TORQUE SOCKET TOOL
    11.
    发明申请

    公开(公告)号:US20210187712A1

    公开(公告)日:2021-06-24

    申请号:US17039206

    申请日:2020-09-30

    申请人: HUNG-WEN HUANG

    IPC分类号: B25B23/142 B25B23/14

    摘要: A torque socket tool is provided, including: a main body, a driving member, an engaging member, a torque adjustment assembly and a rotating member. The main body defines an axial direction and has a first restricting portion. The driving member is rotatably disposed on the main body about the axial direction. The engaging member is slidably disposed on the main body. The torque adjustment assembly includes a mandrel. The mandrel is disposed within the main body and rotatable about the axial direction. The rotating member is non-rotatably sleeved with the mandrel and has a second restricting portion.

    PHOTONIC DEVICE HAVING EMBEDDED NANO-SCALE STRUCTURES
    12.
    发明申请
    PHOTONIC DEVICE HAVING EMBEDDED NANO-SCALE STRUCTURES 审中-公开
    具有嵌入式纳米尺度结构的光电器件

    公开(公告)号:US20130187122A1

    公开(公告)日:2013-07-25

    申请号:US13354162

    申请日:2012-01-19

    IPC分类号: H01L33/04 H01L33/60

    摘要: The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.

    摘要翻译: 本公开涉及一种制造照明装置的方法。 该方法包括在衬底上形成第一III-V族化合物层。 第一III-V族化合物层具有第一类导电性。 在第一III-V族化合物层上形成多量子阱(MQW)层。 然后在MQW层上形成第二个III-V族化合物层。 第二III-V族化合物层具有不同于第一类导电性的第二类型的导电性。 此后,在第二III-V族化合物层上形成多个导电组分。 然后在第二III-V族化合物层上和导电组分之上形成光反射层。 导电组件各自具有比光反射层更好的粘合和导电性能。

    LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME
    14.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MAKING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20090020772A1

    公开(公告)日:2009-01-22

    申请号:US11984562

    申请日:2007-11-20

    IPC分类号: H01L33/00

    CPC分类号: H01L33/20 H01L33/10 H01L33/44

    摘要: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

    摘要翻译: 发光装置能够发射波长为300〜550nm的光,并且包括:基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层,设置在有源层上并具有波导管布置表面; 以及波导结构,其形成在所述n型半导体层的所述波导配置面上,并具有从所述波导配置面延伸的多个间隔开的纳米棒。

    WAFER LEVEL CONFORMAL COATING FOR LED DEVICES
    15.
    发明申请
    WAFER LEVEL CONFORMAL COATING FOR LED DEVICES 有权
    用于LED器件的WAFER LEVEL CONFORMAL COATING

    公开(公告)号:US20120129282A1

    公开(公告)日:2012-05-24

    申请号:US12951662

    申请日:2010-11-22

    IPC分类号: H01L33/52

    摘要: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.

    摘要翻译: 提供一种制造发光二极管(LED)装置的方法。 该方法包括提供晶片。 晶片具有形成在其上的发光二极管(LED)装置。 该方法包括将晶片浸入表面张力低于乙酸的聚合物溶液中。 聚合物溶液含有液体聚合物和磷光体颗粒。 该方法包括以基本恒定的速度将晶片提出聚合物溶液。 该方法包括干燥晶片。 上述方法至少部分地围绕LED器件形成保形涂层。 涂层包括荧光体颗粒。 涂层也具有基本均匀的厚度。

    FOLDABLE TORQUE TOOL
    16.
    发明申请

    公开(公告)号:US20220305637A1

    公开(公告)日:2022-09-29

    申请号:US17554747

    申请日:2021-12-17

    申请人: HUNG-WEN HUANG

    发明人: HUNG-WEN HUANG

    摘要: A foldable torque tool is provided, including a handle, a driving member and a blocking structure. The driving member is rotatably disposed on the handle. The blocking structure has a first blocking unit and a second blocking unit. The first blocking unit is disposed on the handle. The second blocking unit is disposed on the driving member. When the driving member is in an unfolded position, the first blocking unit is blocked with the second blocking unit, and then the driving member is non-rotatable to a folded position.

    Torque socket tool
    17.
    发明授权

    公开(公告)号:US11207764B2

    公开(公告)日:2021-12-28

    申请号:US16739625

    申请日:2020-01-10

    申请人: Hung-Wen Huang

    发明人: Hung-Wen Huang

    IPC分类号: B25B23/142 B25B13/48

    摘要: A torque socket tool includes a main body, a driving portion, an abutting member, an axle, and a sleeve member. The main body defines an axial direction. The abutting member is non-rotatably and slidably arranged in the main body. The sleeve member is rotatably sleeved onto the main body. A threaded section drives the abutting member to slide along the axial direction for adjusting the predetermined torque when the axle is rotated by rotating the sleeve member.

    TORQUE WRENCH
    18.
    发明申请

    公开(公告)号:US20210379742A1

    公开(公告)日:2021-12-09

    申请号:US17235483

    申请日:2021-04-20

    申请人: HUNG-WEN HUANG

    发明人: HUNG-WEN HUANG

    IPC分类号: B25B23/142

    摘要: A torque wrench is provided, including a main body, a driving portion, a positioning member, a torque adjusting assembly and a tripping assembly. The main body defines an axial direction. The driving portion is disposed on an end of the main body. The positioning member is fixedly disposed in the main body. The torque adjusting assembly includes an abutting member and a mandrel, and the mandrel is disposed in the main body, rotatable about the axial direction and screwed to the abutting member. The tripping assembly includes an elastic abutting member and a plurality of notches arranged circumferentially one of the elastic abutting member and the plurality of notches is disposed on the mandrel, and the other of the elastic abutting member and the plurality of notches is disposed on the positioning member.

    TORQUE SOCKET TOOL
    19.
    发明申请
    TORQUE SOCKET TOOL 审中-公开

    公开(公告)号:US20200298383A1

    公开(公告)日:2020-09-24

    申请号:US16739625

    申请日:2020-01-10

    申请人: HUNG-WEN HUANG

    发明人: HUNG-WEN HUANG

    IPC分类号: B25B23/142 B25B13/48

    摘要: A torque socket tool includes a main body, a driving portion, an abutting member, an axle, and a sleeve member. The main body defines an axial direction. The abutting member is non-rotatably and slidably arranged in the main body. The sleeve member is rotatably sleeved onto the main body. A threaded section drives the abutting member to slide along the axial direction for adjusting the predetermined torque when the axle is rotated by rotating the sleeve member.

    Etching growth layers of light emitting devices to reduce leakage current
    20.
    发明授权
    Etching growth layers of light emitting devices to reduce leakage current 有权
    蚀刻生长层的发光器件,以减少漏电流

    公开(公告)号:US08592242B2

    公开(公告)日:2013-11-26

    申请号:US12949316

    申请日:2010-11-18

    IPC分类号: H01L21/00

    摘要: The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

    摘要翻译: 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法,以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域,并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层,其包括n掺杂层的台面区域上的有源层和p掺杂层。