公开(公告)号：US06727105B1

公开(公告)日：2004-04-27

申请号：US09514934

申请日：2000-02-28

Applicant: James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

Inventor： James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

IPC: H01L2100

CPC classification number: H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01L27/222 ,  H01L43/08

Abstract: A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.

Abstract translation: 用于磁随机存取存储器（“MRAM”）器件的存储器单元的自旋相关隧道（“SDT”）结包括钉扎铁磁层，随后是绝缘隧道势垒和感测铁磁层。 在制造MRAM器件期间，在形成钉扎层之后但在形成绝缘隧道势垒之前，被钉扎层的暴露表面变平。 被钉扎层的暴露表面可以通过离子蚀刻工艺变平。

公开(公告)号：US06205051B1

公开(公告)日：2001-03-20

申请号：US09522269

申请日：2000-03-09

Applicant: James A. Brug ,  Thomas C. Anthony ,  Manoj K. Bhattarcharyya

Inventor： James A. Brug ,  Thomas C. Anthony ,  Manoj K. Bhattarcharyya

IPC: G11C1114

CPC classification number: G11C11/16 ,  G11C11/14

Abstract: A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.

Abstract translation: 一种稳定磁存储单元，包括具有在数据存储层的一对相对边缘附近的内部区域和一对端部区域的数据存储层，以及稳定材料，其将端部区域中的磁化引导至预定方向。 一种用于稳定磁存储单元的方法包括以下步骤：施加磁场，该磁场将磁存储单元的数据存储层的一对相对侧区域的磁化旋转到预定方向，并且减小一对 磁存储单元的相对的端部区域，从而降低端部区域中不可预测的开关行为的可能性。

公开(公告)号：US6134139A

公开(公告)日：2000-10-17

申请号：US363081

申请日：1999-07-28

Applicant: Manoj K. Bhattacharyya ,  James A. Brug

Inventor： Manoj K. Bhattacharyya ,  James A. Brug

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/14

CPC classification number: G11C11/16

Abstract: A magnetic memory with enhanced half-select margin includes an array of magnetic memory cells each having a data storage layer with an easy axis and an array of conductors each having an angle of orientation with respect to the easy axes that is preselected to enhance half-select margin in the magnetic memory. The angle of orientation is such that the longitudinal write field is enhanced and the perpendicular write field is minimized in a selected memory cell. The magnetic memory cells optionally includes a structured data storage layer including a control layer that minimizes the likelihood of half-select switching in the unselected magnetic memory cells.

Abstract translation: 具有增强的半选择余量的磁存储器包括磁存储单元的阵列，每个磁存储单元具有易于轴的数据存储层和导体阵列，每个导体阵列相对于容易的轴具有取向角， 在磁存储器中选择余量。 取向角使得纵向写入场增强，并且垂直写入场在选定的存储单元中最小化。 磁存储单元可选地包括结构化数据存储层，其包括使未选择的磁存储单元中的半选择切换的可能性最小化的控制层。

公开(公告)号：US5388014A

公开(公告)日：1995-02-07

申请号：US119468

申请日：1993-09-10

Applicant: James A. Brug ,  Richard H. Henze ,  Steven L. Naberhuis

Inventor： James A. Brug ,  Richard H. Henze ,  Steven L. Naberhuis

IPC: G11B5/39 ,  G11B5/48 ,  G11B5/55 ,  G11B5/584 ,  G11B5/596 ,  G11B21/10 ,  G11B5/03 ,  G11B5/127 ,  G11B5/516 ,  G11R5/33

CPC classification number: G11B5/5547 ,  G11B5/3948 ,  G11B5/488 ,  G11B2005/0018 ,  G11B5/3954 ,  G11B5/584 ,  G11B5/59683

Abstract: An apparatus and method for determining the position of a magnetic head from a magnetic track in a storage medium. The magnetic head includes two magneto-resistive elements electrically separated by an insulative layer; current leads for biasing the MR elements and rotating the magnetization of the MR elements in opposite directions that are transverse from the respective axes of the elements; and circuitry to monitor the resistance changes of the respective MR elements and producing respective first and second output signals and to manipulate the output signals to provide an indication of the cross-track position of the magnetic head relative to the magnetic track.

Abstract translation: 一种用于从存储介质中的磁道确定磁头的位置的装置和方法。 磁头包括由绝缘层电隔离的两个磁阻元件; 用于偏置MR元件并使MR元件的磁化沿与元件的各个轴线横向相反的方向旋转的电流引线; 以及用于监视各个MR元件的电阻变化并产生相应的第一和第二输出信号并且操纵输出信号以提供磁头相对于磁道的交叉磁道位置的指示的电路。

公开(公告)号：US09372349B2

公开(公告)日：2016-06-21

申请号：US14126736

申请日：2011-06-30

Applicant: James A Brug ,  David A Fattal ,  Huei Pei Kuo

Inventor： James A Brug ,  David A Fattal ,  Huei Pei Kuo

IPC: G02B27/22 ,  G02B5/18 ,  H04N13/04

CPC classification number: G02B27/2214 ,  G02B5/1809 ,  G02B5/1842 ,  H04N13/302

Abstract: A light field display for providing continuous 3D images to viewers at multiple views is provided. The light field display includes a pixel layer having a plurality of pixel layer elements, a resonant subwavelength lens layer having a plurality of resonant subwavelength lenses and a circuit board connected to the pixel layer and the resonant subwavelength lens layer. Each resonant subwavelength lens in the resonant subwavelength lens layer is integrated with an element in the pixel layer. The element may be either a pixel or a subpixel, such that each image view may be provided per pixel or subpixel in the pixel layer.

