公开(公告)号：US5770697A

公开(公告)日：1998-06-23

申请号：US477509

申请日：1995-06-07

Applicant: Franco A. Ferrari ,  Charles Richardson ,  James Chambers ,  Stuart Causey ,  Thomas J. Pollock ,  Joseph Cappello ,  John W. Crissman

Inventor： Franco A. Ferrari ,  Charles Richardson ,  James Chambers ,  Stuart Causey ,  Thomas J. Pollock ,  Joseph Cappello ,  John W. Crissman

IPC: C07K14/435 ,  C07K14/78 ,  C12N1/06 ,  C12N15/11 ,  C12N15/62 ,  C12N15/70 ,  C12N15/75 ,  A61K38/17 ,  A61K38/39 ,  C12P21/02

CPC classification number: C12N15/62 ,  C07K14/43586 ,  C07K14/78 ,  C12N1/06 ,  C12N15/11 ,  C12N15/70 ,  C12N15/75 ,  C07K2319/00 ,  C07K2319/02 ,  C07K2319/61

Abstract: Novel polypeptides comprising repetitive units of amino acids, as well as synthetic genes encoding the subject polypeptides are provided. The subject polypeptides are characterized by comprising repetitive units of amino acids, where the repetitive units are present in naturally occurring proteins, particularly naturally occurring structural proteins. The subject polypeptides find use in a variety of applications, such as structural components of prosthetic devices, synthetic fibers, and the like.

公开(公告)号：US782736A

公开(公告)日：1905-02-14

申请号：US1904210891

申请日：1904-06-02

Applicant: JAMES CHAMBERS

Inventor： EPPERSON CHARLES W

CPC classification number: B65D1/02 ,  B67C11/02 ,  Y10T24/1406

公开(公告)号：US09074443B2

公开(公告)日：2015-07-07

申请号：US12500566

申请日：2009-07-09

Applicant: Kevin L. Gray ,  Thomas F. Bailey ,  James Chambers

Inventor： Kevin L. Gray ,  Thomas F. Bailey ,  James Chambers

IPC: E21B47/12 ,  E21B21/08 ,  E21B33/08 ,  E21B17/01

CPC classification number: E21B33/085 ,  E21B3/02 ,  E21B7/12 ,  E21B17/01 ,  E21B21/08 ,  E21B33/064 ,  E21B47/00 ,  E21B47/06 ,  E21B47/065 ,  E21B47/12 ,  E21B47/122 ,  G01V11/002

Abstract: The present invention generally relates to an apparatus and a method of transmitting data from a rotating control device. In one aspect, a method of transmitting data from a rotating control device coupled to an offshore drilling unit is provided. The method includes the step of generating data relating to a parameter associated with the rotating control device. The method further includes the step of transmitting the data from a transmitting assembly coupled to the rotating control device to a receiving assembly positioned proximate the transmitting assembly. Additionally, the method includes the step of transmitting the data from the receiving assembly to the offshore drilling unit. In another aspect, a data gathering and transmitting system for use with a rotating control device coupled to an offshore drilling unit is provided. In a further aspect, a method for transmitting data generated in a rotating control device coupled to a riser is provided.

Abstract translation: 本发明一般涉及从旋转控制装置发送数据的装置和方法。 一方面，提供一种从耦合到海上钻井单元的旋转控制装置传送数据的方法。 该方法包括生成与旋转控制装置相关的参数有关的数据的步骤。 该方法还包括将数据从耦合到旋转控制装置的发送组件传送到靠近发射组件定位的接收组件的步骤。 此外，该方法包括将数据从接收组件传送到海上钻井单元的步骤。 在另一方面，提供了一种与耦合到海上钻井单元的旋转控制装置一起使用的数据收集和传送系统。 在另一方面，提供一种用于传送在连接到提升管的旋转控制装置中产生的数据的方法。

公开(公告)号：US20080044957A1

公开(公告)日：2008-02-21

申请号：US11870631

申请日：2007-10-11

Applicant: James Chambers ,  Mark Visokay ,  Luigi Colombo ,  Antonio Rotondaro

Inventor： James Chambers ,  Mark Visokay ,  Luigi Colombo ,  Antonio Rotondaro

IPC: H01L21/84

CPC classification number: H01L21/823842

Abstract: Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second and third metals, respectively, to move the work function of the first metal in opposite directions in the different regions. The resulting work functions in the different regions correspond to that of different types of the transistors that are to be formed.

