公开(公告)号：US08415183B2

公开(公告)日：2013-04-09

申请号：US12951662

申请日：2010-11-22

申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

IPC分类号： H01L21/00

CPC分类号： H01L33/50 ,  H01L2933/0041 ,  H01L2933/005

摘要： Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.

摘要翻译： 提供一种制造发光二极管（LED）装置的方法。 该方法包括提供晶片。 晶片具有形成在其上的发光二极管（LED）装置。 该方法包括将晶片浸入表面张力低于乙酸的聚合物溶液中。 聚合物溶液含有液体聚合物和磷光体颗粒。 该方法包括以基本恒定的速度将晶片提出聚合物溶液。 该方法包括干燥晶片。 上述过程形成至少部分围绕LED器件的保形涂层。 涂层包括荧光体颗粒。 涂层也具有基本均匀的厚度。

公开(公告)号：US20120129282A1

公开(公告)日：2012-05-24

申请号：US12951662

申请日：2010-11-22

申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

IPC分类号： H01L33/52

CPC分类号： H01L33/50 ,  H01L2933/0041 ,  H01L2933/005

摘要： Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.

摘要翻译： 提供一种制造发光二极管（LED）装置的方法。 该方法包括提供晶片。 晶片具有形成在其上的发光二极管（LED）装置。 该方法包括将晶片浸入表面张力低于乙酸的聚合物溶液中。 聚合物溶液含有液体聚合物和磷光体颗粒。 该方法包括以基本恒定的速度将晶片提出聚合物溶液。 该方法包括干燥晶片。 上述方法至少部分地围绕LED器件形成保形涂层。 涂层包括荧光体颗粒。 涂层也具有基本均匀的厚度。

公开(公告)号：US08236584B1

公开(公告)日：2012-08-07

申请号：US13025975

申请日：2011-02-11

申请人： Chyi Shyuan Chem ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

发明人： Chyi Shyuan Chem ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/647 ,  H01L24/73 ,  H01L24/97 ,  H01L33/005 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

摘要： The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

摘要翻译： 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在硅衬底的第一侧和第二侧上的电介质层上形成图案化的金属层，并进一步填充TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。

公开(公告)号：US20120119228A1

公开(公告)日：2012-05-17

申请号：US12944895

申请日：2010-11-12

申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Chyi Shyuan Chern

发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Chyi Shyuan Chern

IPC分类号： H01L33/00

CPC分类号： H01L33/64 ,  H01L25/075 ,  H01L33/54 ,  H01L33/58 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014

摘要： An apparatus includes a wafer with a number of openings therein. For each opening, an LED device is coupled to a conductive carrier and the wafer in a manner so that each of the coupled LED device and a portion of the conductive carrier at least partially fill the opening. A method of fabricating an LED device includes forming a number of openings in a wafer. The method also includes coupling light-emitting diode (LED) devices to conductive carriers. The LED devices with conductive carriers at least partially fill each of the openings.

摘要翻译： 一种装置包括其中具有多个开口的晶片。 对于每个开口，LED器件以这样的方式耦合到导电载体和晶片，使得每个耦合的LED器件和导电载体的一部分至少部分地填充开口。 制造LED器件的方法包括在晶片中形成多个开口。 该方法还包括将发光二极管（LED）器件耦合到导电载体上。 具有导电载体的LED装置至少部分地填充每个开口。

公开(公告)号：US09099632B2

公开(公告)日：2015-08-04

申请号：US13476167

申请日：2012-05-21

申请人： Chyi Shyuan Chern ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

发明人： Chyi Shyuan Chern ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

IPC分类号： H01L33/64 ,  H01L23/00 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L33/647 ,  H01L24/73 ,  H01L24/97 ,  H01L33/005 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

摘要： A package structure includes: a substrate having a first side and a second side opposite to the first side; a metal layer disposed over at least a portion of the second side of the substrate; a light-reflective layer disposed over the first side of the substrate; and a photonic device bonded to the light-reflective layer from the first side. A segment of the metal layer extends through the substrate from the first side to the second side, and a portion of the substrate is completely enclosed in a cross-sectional view by the metal layer. The package structure is free of a bonding wire over the second side of the substrate.

摘要翻译： 封装结构包括：具有第一侧和与第一侧相对的第二侧的衬底; 设置在所述基板的第二侧的至少一部分上的金属层; 设置在所述基板的所述第一侧上的光反射层; 以及从第一侧接合到光反射层的光子器件。 金属层的一段从第一侧延伸穿过衬底到第二侧，并且一部分衬底被金属层的横截面视图完全封闭。 封装结构在衬底的第二面上没有接合线。

公开(公告)号：US20120205694A1

公开(公告)日：2012-08-16

申请号：US13025975

申请日：2011-02-11

申请人： Chyi Shyuan Chern ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

发明人： Chyi Shyuan Chern ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

IPC分类号： H01L33/60

CPC分类号： H01L33/647 ,  H01L24/73 ,  H01L24/97 ,  H01L33/005 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

摘要： The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

摘要翻译： 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在所述硅衬底的所述第一侧和所述第二侧上的所述电介质层上形成图案化的金属层，并进一步填充所述TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。

公开(公告)号：US08598617B2

公开(公告)日：2013-12-03

申请号：US13557272

申请日：2012-07-25

申请人： Chih-Kuang Yu ,  Chyi Shyuan Chern ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

发明人： Chih-Kuang Yu ,  Chyi Shyuan Chern ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00

摘要： An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

摘要翻译： LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层，多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上，以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。

公开(公告)号：US20120286240A1

公开(公告)日：2012-11-15

申请号：US13557272

申请日：2012-07-25

申请人： Chih-Kuang Yu ,  Chyi Shyuan Chern ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

发明人： Chih-Kuang Yu ,  Chyi Shyuan Chern ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

IPC分类号： H01L33/06

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00

摘要： An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

摘要翻译： LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层，多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上，以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。

公开(公告)号：US20120228650A1

公开(公告)日：2012-09-13

申请号：US13476167

申请日：2012-05-21

申请人： Chyi Shyuan Chern ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

发明人： Chyi Shyuan Chern ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

IPC分类号： H01L33/60 ,  H01L33/48

CPC分类号： H01L33/647 ,  H01L24/73 ,  H01L24/97 ,  H01L33/005 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

摘要： The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

摘要翻译： 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在所述硅衬底的所述第一侧和所述第二侧上的所述电介质层上形成图案化的金属层，并进一步填充所述TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。

公开(公告)号：US08241932B1

公开(公告)日：2012-08-14

申请号：US13050549

申请日：2011-03-17

申请人： Chih-Kuang Yu ,  Chyi Shyuan Chern ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

发明人： Chih-Kuang Yu ,  Chyi Shyuan Chern ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

IPC分类号： H01L21/00

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00

摘要： An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate.

摘要翻译： LED阵列包括生长衬底和在生长衬底上生长的至少两个分离的LED管芯。 每个LED管芯依次包括第一导电型掺杂层，多量子阱层和第二导电型掺杂层。 LED阵列结合到载体衬底。 LED阵列上的每个分离的LED管芯同时结合到载体衬底。 每个分离的LED管芯的第二导电型掺杂层靠近载体衬底。 每个LED管芯的第一导电型掺杂层被暴露。 在每个LED管芯和载体衬底上形成图案化隔离层。 导电互连形成在图案化的隔离层上，以将至少分离的LED管芯和每个LED管芯电连接到载体衬底。