Abstract translation: 提供了用于在多个视图上向观看者提供连续3D图像的光场显示。 光场显示器包括具有多个像素层元件的像素层，具有多个谐振子波长透镜的谐振亚波长透镜层和连接到像素层和谐振亚波长透镜层的电路板。 谐振亚波长透镜层中的每个谐振子波长透镜与像素层中的元件集成。 元件可以是像素或子像素，使得可以在像素层中每像素或子像素提供每个图像视图。

公开(公告)号：US06424565B1

公开(公告)日：2002-07-23

申请号：US09561317

申请日：2000-04-28

Applicant: James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

Inventor： James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

IPC: G11C1114

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The solid-state memory includes circuitry for reducing leakage current among the conductors thereby increasing signal to noise ratio during read operations.

公开(公告)号：US06169686A

公开(公告)日：2001-01-02

申请号：US08974925

申请日：1997-11-20

Applicant: James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

Inventor： James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

IPC: G11C1114

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

公开(公告)号：US6081446A

公开(公告)日：2000-06-27

申请号：US089947

申请日：1998-06-03

Applicant: James A. Brug ,  Manoj K. Bhatacharyya

Inventor： James A. Brug ,  Manoj K. Bhatacharyya

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/56

CPC classification number: G11C11/15 ,  G11C11/5607 ,  G11C2211/5615

Abstract: A multiple bit magnetic memory cell includes a data storage layer having a shape which is preselected to provide at least three domain states wherein each domain state corresponds to a particular logic state and a particular orientation of magnetization in the data storage layer. The multiple bit magnetic memory cell includes a reference layer having a fixed orientation of magnetization which is defined by an angle of orientation wherein the angle of orientation is preselected to distinguish the domain states of the data storage layer.

Abstract translation: 多位磁存储单元包括具有预先选择以提供至少三个域状态的形状的数据存储层，其中每个域状态对应于数据存储层中的特定逻辑状态和特定取向的磁化。 多位磁存储单元包括具有固定的磁化取向的参考层，其由定向角限定，其中预定方向角被选择以区分数据存储层的域状态。

公开(公告)号：US6072717A

公开(公告)日：2000-06-06

申请号：US146819

申请日：1998-09-04

Applicant: James A. Brug ,  Thomas C. Anthony ,  Manoj K. Bhattarcharyya

Inventor： James A. Brug ,  Thomas C. Anthony ,  Manoj K. Bhattarcharyya

IPC: G11C11/14 ,  G11C11/16

CPC classification number: G11C11/16 ,  G11C11/14

Abstract: A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.

Abstract translation: 一种稳定磁存储单元，包括具有在数据存储层的一对相对边缘附近的内部区域和一对端部区域的数据存储层，以及稳定材料，其将端部区域中的磁化引导至预定方向。 一种用于稳定磁存储单元的方法包括以下步骤：施加磁场，该磁场将磁存储单元的数据存储层的一对相对侧区域的磁化旋转到预定方向，并且减小一对 磁存储单元的相对的端部区域，从而降低端部区域中不可预测的开关行为的可能性。

公开(公告)号：US5982660A

公开(公告)日：1999-11-09

申请号：US140992

申请日：1998-08-27

Applicant: Manoj K. Bhattacharyya ,  James A. Brug

Inventor： Manoj K. Bhattacharyya ,  James A. Brug

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22

CPC classification number: G11C11/16 ,  B82Y10/00 ,  H01L27/222 ,  H01L43/08

Abstract: A magnetic memory cell including a data storage layer having an easy axis and a reference layer having an orientation of magnetization which is pinned in a direction that is off-axis with respect to the easy axis. This structure increases the signal obtainable during read operation on the magnetic memory cell notwithstanding the effects of magnetizations in the edge domains of the data storage layer. In addition, this structure allows high MRAM densities to be achieved using square-shaped memory cell structures.

Abstract translation: 一种磁存储单元，包括具有容易轴的数据存储层和具有相对于容易轴在离轴方向上固定的磁化取向的参考层。 尽管在数据存储层的边缘域中存在磁化的影响，但是这种结构增加了在磁存储器单元的读取操作期间可获得的信号。 此外，该结构允许使用正方形形状的存储单元结构实现高MRAM密度。