公开(公告)号：US20120199071A1

公开(公告)日：2012-08-09

申请号：US13446732

申请日：2012-04-13

Applicant: KENNETH S. COLLINS ,  Andrew N. Nguyen ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Douglas A. Buchberger, JR. ,  Daniel J. Hoffman ,  Amir Al-Bayati

Inventor： KENNETH S. COLLINS ,  Andrew N. Nguyen ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Douglas A. Buchberger, JR. ,  Daniel J. Hoffman ,  Amir Al-Bayati

IPC: C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32458 ,  H01J37/32412 ,  H01J37/32477

Abstract: Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.

Abstract translation: 本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。 在一个实施例中，提供了一个室。 所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管， 与内部容积流体连通。

公开(公告)号：US08168519B2

公开(公告)日：2012-05-01

申请号：US13101843

申请日：2011-05-05

Applicant: Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

Inventor： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

IPC: H01L21/425

CPC classification number: H01J37/32412 ,  C23C14/48 ,  C23C14/564 ,  H01L21/2236

Abstract: Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

Abstract translation: 在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

公开(公告)号：US20120086464A1

公开(公告)日：2012-04-12

申请号：US13052280

申请日：2011-03-21

Applicant: Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

Inventor： Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: G01R27/04

CPC classification number: G01R27/32 ,  G01R19/0061 ,  H05H1/0081

Abstract: An RE voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber.

Abstract translation: RE电压探头适于具有长同轴电缆，以允许测量装置远离探头连接，而不会使电压测量失真。 RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。

公开(公告)号：US20120034136A1

公开(公告)日：2012-02-09

申请号：US13050481

申请日：2011-03-17

Applicant: Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

Inventor： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

IPC: B01J19/08

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：US07767561B2

公开(公告)日：2010-08-03

申请号：US10896113

申请日：2004-07-20

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: H01L21/425

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01J37/32357 ,  H01L21/2236 ,  H01L21/31612

Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.

Abstract translation: 用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域， 具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

公开(公告)号：US20100025384A1

公开(公告)日：2010-02-04

申请号：US12182342

申请日：2008-07-30

Applicant: VALENTIN N. TODOROW ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

Inventor： VALENTIN N. TODOROW ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

IPC: B23K9/02 ,  B23K9/00

CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/321

Abstract: Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

Abstract translation: 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中， 或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

公开(公告)号：US07642180B2

公开(公告)日：2010-01-05

申请号：US11901969

申请日：2007-09-18

Applicant: Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/44

CPC classification number: H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

Abstract translation: 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US20090321019A1

公开(公告)日：2009-12-31

申请号：US12146189

申请日：2008-06-25

Applicant: Zhigang Chen ,  Shahid Rauf ,  Kartik Ramaswamy

Inventor： Zhigang Chen ,  Shahid Rauf ,  Kartik Ramaswamy

IPC: C23F1/08

CPC classification number: H01J37/32706 ,  H01J37/32091

Abstract: Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.

Abstract translation: 本发明的实施例提供一种在处理室内提供良好RF均匀性的装置。 在一个实施例中，装置包括基板支撑组件，端子和电介质绝缘体。 基板支撑组件具有沿中心轴线形成的中心通道。 提供RF传输线。 RF传输线具有基本上垂直的部分和基本上水平的部分，其中端子耦合到RF传输线的基本水平的部分。 电介质绝缘体围绕RF传输线的大致水平部分。 电介质绝缘体具有端子通过的第一开口。

公开(公告)号：US20090302002A1

公开(公告)日：2009-12-10

申请号：US12395057

申请日：2009-02-27

Applicant: Kenneth Collins ,  Martin Salinas ,  Walter Merry ,  Jie Yuan ,  Andrew Nguyen ,  Kartik Ramaswamy ,  Jennifer Sun ,  Ren-Guan Duan ,  Xiaoming He ,  Nancy Fung

Inventor： Kenneth Collins ,  Martin Salinas ,  Walter Merry ,  Jie Yuan ,  Andrew Nguyen ,  Kartik Ramaswamy ,  Jennifer Sun ,  Ren-Guan Duan ,  Xiaoming He ,  Nancy Fung

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01J37/321 ,  G03F7/427 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/31138

Abstract: A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.

Abstract translation: 提供了从基板上除去聚合物的方法和装置。 在一个实施方案中，用于从基材中除去聚合物的装置包括具有室壁和限定处理体积的室盖的处理室，设置在处理室中的基板支撑组件和耦合到处理室的远程等离子体源 通过形成在室壁内的出口，出口具有指向设置在基板支撑组件上的基板的周边区域的开口，其中远程等离子体源由耐氢物质的材料制成。

公开(公告)号：US20090294062A1

公开(公告)日：2009-12-03

申请号：US12128963

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: C23C16/505 ,  C23F1/02

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32183

Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Abstract translation: 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。