公开(公告)号：US06197686B1

公开(公告)日：2001-03-06

申请号：US08082432

申请日：1993-06-28

Applicant: Mitsuru Taguchi ,  Kazuhide Koyama

Inventor： Mitsuru Taguchi ,  Kazuhide Koyama

IPC: H01L2144

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metallization method for filling an Al-based material in a contact hole having a barrier metal structure, in which high barrier characteristics and high step coverage may be achieved simultaneously, is proposed. The present invention is based on two concepts. The first concept is to provide a Ti/TiON/Ti three-layer barrier metal structure and to deposit a layer of the Al-based material by high temperature sputtering. Sufficient barrier characteristics may be provided by the intermediate TiON layer of the three-layer structure. The interface between the Al-based layer and the barrier metal layer is the Ti layer having excellent wetting characteristics with respect to the Al-based layer so that the contact hole can be filled uniformly without forming voids. The second concept is to set the substrate heating temperature during high temperature sputtering to 450 to 550° C. and to set the deposition rate to 0.6 &mgr;m/minute or less. In this manner, moderate Al migration and sufficiently long reaction time may be assured even on a Ti layer which partially reflects the rough surface morphology of the TiON layer for further improving reliability in filling.

Abstract translation: 提出了一种用于在具有阻挡金属结构的接触孔中填充Al基材料的金属化方法，其中可以同时实现高阻挡特性和高阶覆盖。 本发明基于两个概念。 第一个概念是提供Ti / TiON / Ti三层阻挡金属结构，并通过高温溅射沉积Al基材料层。 可以通过三层结构的中间TiON层提供足够的阻挡特性。 Al基层和阻挡金属层之间的界面是相对于Al基层具有优异的润湿特性的Ti层，使得可以均匀地填充接触孔而不形成空隙。 第二个概念是将高温溅射时的基板加热温度设定在450〜550℃，将沉积速度设定为0.6μm/分钟以下。 以这种方式，即使在部分反映TiON层的粗糙表面形态的Ti层上也可以确保适度的Al迁移和足够长的反应时间，以进一步提高填充的可靠性。

公开(公告)号：US5063833A

公开(公告)日：1991-11-12

申请号：US412480

申请日：1989-09-26

Applicant: Junichiro Hara ,  Mitsuru Taguchi ,  Hideo Takahashi

Inventor： Junichiro Hara ,  Mitsuru Taguchi ,  Hideo Takahashi

IPC: B60H1/34 ,  F24F13/15

CPC classification number: F24F13/15 ,  B60H1/345 ,  B60H2001/3471

Abstract: An air spout device of an automotive air conditioning system has a plurality of fins rotatably mounted in a housing. A control member having a plurality of cam grooves which determine the direction of rotation and the angle of rotation of each fin is mounted on the housing. A lever mechanism connects each fin to the control member. One end of each lever mechanism is engaged with a groove of the control member, and the other end of the lever mechanism is connected to one of the fins. Linear movement of the control member is converted by the lever mechanisms into rotation of the fins.

Abstract translation: 汽车空调系统的空气喷口装置具有可旋转地安装在壳体中的多个翅片。 具有确定每个翅片的旋转方向和旋转角度的多个凸轮槽的控制构件安装在壳体上。 杠杆机构将每个翅片连接到控制构件。 每个杠杆机构的一端与控制构件的槽接合，并且杆机构的另一端连接到其中一个翅片。 控制构件的线性移动由杠杆机构转换成翅片的旋转。

公开(公告)号：US06593246B1

公开(公告)日：2003-07-15

申请号：US09525265

申请日：2000-03-14

Applicant: Toshiaki Hasegawa ,  Mitsuru Taguchi ,  Koji Miyata

Inventor： Toshiaki Hasegawa ,  Mitsuru Taguchi ,  Koji Miyata

IPC: H01L21302

CPC classification number: H01L21/76835 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L2221/1031

Abstract: A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.

公开(公告)号：US5719446A

公开(公告)日：1998-02-17

申请号：US797925

申请日：1997-02-12

Applicant: Mitsuru Taguchi ,  Keiichi Maeda ,  Hiroshi Suzawa ,  Hidenori Kenmotsu ,  Teruo Hirayama

Inventor： Mitsuru Taguchi ,  Keiichi Maeda ,  Hiroshi Suzawa ,  Hidenori Kenmotsu ,  Teruo Hirayama

IPC: H01L21/203 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/768 ,  H01L23/12 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41

CPC classification number: H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

Abstract: A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.

