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    METHODS FOR REDUCING PHOTORESIST INTERFERENCE WHEN MONITORING A TARGET LAYER IN A PLASMA PROCESS
    12.
    发明申请
    METHODS FOR REDUCING PHOTORESIST INTERFERENCE WHEN MONITORING A TARGET LAYER IN A PLASMA PROCESS 有权
    在等离子体过程中监测目标层时减少光电干扰的方法

    公开(公告)号：US20120103936A1

    公开(公告)日：2012-05-03

    申请号：US13281989

    申请日：2011-10-26

    申请人： Michael N. Grimbergen

    发明人： Michael N. Grimbergen

    IPC分类号： B05C11/00

    CPC分类号： H01L22/26 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/67253 ,  H01L22/12

    摘要： A method and apparatus for monitoring a target layer in a plasma process having a photoresist layer is provided. The method is useful in removing noise associated with the photoresist layer, and is particularly useful when signals associated with the target layer is weak, such as when detecting an endpoint for a photomask etching process.

    摘要翻译： 提供了一种用于在具有光刻胶层的等离子体工艺中监测目标层的方法和装置。 该方法可用于去除与光致抗蚀剂层相关的噪声，并且当与目标层相关的信号较弱时，例如当检测光掩模蚀刻工艺的端点时，该方法特别有用。

    Process for etching a transparent workpiece including backside endpoint detection steps
    13.
    发明授权
    Process for etching a transparent workpiece including backside endpoint detection steps 有权
    用于蚀刻透明工件的工艺，包括背面端点检测步骤

    公开(公告)号：US08012366B2

    公开(公告)日：2011-09-06

    申请号：US11589652

    申请日：2006-10-30

    申请人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    发明人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    IPC分类号： G01R31/00

    CPC分类号： G03F1/80 ,  H01J37/32963

    摘要： A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.

    摘要翻译： 提供了一种用于在诸如透明基板或掩模或在光波长范围内至少透明的工件的工件上限定图案的方法。 该方法包括在掩模的顶表面上限定光致抗蚀剂图案，该图案包括在该结构的元件之间具有周期性间隔的周期性结构。 该方法还包括将掩模放置在等离子体反应器室中的支撑基座上并在腔室中产生等离子体，以通过光致抗蚀剂图案中的开口蚀刻掩模的顶表面。 该方法还包括通过基座传送光并通过掩模的底表面，同时通过从周期性结构反射的支撑基座光线观察并检测反射光中的干涉图案。 该方法还包括从干涉图案确定在顶表面中蚀刻了周期结构的深度。

    Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
    17.
    发明授权
    Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
    一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器

    公开(公告)号：US07419551B2

    公开(公告)日：2008-09-02

    申请号：US11416547

    申请日：2006-05-03

    申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321 ,  H01L21/68764

    摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

    摘要翻译： 一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座 或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。 在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置， 或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

    Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
    19.
    发明申请
    Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution 审中-公开
    具有背面光学传感器的掩模蚀刻等离子体反应器和蚀刻分布的多次频率控制

    公开(公告)号：US20080099450A1

    公开(公告)日：2008-05-01

    申请号：US11589343

    申请日：2006-10-30

    申请人： Richard Lewington ,  Alexander Paterson ,  Michael N. Grimbergen ,  Ajay Kumar

    发明人： Richard Lewington ,  Alexander Paterson ,  Michael N. Grimbergen ,  Ajay Kumar

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/3299

    摘要： A plasma reactor is provided having multiple frequency control of etch parameters. The reactor includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, and an inductively coupled source power applicator and a capacitively coupled plasma source power applicator. An array of optical fibers extends through the support surface of the workpiece support to view the workpiece through its bottom surface. Optical sensors are coupled to the output ends of the optical fibers. The reactor further includes a controller responsive to the optical sensors for adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.

    摘要翻译： 提供具有对蚀刻参数进行多次频率控制的等离子体反应器。 反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，以及电感耦合源功率施加器和电容耦合等离子体源功率施加器。 光纤阵列延伸穿过工件支撑件的支撑表面，以通过其底部表面观察工件。 光学传感器耦合到光纤的输出端。 反应器还包括响应于光学传感器的控制器，用于通过电感耦合等离子体源功率施加器和电容耦合的等离子体源功率施加器来调节同时耦合到腔室中的等离子体的功率的相对量。

    Chamber having process monitoring window
    20.
    发明授权
    Chamber having process monitoring window 失效
    房间有过程监控窗口

    公开(公告)号：US06712927B1

    公开(公告)日：2004-03-30

    申请号：US09610237

    申请日：2000-07-05

    申请人： Michael N. Grimbergen ,  Xue-Yu Qian

    发明人： Michael N. Grimbergen ,  Xue-Yu Qian

    IPC分类号： C23C1600

    CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32623

    摘要： A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall which may comprise a window or radiation transmitting portion 130 that allows light to be transmitted therethrough. Residue deposits onto the window 130 during processing of the substrate 30 may be reduced. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.

    摘要翻译： 用于处理基板30并监测在基板30上进行的过程的处理室35包括支撑件45，气体分配器和排气85.处理室35具有壁，该壁可以包括窗口或辐射透射部分130 这允许光透射通过。 可以减少在基板30的加工期间在窗口130上的残余沉积物。 在一个版本中，窗口130包括被上覆掩模140覆盖的透明板135，其具有延伸穿过掩模140的至少一个孔145，使得光可以透过孔145和透明板135。