Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film
    13.
    发明授权
    Method of forming a ferroelectric film and fabrication process of a semiconductor device having a ferroelectric film 失效
    形成铁电体膜的方法和具有铁电体膜的半导体装置的制造方法

    公开(公告)号:US06790677B2

    公开(公告)日:2004-09-14

    申请号:US10338647

    申请日:2003-01-09

    申请人: Hideki Yamawaki

    发明人: Hideki Yamawaki

    IPC分类号: H01L2100

    摘要: A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and depositing a ferroelectric film on a surface of the layer by supplying gaseous sources of the ferroelectric film and an oxidizing gas and causing a decomposition of the gaseous sources at the surface of said layer, wherein the step of depositing the ferroelectric film is started with a preparation step in which the state of the surface of said layer is controlled substantially to a critical point in which the layer changes from the metal state to the oxide state and from the oxide state to the metal state.

    摘要翻译: 形成铁电体膜的方法包括以下步骤:通过在还原环境中具有金属状态并且在氧化环境中具有氧化态的材料形成层,并且通过提供气体源将铁电膜沉积在该层的表面上 的铁电体膜和氧化气体,并且在所述层的表面引起气态源的分解,其中沉积强电介质膜的步骤开始于制备步骤,其中所述层的表面的状态基本上被控制 到其中层从金属状态转变为氧化态,从氧化物状态转变为金属状态的临界点。