公开(公告)号：US20110305944A1

公开(公告)日：2011-12-15

申请号：US12952350

申请日：2010-11-23

Applicant: Na-Ri Seo ,  Ki-Jun Kim ,  Ihn Kim ,  Sam-Jin Park ,  Seung-Hun Han ,  Hye-Sun Jeong

Inventor： Na-Ri Seo ,  Ki-Jun Kim ,  Ihn Kim ,  Sam-Jin Park ,  Seung-Hun Han ,  Hye-Sun Jeong

IPC: H01M4/70 ,  H01M2/30

CPC classification number: H01M10/0585 ,  H01M2/021 ,  H01M2/0212 ,  H01M2/0237 ,  H01M4/04 ,  H01M4/13 ,  H01M4/70 ,  H01M10/0418 ,  H01M10/044 ,  H01M10/052 ,  H01M2004/029 ,  Y02T10/7011

Abstract: An electrode assembly according to an exemplary embodiment of the present invention comprises: a first electrode which includes a first electrode current collector and a first electrode active material layer formed on the first electrode current collector; a second electrode which includes a second electrode current collector and a second electrode active material layer formed on the second electrode current collector; and a separator disposed between the first electrode and the second electrode. A supporting portion is formed of a groove or a protrusion at an edge of the first electrode current collector, and a combination portion is combined with the supporting portion on the first electrode active material layer.

Abstract translation: 根据本发明示例性实施例的电极组件包括：第一电极，其包括形成在第一电极集电器上的第一电极集电器和第一电极活性材料层; 第二电极，其包括形成在所述第二电极集电体上的第二电极集电体和第二电极活性物质层; 以及设置在所述第一电极和所述第二电极之间的隔膜。 支撑部分由第一电极集电器的边缘处的凹槽或突起形成，并且组合部分与第一电极活性材料层上的支撑部分组合。

公开(公告)号：US20110218005A1

公开(公告)日：2011-09-08

申请号：US13040929

申请日：2011-03-04

Applicant: Joseph Jeon ,  Sung-Hyun Choi ,  Kwang-Hun Han ,  Dong-Myoung Kim ,  Du-Ho Kang ,  Seung-Hyun Choi

Inventor： Joseph Jeon ,  Sung-Hyun Choi ,  Kwang-Hun Han ,  Dong-Myoung Kim ,  Du-Ho Kang ,  Seung-Hyun Choi

IPC: H04W72/08

CPC classification number: H04W72/08

Abstract: An apparatus and method perform Transmit Power Control and Dynamic Frequency Selection (TPC/DFS) during a movement of a Base Station (BS). A network environment around the mobile BS is modeled. Based on the modeling result, a TPC/DFS operation scheme that is most suitable to the mobile BS is selected.

Abstract translation: 一种装置和方法在基站（BS）的移动期间执行发射功率控制和动态频率选择（TPC / DFS）。 围绕移动BS的网络环境被建模。 基于建模结果，选择最适合于移动BS的TPC / DFS操作方案。

公开(公告)号：US20110097561A1

公开(公告)日：2011-04-28

申请号：US12993785

申请日：2009-06-03

Applicant: Byoung-II Kang ,  Chang-Hun Han ,  Chan-Hong Lee ,  Dae-Woo Lee ,  Jae-Bum Seo ,  Sang-Seop Kim

Inventor： Byoung-II Kang ,  Chang-Hun Han ,  Chan-Hong Lee ,  Dae-Woo Lee ,  Jae-Bum Seo ,  Sang-Seop Kim

IPC: B32B27/30 ,  C08L51/04 ,  B82Y20/00

CPC classification number: C08J5/18 ,  C08J2333/06 ,  C08J2351/04 ,  G02B5/3083 ,  Y10S977/779 ,  Y10S977/782 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/254 ,  Y10T428/2998

Abstract: The present invention provides an optical film and s retardation film characterized in that each of them includes: an acrylic resin; and 20-65 parts by weight of at least two graft copolymers containing a conjugated diene-based rubber, based on 100 parts by weight of the acrylic resin, wherein at least two of the graft copolymers have different particle sizes. The present invention also provides a production method therefore.

