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    WAFER LEVEL CONFORMAL COATING FOR LED DEVICES
    1.
    发明申请
    WAFER LEVEL CONFORMAL COATING FOR LED DEVICES 有权
    用于LED器件的WAFER LEVEL CONFORMAL COATING

    公开(公告)号：US20120129282A1

    公开(公告)日：2012-05-24

    申请号：US12951662

    申请日：2010-11-22

    申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

    发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

    IPC分类号： H01L33/52

    CPC分类号： H01L33/50 ,  H01L2933/0041 ,  H01L2933/005

    摘要： Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.

    摘要翻译： 提供一种制造发光二极管（LED）装置的方法。 该方法包括提供晶片。 晶片具有形成在其上的发光二极管（LED）装置。 该方法包括将晶片浸入表面张力低于乙酸的聚合物溶液中。 聚合物溶液含有液体聚合物和磷光体颗粒。 该方法包括以基本恒定的速度将晶片提出聚合物溶液。 该方法包括干燥晶片。 上述方法至少部分地围绕LED器件形成保形涂层。 涂层包括荧光体颗粒。 涂层也具有基本均匀的厚度。

    Wafer level conformal coating for LED devices
    2.
    发明授权
    Wafer level conformal coating for LED devices 有权
    LED器件的晶圆级保形涂层

    公开(公告)号：US08415183B2

    公开(公告)日：2013-04-09

    申请号：US12951662

    申请日：2010-11-22

    申请人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

    发明人： Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Hung-Yi Kuo ,  Hung-Wen Huang

    IPC分类号： H01L21/00

    CPC分类号： H01L33/50 ,  H01L2933/0041 ,  H01L2933/005

    摘要： Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a wafer. The wafer has light-emitting diode (LED) devices formed thereon. The method includes immersing the wafer into a polymer solution that has a surface tension lower than that of acetic acid. The polymer solution contains a liquid polymer and phosphor particles. The method includes lifting the wafer out of the polymer solution at a substantially constant speed. The method includes drying the wafer. The above processes form a conformal coating layer at least partially around the LED devices. The coating layer includes the phosphor particles. The coating layer also has a substantially uniform thickness.

    摘要翻译： 提供一种制造发光二极管（LED）装置的方法。 该方法包括提供晶片。 晶片具有形成在其上的发光二极管（LED）装置。 该方法包括将晶片浸入表面张力低于乙酸的聚合物溶液中。 聚合物溶液含有液体聚合物和磷光体颗粒。 该方法包括以基本恒定的速度将晶片提出聚合物溶液。 该方法包括干燥晶片。 上述过程形成至少部分围绕LED器件的保形涂层。 涂层包括荧光体颗粒。 涂层也具有基本均匀的厚度。

    Etching growth layers of light emitting devices to reduce leakage current
    3.
    发明授权
    Etching growth layers of light emitting devices to reduce leakage current 有权
    蚀刻生长层的发光器件，以减少漏电流

    公开(公告)号：US08592242B2

    公开(公告)日：2013-11-26

    申请号：US12949316

    申请日：2010-11-18

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L21/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/20

    摘要： The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

    摘要翻译： 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。

    Method to remove sapphire substrate
    4.
    发明授权
    Method to remove sapphire substrate 有权
    去除蓝宝石衬底的方法

    公开(公告)号：US08563334B2

    公开(公告)日：2013-10-22

    申请号：US12881457

    申请日：2010-09-14

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L21/3065 ,  H01L21/66 ,  H01L21/306

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/405

    摘要： A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.

    摘要翻译： 发光二极管（LED）形成在通过研磨然后蚀刻蓝宝石衬底而从LED除去的蓝宝石衬底上。 使用单一研磨剂或多个研磨剂将蓝宝石衬底首先研磨至第一指定厚度。 通过干蚀刻或湿法蚀刻去除剩余的蓝宝石衬底。

    ETCHING GROWTH LAYERS OF LIGHT EMITTING DEVICES TO REDUCE LEAKAGE CURRENT
    6.
    发明申请
    ETCHING GROWTH LAYERS OF LIGHT EMITTING DEVICES TO REDUCE LEAKAGE CURRENT 有权
    消除发光装置的生长层，以减少泄漏电流

    公开(公告)号：US20120126262A1

    公开(公告)日：2012-05-24

    申请号：US12949316

    申请日：2010-11-18

    申请人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    发明人： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/20

    摘要： The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

    摘要翻译： 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。

    LIGHT EMITTING DEVICE
    7.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20120012871A1

    公开(公告)日：2012-01-19

    申请号：US12837227

    申请日：2010-07-15

    申请人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    发明人： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

    IPC分类号： H01L33/10 ,  H01L21/66 ,  H01L21/50

    CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

    摘要： The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

    摘要翻译： 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

    Torque socket tool
    8.
    发明授权
    Torque socket tool 有权

    公开(公告)号：US11207764B2

    公开(公告)日：2021-12-28

    申请号：US16739625

    申请日：2020-01-10

    申请人： Hung-Wen Huang

    发明人： Hung-Wen Huang

    IPC分类号： B25B23/142 ,  B25B13/48

    摘要： A torque socket tool includes a main body, a driving portion, an abutting member, an axle, and a sleeve member. The main body defines an axial direction. The abutting member is non-rotatably and slidably arranged in the main body. The sleeve member is rotatably sleeved onto the main body. A threaded section drives the abutting member to slide along the axial direction for adjusting the predetermined torque when the axle is rotated by rotating the sleeve member.

    Torque socket tool
    10.
    发明授权
    Torque socket tool 有权

    公开(公告)号：US11260508B2

    公开(公告)日：2022-03-01

    申请号：US17039206

    申请日：2020-09-30

    申请人： Hung-Wen Huang

    发明人： Hung-Wen Huang ,  Ta-Hsin Feng

    IPC分类号： B25B13/06 ,  B25B23/00 ,  B25B23/142 ,  B25B23/14

    摘要： A torque socket tool is provided, including: a main body, a driving member, an engaging member, a torque adjustment assembly and a rotating member. The main body defines an axial direction and has a first restricting portion. The driving member is rotatably disposed on the main body about the axial direction. The engaging member is slidably disposed on the main body. The torque adjustment assembly includes a mandrel. The mandrel is disposed within the main body and rotatable about the axial direction. The rotating member is non-rotatably sleeved with the mandrel and has a second restricting portion.