Abstract translation: 公开了具有不同功函数的金属栅极晶体管。 在一个示例中，第一金属是“中间间隙”金属，分别在第一和第二区域中被第二和第三金属操纵，以在不同区域中沿相反方向移动第一金属的功函数。 在不同区域中产生的功函数对应于将要形成的不同类型的晶体管。

公开(公告)号：US20070122962A1

公开(公告)日：2007-05-31

申请号：US11620447

申请日：2007-01-05

Applicant: James Chambers ,  Mark Visokay ,  Luigi Colombo

Inventor： James Chambers ,  Mark Visokay ,  Luigi Colombo

IPC: H01L21/8238

CPC classification number: H01L21/823857 ,  H01L21/823842 ,  Y10S438/981

Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. An I/O dielectric layer is formed in core and I/O regions of a semiconductor device (506). The I/O dielectric layer is removed (508) from the core region of the device. A core dielectric layer is formed in the core region (510). A barrier layer is deposited and patterned to expose the NMOS devices of the core region (512). The core dielectric layer is removed from the core NMOS devices (514). A high-k dielectric layer is formed (514) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions/devices of the core region and the NMOS and PMOS regions/devices of the I/O region.

Abstract translation: 本发明通过提供在NMOS区内选择性地形成高k电介质层的制造方法来促进半导体制造。 在半导体器件（506）的芯和I / O区域中形成I / O电介质层。 从器件的芯区域去除（508）I / O电介质层。 在芯区域（510）中形成芯介质层。 屏蔽层被沉积并图案化以暴露核心区域（512）的NMOS器件。 从核心NMOS器件（514）去除芯介质层。 在核心和I / O区域上形成高k电介质层（514）。 然后，从核心区域的PMOS区域/器件和I / O区域的NMOS和PMOS区域/器件去除高k电介质层（512）。

公开(公告)号：US20070037343A1

公开(公告)日：2007-02-15

申请号：US11200741

申请日：2005-08-10

Applicant: Luigi Colombo ,  James Chambers ,  Mark Visokay

Inventor： Luigi Colombo ,  James Chambers ,  Mark Visokay

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L29/66545

Abstract: The present invention provides a method of forming a dual work function metal gate microelectronics device 200. In one aspect, the method includes forming nMOS and pMOS stacked gate structures 315a and 315b. The nMOS and pMOS stacked gate structures 315a and 315b each comprise a gate dielectric 205, a first metal layer, 305 located over the gate dielectric 205 and a sacrificial gate layer 310 located over the first metal layer 305. The method further includes removing the sacrificial gate layer 310 in at least one of the nMOS or pMOS stacked gate structures, thereby forming a gate opening 825 and modifying the first metal layer 305 within the gate opening 825 to form a gate electrode with a desired work function.

公开(公告)号：US20060144622A1

公开(公告)日：2006-07-06

申请号：US11366078

申请日：2006-03-02

Applicant: Thomas Bailey ,  James Chambers ,  Don Hannegan ,  Mark Gravouia

Inventor： Thomas Bailey ,  James Chambers ,  Don Hannegan ,  Mark Gravouia

IPC: E21B17/10

CPC classification number: E21B33/085 ,  E21B36/001 ,  E21B47/10 ,  F16J15/324 ,  F16K41/046

Abstract: A system and method for reducing repairs to radial seals used in a rotating control head used while drilling is disclosed. Also, a system and method to detect leaks in the rotating control head and a latching system to latch the rotating control head to a housing is disclosed.

