METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL

    公开(公告)号:US20210328093A1

    公开(公告)日:2021-10-21

    申请号:US17170133

    申请日:2021-02-08

    Abstract: The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

    DEEP PHOTOENHANCED WET MATERIAL ETCHING USING HIGH-POWER ULTRAVIOLET LIGHT EMITTING DIODES

    公开(公告)号:US20190088494A1

    公开(公告)日:2019-03-21

    申请号:US16044448

    申请日:2018-07-24

    Abstract: Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

    LIGHT EMITTING DIODE FABRICATED BY EPITAXIAL LIFT-OFF
    15.
    发明申请
    LIGHT EMITTING DIODE FABRICATED BY EPITAXIAL LIFT-OFF 审中-公开
    发光二极管由外延起飞组成

    公开(公告)号:US20130082239A1

    公开(公告)日:2013-04-04

    申请号:US13631516

    申请日:2012-09-28

    CPC classification number: H01L33/0079

    Abstract: A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure.

    Abstract translation: 使用外延剥离工艺制造发光二极管的方法包括在衬底上形成牺牲层,在牺牲层上用外延材料形成发光二极管结构,在发光二极管结构上形成光反射层 ,并且使用蚀刻工艺去除牺牲层,以将衬底与发光二极管结构分离。

    AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
    17.
    发明申请
    AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor 有权
    AlGaAs或InGaP低导通电压GaAs基异质结双极晶体管

    公开(公告)号:US20030032252A1

    公开(公告)日:2003-02-13

    申请号:US10201760

    申请日:2002-07-22

    Abstract: A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.

    Abstract translation: 提供了具有降低的导通电压阈值的异质结双极晶体管。 提供基底间隔层,并且交替地提供具有降低的能隙的发射极层。 基极间隔物或发射极间隔物的能量下降使得异质结双极晶体管实现较低的导通电压阈值。 如果使用发射极层的厚度保持最小以减少异质结双极晶体管中相关的空间电荷复合电流。

    Graded base GaAsSb for high speed GaAs HBT
    18.
    发明申请
    Graded base GaAsSb for high speed GaAs HBT 有权
    分级基GaAsSb用于高速GaAs HBT

    公开(公告)号:US20030025179A1

    公开(公告)日:2003-02-06

    申请号:US10200900

    申请日:2002-07-22

    CPC classification number: H01L29/66318 H01L29/1004 H01L29/7371

    Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a graded base layer formed from antimony. The graded base allows the heterojunction bipolar transistor to establish a quasi-electric field to yield an improved cutoff frequency.

    Abstract translation: 提供具有改善的电流增益截止频率的异质结双极晶体管。 异质结双极晶体管包括由锑形成的分级基底层。 分级基极允许异质结双极晶体管建立准电场以产生改善的截止频率。

    SOLAR SHEETS WITH IMPROVED LIGHT COUPLING AND METHODS FOR THEIR MANUFACTURE AND USE

    公开(公告)号:US20230174254A1

    公开(公告)日:2023-06-08

    申请号:US17962101

    申请日:2022-10-07

    CPC classification number: B64U50/31 H01L31/03926 H01L31/0543 B64U30/10

    Abstract: Systems and methods are presented including solar cells or solar sheets having textured coversheets that provide increased light collection efficiency. Some embodiments include a textured solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The textured solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached. Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible, textured solar cells into a component of a UAV, affixing flexible, textured solar cells to a surface of a UAV, or affixing flexible, textured solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV.

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