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    Magnetic memory device and method of fabricating the same
    11.
    发明授权
    Magnetic memory device and method of fabricating the same 有权
    磁记忆装置及其制造方法

    公开(公告)号：US07732222B2

    公开(公告)日：2010-06-08

    申请号：US11465075

    申请日：2006-08-16

    Applicant: Jun-Soo Bae ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Se-Chung Oh ,  Kyung-Tae Nam

    Inventor： Jun-Soo Bae ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Se-Chung Oh ,  Kyung-Tae Nam

    IPC: H01L21/00

    CPC classification number: G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/08

    Abstract: There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.

    Abstract translation: 提供了一种磁存储器件及其形成方法。 磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。 在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。 在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。 在存储和无引导模式之间插入一个自由的反转模式。 自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

    Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same
    12.
    发明授权
    Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same 有权
    使用可变电阻器作为存储元件的非易失性存储器件及其操作方法

    公开(公告)号：US07701748B2

    公开(公告)日：2010-04-20

    申请号：US11983664

    申请日：2007-11-09

    Applicant: Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeon

    Inventor： Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeon

    IPC: G11C11/00

    CPC classification number: G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/79

    Abstract: A nonvolatile memory device includes a first electrode and a second electrode, and a variable resistor interposed between the first and second electrodes. The variable resistor has a critical voltage, and a resistance-voltage characteristic of the variable resistor is switched at a voltage higher than the critical voltage, so that a resistance of the variable resistor is higher at a read voltage applied after the switching of the resistance-voltage curve than at a read voltage applied before the switching of the resistance-voltage curve. Methods of operating a nonvolatile memory device include setting a plurality of write voltages higher than an initial critical voltage, assigning respective data values to states in which a resistance-voltage characteristic is switched at the write voltages, setting a read voltage lower than the initial critical voltage, and reading the data values by measuring current flowing through the variable resistor in response to the read voltage.

    Abstract translation: 非易失性存储器件包括第一电极和第二电极以及插在第一和第二电极之间的可变电阻器。 可变电阻器具有临界电压，并且可变电阻器的电阻 - 电压特性以高于临界电压的电压切换，使得在电阻切换之后施加的读取电压时，可变电阻器的电阻较高 - 电压曲线比在电阻 - 电压曲线切换之前施加的读取电压。 操作非易失性存储器件的方法包括设置高于初始临界电压的多个写入电压，将各个数据值分配给在写入电压下电阻 - 电压特性被切换的状态，将读取电压设置为低于初始临界电压 电压，并且通过测量响应于读取电压流过可变电阻器的电流来读取数据值。

    Magnetic random access memory device and method of forming the same
    14.
    发明申请
    Magnetic random access memory device and method of forming the same 有权

    公开(公告)号：US20080153179A1

    公开(公告)日：2008-06-26

    申请号：US12073098

    申请日：2008-02-29

    Applicant: Se-Chung OH ,  Jang-Eun LEE ,  Jun-Soo BAE ,  Hyun-Jo KIM ,  Kyung-Tae NAM ,  Young-Ki HA

    Inventor： Se-Chung OH ,  Jang-Eun LEE ,  Jun-Soo BAE ,  Hyun-Jo KIM ,  Kyung-Tae NAM ,  Young-Ki HA

    IPC: H01L21/00

    CPC classification number: G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044

    Abstract: Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.

    Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same
    15.
    发明申请
    Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same 有权
    使用可变电阻器作为存储元件的非易失存储器件及其操作方法

    公开(公告)号：US20080123394A1

    公开(公告)日：2008-05-29

    申请号：US11983664

    申请日：2007-11-09

    Applicant: Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeon

    Inventor： Jang-Eun Lee ,  Se-Chung Oh ,  Kyung-Tae Nam ,  Jun-Ho Jeon

    IPC: G11C11/00 ,  G11C7/00

    CPC classification number: G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/79

    Abstract: A nonvolatile memory device includes a first electrode and a second electrode, and a variable resistor interposed between the first and second electrodes. The variable resistor has a critical voltage, and a resistance-voltage characteristic of the variable resistor is switched at a voltage higher than the critical voltage, so that a resistance of the variable resistor is higher at a read voltage applied after the switching of the resistance-voltage curve than at a read voltage applied before the switching of the resistance-voltage curve. Methods of operating a nonvolatile memory device include setting a plurality of write voltages higher than an initial critical voltage, assigning respective data values to states in which a resistance-voltage characteristic is switched at the write voltages, setting a read voltage lower than the initial critical voltage, and reading the data values by measuring current flowing through the variable resistor in response to the read voltage.

    Abstract translation: 非易失性存储器件包括第一电极和第二电极以及插在第一和第二电极之间的可变电阻器。 可变电阻器具有临界电压，并且可变电阻器的电阻 - 电压特性以高于临界电压的电压切换，使得在电阻切换之后施加的读取电压时，可变电阻器的电阻较高 - 电压曲线比在电阻 - 电压曲线切换之前施加的读取电压。 操作非易失性存储器件的方法包括设置高于初始临界电压的多个写入电压，将各个数据值分配给在写入电压下电阻 - 电压特性被切换的状态，将读取电压设置为低于初始临界电压 电压，并且通过测量响应于读取电压流过可变电阻器的电流来读取数据值。

    Method of writing to MRAM devices
    20.
    发明申请
    Method of writing to MRAM devices 有权
    写入MRAM设备的方法

    公开(公告)号：US20060039190A1

    公开(公告)日：2006-02-23

    申请号：US11097495

    申请日：2005-04-01

    Applicant: Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

    Inventor： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

    IPC: G11C11/00

    CPC classification number: G11C11/16

    Abstract: A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.

    Abstract translation: 提供了一种写入磁性随机存取存储器（MRAM）器件的方法。 该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。 此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。 读取MTJ的初始磁化状态并与期望的磁化状态进行比较。 当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个 ，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

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