Abstract translation: 公开了一种用于减少在钻孔时使用的旋转控制头中使用的径向密封维修的系统和方法。 此外，公开了一种用于检测旋转控制头中的泄漏的系统和方法，以及用于将旋转控制头锁定到壳体的闩锁系统。

公开(公告)号：US20060043524A1

公开(公告)日：2006-03-02

申请号：US11221103

申请日：2005-09-07

Applicant: Mark Visokay ,  James Chambers

Inventor： Mark Visokay ,  James Chambers

IPC: H01L29/00

CPC classification number: H01L29/7831 ,  H01L29/66484

Abstract: The present invention provides a system for producing a triple-gate transistor segment (300), utilizing a standard semiconductor substrate (302). The substrate has a plurality of isolation regions (304) formed along its upper surface in a distally separate relationship, defining a channel region (306). A form structure (308) is disposed atop the isolation regions, and defines a channel body area (310) over the channel region. A channel body structure (316) is disposed within the channel body area, and is engineered to provide a blunted corner or edge (318) along a perimeter of its upper exposed surface. The form structure is then removed, and subsequent processing is performed.

公开(公告)号：US20050241833A1

公开(公告)日：2005-11-03

申请号：US11123329

申请日：2005-05-06

Applicant: Thomas Bailey ,  James Chambers ,  Mark Gravouia

Inventor： Thomas Bailey ,  James Chambers ,  Mark Gravouia

IPC: E21B33/08 ,  E21B33/06

CPC classification number: F16J15/3224 ,  E21B33/085 ,  F16J15/025 ,  F16J15/3208 ,  F16J15/3216 ,  F16J15/3236

Abstract: A seal assembly for use with a rotating control head is provided. The seal assembly includes a rotatable member and a cavity formed between the rotatable member and a tubular radially inwardly disposed from the rotatable member. The cavity having a first surface and a second surface. The seal assembly further includes a seal member having a first end and a second end disposed between the first surface and the second surface of the cavity and sealable with the tubular between the first and the second ends due to deformation of the seal member.

Abstract translation: 提供了一种用于旋转控制头的密封组件。 密封组件包括可旋转构件和形成在可旋转构件和从可旋转构件径向向内布置的管状物之间的空腔。 空腔具有第一表面和第二表面。 密封组件还包括密封构件，密封构件具有第一端和设置在空腔的第一表面和第二表面之间的第二端，并且由于密封构件的变形而可与第一和第二端之间的管状物密封。

公开(公告)号：US20050124121A1

公开(公告)日：2005-06-09

申请号：US10731647

申请日：2003-12-09

Applicant: Antonio Rotondaro ,  James Chambers ,  Mark Visokay ,  Luigi Colombo

Inventor： Antonio Rotondaro ,  James Chambers ,  Mark Visokay ,  Luigi Colombo

IPC: C23C16/56 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/8242 ,  H01L29/51

CPC classification number: H01L21/02318 ,  C23C16/56 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: The present invention pertains to annealing a high dielectric constant (high-k) material in a manner that substantially reduces or eliminates disadvantages and problems heretofore associated with the same. In particular, the high-k material is annealed in an ambient having a single chemistry of nitrogen and hydrogen, such as ammonia (NH3), to nitride and react unwanted impurities, and an oxidizer to oxidize and densify the high-k material, while mitigating growth of a lower-k material at an interface of the high-k material and an underlying substrate. Additionally, particular temperatures and pressures are utilized within the process so that the risk of an undesired exothermic reaction is mitigated. Annealing the high-k material in accordance with manners disclosed herein has application to semiconductor fabrication processes and, as such, is discussed herein within the context of the same.

Abstract translation: 本发明涉及以大大减少或消除与之相关的缺点和问题的方式退火高介电常数（高k）材料。 特别地，高k材料在具有氮和氢的单一化学性质（例如氨（NH 3））的环境中退火至氮化物并反应不需要的杂质，以及氧化剂氧化和 致密化高k材料，同时减轻在高k材料和下层衬底的界面处的较低k材料的生长。 此外，在该方法中利用特定的温度和压力，以便减轻不期望的放热反应的风险。 根据本文公开的方式对高k材料进行退火，已经应用于半导体制造工艺，并且因此本文在其上下文中讨论。