Abstract translation: 一种用于半导体器件的多层互连结构。 该结构包括下图案化的金属化层，较高图案化的金属化层和用于电连接这两层的填充孔。 两个金属化层由铝或铝合金通过高温铝溅射或铝回流技术形成。 在接触孔的底部或下部金属化层的表面上形成防吸水层，以防止下部金属化层的材料被吸入上覆的接触孔中。

公开(公告)号：US5308793A

公开(公告)日：1994-05-03

申请号：US916723

申请日：1992-07-22

Applicant: Mitsuru Taguchi ,  Hirofumi Sumi

Inventor： Mitsuru Taguchi ,  Hirofumi Sumi

IPC: H01L21/28 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

CPC classification number: H01L21/28518 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877

Abstract: A method of forming an interconnector configuration includes an arrangement for preventing a Ti type barrier metal associated with an silicone oxide type interlayer insulation membrane, from becoming oxidized and therefore facilitating the burial of high aspect ratio connection holes in a Al layer.The connection holes which are opened in the silicon oxide type interlayer insulation membrane are coated inside with a Ti type barrier metal are apt to be oxidized by oxygen which is released from the interlayer insulating membrane. This oxidation produces a reaction which deteriorates the reaction characteristics with a Al material layer during the burial of the connection holes and produces problems.Accordingly, in order to prevent the oxidation of the barrier metal, a SiNx side wall layer is formed on the sides of the connection hole. The provision of this layer is not limited to the side walls of the connection holes and can be also provided on the upper surface of the interlayer insulation membrane with the same effect. Alternatively, the interlayer insulation membrane per se can be formed of SiNx. In either case, the reaction between the barrier metal and the Al material layer is desirably prevented and highly uniform filling of the through holes with Al can be achieved during the burial process.

Abstract translation: 形成互连器构造的方法包括用于防止与氧化硅类型的层间绝缘膜相关联的Ti型阻挡金属变得氧化并因此有助于Al层中的高纵横比连接孔的掩埋的布置。 在氧化硅类层间绝缘膜中开口的连接孔被内部涂覆有Ti型阻挡金属，容易被从层间绝缘膜释放的氧氧化。 这种氧化产生在连接孔的埋藏期间使Al材料层的反应特性恶化的反应并且产生问题。 因此，为了防止阻挡金属的氧化，在连接孔的侧面形成有SiNx侧壁层。 该层的设置不限于连接孔的侧壁，也可以在层间绝缘膜的上表面上具有相同的效果。 或者，层间绝缘膜本身可以由SiNx形成。 在任一种情况下，期望防止阻挡金属和Al材料层之间的反应，并且在埋入过程中可以实现具有Al的通孔的高度均匀填充。

公开(公告)号：US3992174A

公开(公告)日：1976-11-16

申请号：US532537

申请日：1974-12-13

Applicant: Sigeru Nakamura ,  Mitsuru Taguchi ,  Satoru Naniwada ,  Naoki Ohguri

Inventor： Sigeru Nakamura ,  Mitsuru Taguchi ,  Satoru Naniwada ,  Naoki Ohguri

IPC: G01N30/12 ,  B01D15/08

CPC classification number: G01N30/12 ,  G01N2030/125

Abstract: For use in gas chromatograph, there is provided a specimen capsule which has a sample wrapped in a foil or net of ferromagnetic metal. Also provided is a process for gas chromatography which comprises the steps of placing the specimen capsule in the vaporizer of the gas chromatograph, vaporizing the sample by means of alternative current induction and conducting necessary analysis on the resultant gases.

Abstract translation: 为了在气相色谱仪中使用，提供了一个样品胶囊，其中包含箔或铁磁金属网的样品。 还提供了一种用于气相色谱法的方法，其包括以下步骤：将样品胶囊放置在气相色谱仪的蒸发器中，通过替代电流感应蒸发样品并对所得气体进行必要的分析。

公开(公告)号：US06465342B1

公开(公告)日：2002-10-15

申请号：US09524287

申请日：2000-03-13

Applicant: Mitsuru Taguchi ,  Naoki Komai

Inventor： Mitsuru Taguchi ,  Naoki Komai

IPC: H01L214763

CPC classification number: H01L21/76843 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76816 ,  H01L2221/1031 ,  H01L2221/1036

Abstract: The object of the invention is to solve failure in embedding conductive material by electroplating caused because organic insulating material is deformed by the compressive stress of a barrier metal layer such as tantalum nitride used for grooved interconnection, a groove-used for grooved interconnection is deformed and a seed layer is not fully formed in the groove and to enhance reliability upon interconnection. To achieve the object, a semiconductor device according to the invention is based upon a semiconductor device having a groove formed through a second insulating film over a substrate, a barrier metal layer formed at least on the inner wall of the groove and grooved interconnection embedded inside the groove via the barrier metal layer and is characterized in that a concave portion is continuously or intermittently formed along a groove through a second insulating film within a predetermined interval from grooved interconnection.

