protective film and a dielectric film. The stacked body includes a first semiconductor, a second semiconductor layer and a light emitting portion. The first electrode is provided on a first major surface of the stacked body. The second electrode is provided on a second major surface of the stacked body. The support substrate is provided on the second major surface via a bonding metal. The protective film is provided on at least a side surface of the stacked body except the second major surface. The dielectric film is provided between the bonding metal and a region of the second major surface not provided with the second electrode, and between the bonding metal and a surface of the protective film on the second major surface side.

摘要翻译： 根据一个实施例，半导体发光元件包括层叠体，第一和第二电极，支撑衬底，保护膜和电介质膜。 层叠体包括第一半导体，第二半导体层和发光部。 第一电极设置在层叠体的第一主表面上。 第二电极设置在层叠体的第二主表面上。 支撑基板经由接合金属设置在第二主表面上。 除了第二主表面之外，保护膜设置在层叠体的至少一侧面上。 电介质膜设置在接合金属与未设置第二电极的第二主表面的区域之间以及在第二主表面侧的接合金属与保护膜的表面之间。

公开(公告)号：US20120056153A1

公开(公告)日：2012-03-08

申请号：US13035069

申请日：2011-02-25

申请人： Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

发明人： Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L29/20

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

摘要翻译： 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US20110220928A1

公开(公告)日：2011-09-15

申请号：US12878978

申请日：2010-09-09

申请人： Eiji MURAMOTO

发明人： Eiji MURAMOTO

IPC分类号： H01L33/40 ,  H01L33/46

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting element includes a stacked body, a first and second electrode, a support substrate, a protective film and a dielectric film. The stacked body includes a first semiconductor, a second semiconductor layer and a light emitting portion. The first electrode is provided on a first major surface of the stacked body. The second electrode is provided on a second major surface of the stacked body. The support substrate is provided on the second major surface via a bonding metal. The protective film is provided on at least a side surface of the stacked body except the second major surface. The dielectric film is provided between the bonding metal and a region of the second major surface not provided with the second electrode, and between the bonding metal and a surface of the protective film on the second major surface side.

摘要翻译： 根据一个实施例，半导体发光元件包括层叠体，第一和第二电极，支撑衬底，保护膜和电介质膜。 层叠体包括第一半导体，第二半导体层和发光部。 第一电极设置在层叠体的第一主表面上。 第二电极设置在层叠体的第二主表面上。 支撑基板经由接合金属设置在第二主表面上。 除了第二主表面之外，保护膜设置在层叠体的至少一侧面上。 电介质膜设置在接合金属与未设置第二电极的第二主表面的区域之间以及在第二主表面侧的接合金属与保护膜的表面之间。

公开(公告)号：US08456010B2

公开(公告)日：2013-06-04

申请号：US13035069

申请日：2011-02-25

申请人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

发明人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L23/482

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

摘要翻译： 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US20130126937A1

公开(公告)日：2013-05-23

申请号：US13718618

申请日：2012-12-18

申请人： EIJI MURAMOTO ,  Shinya Nunoue

发明人： EIJI MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/62

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

摘要翻译： 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。

公开(公告)号：US20130067572A1

公开(公告)日：2013-03-14

申请号：US13608741

申请日：2012-09-10

申请人： Eiji Muramoto

发明人： Eiji Muramoto

IPC分类号： G06F21/00

CPC分类号： H04L63/1408 ,  G06F21/552

摘要： The security event monitoring device includes: a storage module which stores in advance a correlation rule; a log collection unit which receives each log from each monitoring target device; a correlation analysis unit which generates scenario candidates by associating each of the logs; a scenario candidate evaluation unit which calculates the importance degrees of each scenario candidate; and a result display unit which displays/outputs the scenario candidate of a high importance degree. The scenario candidate evaluation unit includes: a user association degree evaluation function which calculates user association degrees; an operation association degree evaluation function which calculates the operation association degrees; and a scenario candidate importance reevaluation function which recalculates the importance degrees of each of the scenario candidates by each user according to the user association degrees and the operation association degrees.

摘要翻译： 安全事件监视装置包括：预先存储相关规则的存储模块; 日志收集单元，其从每个监视目标设备接收每个日志; 相关分析单元，其通过关联每个日志来生成场景候选; 计算每个情景候选的重要度的情景候选评估单元; 以及显示/输出高重要度的情景候选的结果显示单元。 场景候选评价单元包括：用户关联度评价函数，其计算用户关联度; 计算运算关联度的运算关联度评价函数; 以及场景候选重要性重新评估功能，其根据用户关联度和操作关联度重新计算每个用户的每个场景候选的重要度。

公开(公告)号：US20120012884A1

公开(公告)日：2012-01-19

申请号：US13165837

申请日：2011-06-22

申请人： Eiji MURAMOTO ,  Shinya NUNOUE

发明人： Eiji MURAMOTO ,  Shinya NUNOUE

IPC分类号： H01L33/62

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

公开(公告)号：US20120007047A1

公开(公告)日：2012-01-12

申请号：US13238818

申请日：2011-09-21

申请人： Eiji MURAMOTO ,  Shinya Nunoue

发明人： Eiji MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/36 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20110215364A1

公开(公告)日：2011-09-08

申请号：US12878967

申请日：2010-09-09

申请人： Yasuharu Sugawara ,  Yuko Kato ,  Eiji Muramoto

发明人： Yasuharu Sugawara ,  Yuko Kato ,  Eiji Muramoto

IPC分类号： H01L33/62 ,  H01L33/48

CPC分类号： H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.

摘要翻译： 根据一个实施例，半导体发光元件包括导电基板，接合部分，中间金属膜，第一电极，半导体层叠体和第二电极。 接合部设置在支撑基板上并且包括第一金属膜。 中间金属膜设置在接合部分上并且具有比第一金属膜更大的线性膨胀系数。 第一电极设置在中间金属膜上，并且包括具有比中间金属膜更大的线膨胀系数的第二金属膜。 半导体层叠体设置在第一电极上并且包括发光部。 第二电极设置在半导体层叠体上。