Abstract translation: 本发明提供一种光学膜和延迟膜，其特征在于它们包括：丙烯酸树脂; 和基于100重量份丙烯酸树脂的20-65重量份的至少两种含有共轭二烯系橡胶的接枝共聚物，其中至少两种接枝共聚物具有不同的粒径。 因此，本发明也提供了一种制造方法。

公开(公告)号：US07880205B2

公开(公告)日：2011-02-01

申请号：US12234991

申请日：2008-09-22

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/108 ,  H01L29/04 ,  H01L31/062 ,  H01L31/113 ,  H01L31/036

CPC classification number: H01L27/14643 ,  H01L27/14636

Abstract: Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.

Abstract translation: 公开了一种图像传感器。 图像传感器包括：包括单位像素的半导体衬底;在半导体衬底上形成有金属互连的层间绝缘层;对应于单位像素形成在层间绝缘层上的多个底部电极，多个底部电极包括底部电极 具有至少两种不同尺寸的光电二极管，形成在包括底部电极的层间电介质层上的光电二极管，以及与单位像素相对应的在光电二极管上形成的滤色器。

公开(公告)号：US07838917B2

公开(公告)日：2010-11-23

申请号：US12379111

申请日：2009-02-12

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

Abstract translation: 一种CMOS图像传感器及其制造方法，其中CMOS图像传感器在光电二极管和隔离层之间的边界区域具有最小化的暗电流。 本发明包括在衬底的器件隔离区域中形成的第一导电型掺杂区域，围绕隔离区域的第一导电型掺杂区域和形成在隔离层和第一导电型之间的介电层 掺杂区域，其中所述第一导电型掺杂区域和所述介电层位于所述隔离层和第二导电型扩散区域之间。

公开(公告)号：US07572663B2

公开(公告)日：2009-08-11

申请号：US11615096

申请日：2006-12-22

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643

Abstract: A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area, and LDD region; selectively removing the interlayer dielectric layer such that the interlayer dielectric layer remains on the photodiode area; performing a first heat treatment process; sequentially forming a first insulating layer and a second insulating layer on the semiconductor substrate, where the etching selectivity of the first insulating layer is different from the etching selectivity of the second insulating layer; selectively etching the second insulating layer to form spacers on sidewalls of the gate electrode; selectively removing the first insulating layer to expose a source/drain area and forming a high-density N-type diffusion area in the exposed source/drain area; performing a second heat treatment process; and forming a metal silicide layer the high-density N-type diffusion area.

Abstract translation: 提供了一种用于制造CMOS图像传感器的方法。 该方法可以包括在包括栅电极，光电二极管区域和LDD区域的半导体衬底上形成层间电介质层; 选择性地去除所述层间电介质层，使得所述层间电介质层保留在所述光电二极管区域上; 执行第一热处理过程; 在所述半导体衬底上依次形成第一绝缘层和第二绝缘层，其中所述第一绝缘层的蚀刻选择性不同于所述第二绝缘层的蚀刻选择性; 选择性地蚀刻第二绝缘层以在栅电极的侧壁上形成间隔物; 选择性地去除第一绝缘层以暴露源极/漏极区域并在暴露的源极/漏极区域中形成高密度N型扩散区域; 执行第二热处理过程; 以及形成高密度N型扩散区域的金属硅化物层。

公开(公告)号：US07560674B2

公开(公告)日：2009-07-14

申请号：US11486489

申请日：2006-07-13

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/00

CPC classification number: H01L27/14645 ,  H01L27/14601 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14689

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The present CMOS image sensor comprises: first, second, and third photo diodes and a plurality of transistors spaced at a predetermined distance in a semiconductor substrate; a diffusion blocking layer on substantially an entire surface of the substrate, including an opening therein exposing at least one of the photo diodes; an interlevel dielectric layer over the entire surface of the substrate, covering the diffusion blocking layer; first, second and third color filter layers over the interlevel dielectric layer, respectively corresponding to the first, second and third photo diodes, and a plurality of microlenses over the color filter layers, corresponding to each color filter layer.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 本CMOS图像传感器包括：第一，第二和第三光电二极管和在半导体衬底中以预定距离隔开的多个晶体管; 在基底的整个表面上的扩散阻挡层，包括其中暴露至少一个光电二极管的开口; 在衬底的整个表面上的层间电介质层，覆盖扩散阻挡层; 分别对应于第一，第二和第三光电二极管的层间电介质层上的第一，第二和第三滤色器层以及对应于每个滤色器层的滤色器层上的多个微透镜。