Abstract translation: 本发明的目的是解决由于有机绝缘材料被用于沟槽互连的诸如氮化钽之类的阻挡金属层的压缩应力而变形而导致的电镀埋入导电材料的故障，用于沟槽互连的槽变形， 种子层没有完全形成在沟槽中并且在互连时提高可靠性。 为了实现该目的，根据本发明的半导体器件基于半导体器件，该半导体器件具有通过衬底上的第二绝缘膜形成的沟槽，至少形成在槽的内壁上的阻挡金属层和嵌入在内部的沟槽互连 所述槽通过所述阻挡金属层，其特征在于，在与槽互连的预定间隔内，通过第二绝缘膜沿凹槽连续地或间歇地形成凹部。

公开(公告)号：US6051490A

公开(公告)日：2000-04-18

申请号：US976314

申请日：1997-11-21

Applicant: Mitsuru Taguchi ,  Keiichi Maeda

Inventor： Mitsuru Taguchi ,  Keiichi Maeda

IPC: H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L21/4763

CPC classification number: H01L21/76831 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

Abstract: A method of forming wirings which includes forming a film of a silicon-containing metal layer at a high temperature on an underlying metal, thereby forming a silicon alloy layer which includes the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer, occurrence of Si nodules can be eliminated to obtain wirings of high reliability.

Abstract translation: 一种形成布线的方法，其包括在下面的金属上形成高温下的含硅金属层的膜，从而在成膜期间形成包括下面的金属和含硅金属的硅合金层。 在通过含硅金属层形成布线的情况下，可以消除Si结节的发生，从而获得高可靠性的布线。

公开(公告)号：US5137491A

公开(公告)日：1992-08-11

申请号：US708054

申请日：1991-05-30

Applicant: Yuji Ishihara ,  Mitsuru Taguchi

Inventor： Yuji Ishihara ,  Mitsuru Taguchi

IPC: B60H1/24 ,  B60H1/34

CPC classification number: B60H1/3407 ,  B60H1/247

Abstract: An air spout device for an air conditioning system comprises a duct having an intake portion and a ventilator spout. A plurality of guide vanes are arranged in the duct to define passages, and a plurality of dampers are arranged between the intake portion and the plurality of guide vanes to selectively open and close the passages, the plurality of dampers being rotatable with its shaft to assume concentration blow, diffusion blow, and avoidance blow modes. A blow mode selecting mechanism is operatively connected to the shaft to allow the plurality of dampers to assume the concentration blow, diffusion blow, and avoidance blow modes.

Abstract translation: 用于空调系统的空气喷口装置包括具有进气部分和通风机喷口的管道。 多个引导叶片布置在管道中以限定通道，并且多个阻尼器布置在进气部分和多个导向叶片之间，以选择性地打开和关闭通道，多个阻尼器可随轴转动而呈现 集中打击，扩散打击和回避吹模式。 吹扫模式选择机构可操作地连接到轴，以允许多个阻尼器采取浓度吹扫，扩散吹扫和回避吹扫模式。

公开(公告)号：USRE40748E1

公开(公告)日：2009-06-16

申请号：US10954148

申请日：2004-09-30

Applicant: Toshiaki Hasegawa ,  Mitsuru Taguchi ,  Koji Miyata

Inventor： Toshiaki Hasegawa ,  Mitsuru Taguchi ,  Koji Miyata

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/31 ,  H01L21/4763

CPC classification number: H01L21/76835 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L2221/1031

Abstract: A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.

Abstract translation: 提供一种用于形成高可靠性布线结构的半导体器件的制造方法，其解决了在布线之间的层间电介质中使用干凝胶或氟树脂时出现的问题，以降低布线电容，并且解决了在未对准上出现的问题。 一种包含含有干凝胶膜或氟树脂膜的层间电介质的半导体器件的制造方法，其特征在于，在包含由有机膜形成的层间电介质的下层的层间电介质和上层 由干燥凝胶膜或氟树脂膜形成的层间电介质，作为用于通过蚀刻层间电介质形成通孔接触孔的蚀刻掩模的第一掩模，以及在第一掩模上形成第二掩模的步骤 掩模，其包括与第一掩模不同的材料，作为用于通过蚀刻级间电介质形成布线槽的蚀刻掩模。