公开(公告)号：US07816716B2

公开(公告)日：2010-10-19

申请号：US11159097

申请日：2005-06-23

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L21/70 ,  H01L27/115

CPC classification number: H01L29/66742 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13 ,  H01L28/55 ,  H01L29/6684

Abstract: Source/drain diffusion layers and a channel region are formed in a polysilicon thin film formed on a substrate made of glass or the like, and furthermore, a gate electrode 6 is formed via a gate insulating film. A silicon hydronitride film is formed on the interlayer dielectric film, whereby the hydrogen concentration in an active element region including a switching thin film transistor can be maintained at a high level, and Si—H bonds in the silicon thin film become stable. In addition, by providing a ferroelectric film on the silicon hydronitride film via a lower electrode formed of a conductive oxide film, whereby the oxygen concentration of the ferroelectric capacitive element layer can be maintained at a high level, and generation of oxygen deficiency in the ferroelectric film is prevented.

Abstract translation: 源极/漏极扩散层和沟道区域形成在由玻璃等制成的衬底上形成的多晶硅薄膜中，此外，通过栅极绝缘膜形成栅电极6。 在层间电介质膜上形成氢氧氮化硅膜，能够将含有开关薄膜晶体管的有源元件区域的氢浓度维持在高水平，硅薄膜中的Si-H键稳定。 另外，通过在导电性氧化物膜上形成的下部电极在硅氢化硅膜上设置强电介质膜，能够将铁电电容元件层的氧浓度保持在高水平，并且产生铁电体中的缺氧 电影被阻止。

公开(公告)号：US20100202041A1

公开(公告)日：2010-08-12

申请号：US12665588

申请日：2008-06-13

Applicant: Hirotoshi Terada ,  Hiroshi Tanabe

Inventor： Hirotoshi Terada ,  Hiroshi Tanabe

IPC: G02B21/02

CPC classification number: G02B21/0016 ,  G01N21/9501 ,  G02B7/022 ,  G02B21/248 ,  G02B21/33

Abstract: When a semiconductor device 11 is observed, first, when it is detected that a solid immersion lens 6 comes into contact with the semiconductor device 11, the solid immersion lens 6 is caused to vibrate by a vibration generator unit. Next, a reflected light image from the solid immersion lens 6 is input to calculate a reflected light quantity m of the reflected light image, and it is judged whether a ratio (m/n) of the reflected light quantity m to an incident light quantity n is not greater than a threshold value A. When the ratio (m/n) is greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is not achieved, and the solid immersion lens 6 is again caused to vibrate. When the ratio (m/n) is not greater than the threshold value A, it is judged that optical close contact between the solid immersion lens 6 and the semiconductor device 11 is achieved, and an observed image of the semiconductor device 11 is acquired. Thereby, achieving an observation apparatus and method capable of improving the close contact between the solid immersion lens and an observation object.

Abstract translation: 当观察到半导体器件11时，首先，当检测到固体浸没透镜6与半导体器件11接触时，使固体浸没透镜6由振动发生器单元振动。 接下来，输入来自固体浸没透镜6的反射光图像以计算反射光图像的反射光量m，并且判断反射光量m与入射光量的比（m / n） n不大于阈值A.当比率（m / n）大于阈值A时，判断为没有实现固体浸没透镜6与半导体器件11之间的光学紧密接触，并且 再次使固体浸没透镜6振动。 当比率（m / n）不大于阈值A时，判断固体浸没透镜6与半导体器件11之间的光学紧密接触，并且获得半导体器件11的观察图像。 由此，能够实现能够改善固体浸没透镜与观察对象物之间的紧密接触的观察装置和方法。

公开(公告)号：US07635894B2

公开(公告)日：2009-12-22

申请号：US11387709

申请日：2006-03-24

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L21/84

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78675

Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less.