公开(公告)号：US20090166628A1

公开(公告)日：2009-07-02

申请号：US12344493

申请日：2008-12-27

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L31/0376 ,  H01L31/18

CPC classification number: H01L31/105 ,  H01L27/14632 ,  H01L27/14692 ,  H01L31/0236 ,  H01L31/1055 ,  Y02E10/50

Abstract: An image sensor includes a first substrate having a circuitry including a wire formed therein and a photodiode formed above the circuitry. An unevenness is formed at the top of the photodiode. The unevenness may, for example, be formed by selectively etching the top of the photodiode and may act to maximize light absorption by the photodiode.

Abstract translation: 图像传感器包括具有包括形成在其中的导线的电路的第一基板和形成在电路之上的光电二极管。 在光电二极管的顶部形成凹凸。 可以通过选择性地蚀刻光电二极管的顶部而形成凹凸，并且可以起到使光电二极管的光吸收最大化的作用。

公开(公告)号：US07541630B2

公开(公告)日：2009-06-02

申请号：US11613224

申请日：2006-12-20

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/113 ,  H01L21/00

CPC classification number: H01L27/14687 ,  H01L27/14621

Abstract: A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a color filter layer comprising a first color filter, a second color filter, and a third color filter formed on the interlayer dielectric layer, wherein a portion of the first color filter and a portion of the second color filter are formed on one of the plurality of color filter isolation layers, and wherein a portion of the second color filter and a portion of the third color filter are formed on another of the plurality of color filter isolation layers; and microlenses formed on the color filter layer.

Abstract translation: 提供CMOS图像传感器及其制造方法。 在一个实施例中，CMOS图像传感器包括：形成在包括多个光电二极管和晶体管的半导体衬底上的层间介质层; 形成在所述层间绝缘层上的多个滤色器隔离层; 滤色器层，包括形成在所述层间电介质层上的第一滤色器，第二滤色器和第三滤色器，其中所述第一滤色器的一部分和所述第二滤色器的一部分形成在所述多个 的滤色器隔离层，并且其中所述第二滤色器的一部分和所述第三滤色器的一部分形成在所述多个滤色器隔离层中的另一个上; 和形成在滤色器层上的微透镜。

公开(公告)号：US07534643B2

公开(公告)日：2009-05-19

申请号：US11448496

申请日：2006-06-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L29/66659

Abstract: A method for fabricating a CMOS image sensor includes: forming a gate electrode on a pixel region of the semiconductor substrate and, at the same time, forming a polysilicon pattern on a middle resistor region; forming a first lightly doped n-type diffusion region on the photodiode region; forming a second lightly doped n-type diffusion region on the transistor region; consecutively forming first and second insulating layers on the entire surface of the semiconductor substrate; removing a predetermined portion of the second insulation layer on the transistor region and the middle resistor region; forming a third insulation layer on the entire surface of the semiconductor substrate; forming sidewalls of the first insulating layer and the third insulating layer on the gate electrode and the polysilicon pattern by performing an etch-back process; and heavily doping n-type impurities in the transistor region and the polysilicon pattern.

Abstract translation: 一种制造CMOS图像传感器的方法，包括：在半导体衬底的像素区域上形成栅极电极，同时在中间电阻器区域上形成多晶硅图案; 在所述光电二极管区域上形成第一轻掺杂n型扩散区; 在所述晶体管区上形成第二轻掺杂n型扩散区; 在半导体衬底的整个表面上连续形成第一和第二绝缘层; 去除晶体管区域和中间电阻器区域上的第二绝缘层的预定部分; 在所述半导体衬底的整个表面上形成第三绝缘层; 通过执行回蚀工艺在栅电极和多晶硅图案上形成第一绝缘层和第三绝缘层的侧壁; 并在晶体管区域和多晶硅图案中重掺杂n型杂质。