Abstract translation: 提供一种制造半导体薄膜的方法，其可以形成具有均匀晶体生长方向的晶粒和尺寸大的晶粒以及使用上述方法的制造设备以及制造薄膜晶体管的方法。 在上述方法中，通过施加被遮光元件部分遮挡的能量束，以遮光区域为起点进行熔融再结晶。 光束的照射为硅薄膜的遮光区域提供能量，使得以遮光区域为起始点进行熔融和再结晶，并且使得遮光区域中的局部温度梯度为 制成1200℃/小时以上。 在制造方法中，用于施加能量束的光学系统的分辨率优选为4μm以下。

公开(公告)号：US20090286374A1

公开(公告)日：2009-11-19

申请号：US12508888

申请日：2009-07-24

Applicant: Shigeru MORI ,  Takahiro KORENARI ,  Tadahiro MATSUZAKI ,  Hiroshi TANABE

Inventor： Shigeru MORI ,  Takahiro KORENARI ,  Tadahiro MATSUZAKI ,  Hiroshi TANABE

IPC: H01L21/336 ,  H01L21/26 ,  H01L21/302

CPC classification number: H01L29/78621 ,  H01L29/66757

Abstract: A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.

Abstract translation: 在绝缘基板上形成基底层，以局部方式形成半导体层。 然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。 然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。 用稀氢氟酸蚀刻栅极绝缘膜。 然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。 因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

公开(公告)号：US07396712B2

公开(公告)日：2008-07-08

申请号：US11400526

申请日：2006-04-10

Applicant: Hiroshi Tanabe ,  Akihiko Taneda

Inventor： Hiroshi Tanabe ,  Akihiko Taneda

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is carried out repeatedly to process the thin film. The first and the second optical pulse have pulse waveforms different from each other. Preferably, a unit of the irradiation of the optical beam includes the a first optical pulse irradiated to the thin film and a second optical pulse irradiated to the thin film starting substantially simultaneous with the first optical pulse irradiation. In this case, the relationship between the first and the second optical pulse satisfies (the pulse width of the first optical pulse)

Abstract translation: 一种薄膜加工方法，用于通过向薄膜照射光束来处理该薄膜。 光束照射的单位包括照射到薄膜的第一和第二光脉冲，并且重复进行照射的单位以处理薄膜。 第一和第二光脉冲具有彼此不同的脉冲波形。 优选地，光束的照射单元包括照射到薄膜的第一光脉冲和基本上与第一光脉冲照射同时发射的薄膜照射的第二光脉冲。 在这种情况下，第一和第二光脉冲之间的关系满足（第一光脉冲的脉冲宽度）<（第二光脉冲的光脉冲）和（第一光脉冲的照射强度）> =（ 第二光脉冲的照射强度）。 可以通过光照射形成具有小陷阱状态密度的硅薄膜。

公开(公告)号：US07396228B2

公开(公告)日：2008-07-08

申请号：US11358714

申请日：2006-02-22

Applicant: Hiroshi Tanabe ,  Hidekazu Yamashita

Inventor： Hiroshi Tanabe ,  Hidekazu Yamashita

IPC: F02C9/26

CPC classification number: C10K3/06 ,  C10L3/08 ,  C21B7/002 ,  C21B2100/64 ,  C21C5/38 ,  F23N2021/10 ,  F27B1/26 ,  F27B1/28 ,  F27D17/00 ,  F27D19/00 ,  F27D21/00 ,  F27D2019/0006 ,  Y02P20/124

Abstract: Calories of a first mixed gas are predicted by calculations based on the mixed flow rate of a blast furnace gas and the mixed flow rate of a converter gas measured by flow meters, and preset blast furnace gas calories and converter gas calories; the flow rate ratio of the mixed flow rate of a coke oven gas to a gas turbine consumed fuel gas flow rate is calculated based on the predicted calories, set calories, and preset coke oven gas calories; the mixed flow rate required value of the coke oven gas is calculated based on the flow rate ratio and a gas turbine fuel gas requirement signal corresponding to the gas turbine consumed fuel gas flow rate; and the opening of a coke oven gas flow control valve provided in a fuel gas production system is controlled, based on the mixed flow rate required value, to control the mixed flow rate of the coke oven gas.

Abstract translation: 通过基于高炉煤气的混合流量和通过流量计测量的转化器气体的混合流量以及预设的高炉气体卡路里和转换器气体卡路里的计算来预测第一混合气体的卡路里; 基于预测的卡路里，设定的卡路里和预设的焦炉气体卡路里计算焦炉煤气与燃气轮机的混合流量消耗燃料气体流量的流量比; 基于与燃气轮机消耗的燃料气体流量对应的流量比和燃气轮机燃料气体需求信号计算焦炉煤气的混合流量要求值; 并且基于混合流量要求值控制设置在燃料气体生产系统中的焦炉气体流量控制阀的打开，以控制焦炉气体的混合流量。

公开(公告)号：US20080044589A1

公开(公告)日：2008-02-21

申请号：US11907366

申请日：2007-10-11

Applicant: Kazuo Ichikawa ,  Hiroshi Tanabe ,  Katsuhisa Yuda

Inventor： Kazuo Ichikawa ,  Hiroshi Tanabe ,  Katsuhisa Yuda

IPC: C08J7/18

CPC classification number: C23C16/0245 ,  H01L29/4908

Abstract: An insulating film deposition chamber 40 has a plasma generator 14 having a plasma generation chamber 21 separated from the film deposition chamber 13 in which the substrate is arranged. A material gas is directly supplied to the film deposition chamber, and radicals are introduced into the film deposition chamber from the plasma generator, and a thin film is deposited on the substrate. Further, a cleaning gas feeder is added to the plasma generator. A cleaning gas is introduced through the cleaning gas feeder to produce plasma at the plasma generator to generate radicals, and the radicals are introduced into the film deposition chamber and irradiate the substrate to clean it.

Abstract translation: 绝缘膜沉积室40具有等离子体发生器14，其具有与沉积室13分离的等离子体产生室21，其中布置有基板。 将材料气体直接供给到成膜室，并且从等离子体发生器将自由基引入成膜室，并在基板上沉积薄膜。 此外，将清洁气体供给器添加到等离子体发生器。 通过清洁气体供给器引入清洁气体以在等离子体发生器处产生等离子体以产生自由基，并将自由基引入成膜室并照射基板以进行清洁。

公开(公告)号：US07285809B2

公开(公告)日：2007-10-23

申请号：US11410184

申请日：2006-04-24

Applicant: Hiroshi Tanabe ,  Hiroshi Haga

Inventor： Hiroshi Tanabe ,  Hiroshi Haga

IPC: H01L31/62

CPC classification number: H01L27/1285 ,  H01L27/1214 ,  H01L27/14643 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: An image input apparatus includes an insulating substrate; polycrystalline silicon islands formed on said insulating substrate; pixels each including thin film transistors and a photodiode formed above said thin film transistors, each of the thin film transistors have a source region, a channel region and a drain region foamed in one of the polycrystalline silicon islands.

Abstract translation: 图像输入装置包括绝缘基板; 形成在所述绝缘基板上的多晶硅岛; 每个薄膜晶体管的每一个包括薄膜晶体管和形成在所述薄膜晶体管上方的光电二极管，每个薄膜晶体管具有在多晶硅岛之一中发泡的源极区，沟道区和漏极区。

公开(公告)号：US07138303B2

公开(公告)日：2006-11-21

申请号：US10815393

申请日：2004-04-01

Applicant: Hiroshi Tanabe ,  Hiroshi Haga

Inventor： Hiroshi Tanabe ,  Hiroshi Haga

IPC: H01L21/00

CPC classification number: H01L27/1285 ,  H01L27/1214 ,  H01L27/14643 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: In a thin film transistor (TFT) including an insulating substrate and a polycrystalline silicon island formed on the insulating layer, a grain size of the polycrystalline silicon island is elongated along one direction. A source region, a channel region and a drain region are arranged in the polycrystalline silicon island in parallel with the direction.

Abstract translation: 在形成在绝缘层上的绝缘基板和多晶硅岛的薄膜晶体管（TFT）中，多晶硅岛的晶粒尺寸沿着一个方向伸长。 源极区域，沟道区域和漏极区域与该方向平行布置在多晶硅岛中。

公开(公告)号：US07119363B2

公开(公告)日：2006-10-10

申请号：US10911833

申请日：2004-08-05

Applicant: Yoshinobu Satou ,  Katsuhisa Yuda ,  Hiroshi Tanabe

Inventor： Yoshinobu Satou ,  Katsuhisa Yuda ,  Hiroshi Tanabe

IPC: H01L29/04

CPC classification number: H01L27/1296 ,  B23K26/04 ,  B23K26/066 ,  H01L21/02675 ,  H01L21/2026 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78633 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.