公开(公告)号：US5063833A

公开(公告)日：1991-11-12

申请号：US412480

申请日：1989-09-26

申请人： Junichiro Hara ,  Mitsuru Taguchi ,  Hideo Takahashi

发明人： Junichiro Hara ,  Mitsuru Taguchi ,  Hideo Takahashi

IPC分类号： B60H1/34 ,  F24F13/15

CPC分类号： F24F13/15 ,  B60H1/345 ,  B60H2001/3471

摘要： An air spout device of an automotive air conditioning system has a plurality of fins rotatably mounted in a housing. A control member having a plurality of cam grooves which determine the direction of rotation and the angle of rotation of each fin is mounted on the housing. A lever mechanism connects each fin to the control member. One end of each lever mechanism is engaged with a groove of the control member, and the other end of the lever mechanism is connected to one of the fins. Linear movement of the control member is converted by the lever mechanisms into rotation of the fins.

摘要翻译： 汽车空调系统的空气喷口装置具有可旋转地安装在壳体中的多个翅片。 具有确定每个翅片的旋转方向和旋转角度的多个凸轮槽的控制构件安装在壳体上。 杠杆机构将每个翅片连接到控制构件。 每个杠杆机构的一端与控制构件的槽接合，并且杆机构的另一端连接到其中一个翅片。 控制构件的线性移动由杠杆机构转换成翅片的旋转。

公开(公告)号：US06465342B1

公开(公告)日：2002-10-15

申请号：US09524287

申请日：2000-03-13

申请人： Mitsuru Taguchi ,  Naoki Komai

发明人： Mitsuru Taguchi ,  Naoki Komai

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76816 ,  H01L2221/1031 ,  H01L2221/1036

摘要： The object of the invention is to solve failure in embedding conductive material by electroplating caused because organic insulating material is deformed by the compressive stress of a barrier metal layer such as tantalum nitride used for grooved interconnection, a groove-used for grooved interconnection is deformed and a seed layer is not fully formed in the groove and to enhance reliability upon interconnection. To achieve the object, a semiconductor device according to the invention is based upon a semiconductor device having a groove formed through a second insulating film over a substrate, a barrier metal layer formed at least on the inner wall of the groove and grooved interconnection embedded inside the groove via the barrier metal layer and is characterized in that a concave portion is continuously or intermittently formed along a groove through a second insulating film within a predetermined interval from grooved interconnection.

摘要翻译： 本发明的目的是解决由于有机绝缘材料被用于沟槽互连的诸如氮化钽之类的阻挡金属层的压缩应力而变形而导致的电镀埋入导电材料的故障，用于沟槽互连的槽变形， 种子层没有完全形成在沟槽中并且在互连时提高可靠性。 为了实现该目的，根据本发明的半导体器件基于半导体器件，该半导体器件具有通过衬底上的第二绝缘膜形成的沟槽，至少形成在槽的内壁上的阻挡金属层和嵌入在内部的沟槽互连 所述槽通过所述阻挡金属层，其特征在于，在与槽互连的预定间隔内，通过第二绝缘膜沿凹槽连续地或间歇地形成凹部。

公开(公告)号：US6051490A

公开(公告)日：2000-04-18

申请号：US976314

申请日：1997-11-21

申请人： Mitsuru Taguchi ,  Keiichi Maeda

发明人： Mitsuru Taguchi ,  Keiichi Maeda

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

摘要： A method of forming wirings which includes forming a film of a silicon-containing metal layer at a high temperature on an underlying metal, thereby forming a silicon alloy layer which includes the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer, occurrence of Si nodules can be eliminated to obtain wirings of high reliability.

摘要翻译： 一种形成布线的方法，其包括在下面的金属上形成高温下的含硅金属层的膜，从而在成膜期间形成包括下面的金属和含硅金属的硅合金层。 在通过含硅金属层形成布线的情况下，可以消除Si结节的发生，从而获得高可靠性的布线。

公开(公告)号：US5137491A

公开(公告)日：1992-08-11

申请号：US708054

申请日：1991-05-30

申请人： Yuji Ishihara ,  Mitsuru Taguchi

发明人： Yuji Ishihara ,  Mitsuru Taguchi

IPC分类号： B60H1/24 ,  B60H1/34

CPC分类号： B60H1/3407 ,  B60H1/247

摘要： An air spout device for an air conditioning system comprises a duct having an intake portion and a ventilator spout. A plurality of guide vanes are arranged in the duct to define passages, and a plurality of dampers are arranged between the intake portion and the plurality of guide vanes to selectively open and close the passages, the plurality of dampers being rotatable with its shaft to assume concentration blow, diffusion blow, and avoidance blow modes. A blow mode selecting mechanism is operatively connected to the shaft to allow the plurality of dampers to assume the concentration blow, diffusion blow, and avoidance blow modes.

摘要翻译： 用于空调系统的空气喷口装置包括具有进气部分和通风机喷口的管道。 多个引导叶片布置在管道中以限定通道，并且多个阻尼器布置在进气部分和多个导向叶片之间，以选择性地打开和关闭通道，多个阻尼器可随轴转动而呈现 集中打击，扩散打击和回避吹模式。 吹扫模式选择机构可操作地连接到轴，以允许多个阻尼器采取浓度吹扫，扩散吹扫和回避吹扫模式。

公开(公告)号：US06593246B1

公开(公告)日：2003-07-15

申请号：US09525265

申请日：2000-03-14

申请人： Toshiaki Hasegawa ,  Mitsuru Taguchi ,  Koji Miyata

发明人： Toshiaki Hasegawa ,  Mitsuru Taguchi ,  Koji Miyata

IPC分类号： H01L21302

CPC分类号： H01L21/76835 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/31695 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L2221/1031

摘要： A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.

公开(公告)号：US5719446A

公开(公告)日：1998-02-17

申请号：US797925

申请日：1997-02-12

申请人： Mitsuru Taguchi ,  Keiichi Maeda ,  Hiroshi Suzawa ,  Hidenori Kenmotsu ,  Teruo Hirayama

发明人： Mitsuru Taguchi ,  Keiichi Maeda ,  Hiroshi Suzawa ,  Hidenori Kenmotsu ,  Teruo Hirayama

IPC分类号： H01L21/203 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/768 ,  H01L23/12 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41

CPC分类号： H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

摘要： A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.

摘要翻译： 一种用于半导体器件的多层互连结构。 该结构包括下图案化的金属化层，较高图案化的金属化层和用于电连接这两层的填充孔。 两个金属化层由铝或铝合金通过高温铝溅射或铝回流技术形成。 在接触孔的底部或下部金属化层的表面上形成防吸水层，以防止下部金属化层的材料被吸入上覆的接触孔中。

公开(公告)号：US5308793A

公开(公告)日：1994-05-03

申请号：US916723

申请日：1992-07-22

申请人： Mitsuru Taguchi ,  Hirofumi Sumi

发明人： Mitsuru Taguchi ,  Hirofumi Sumi

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877

摘要： A method of forming an interconnector configuration includes an arrangement for preventing a Ti type barrier metal associated with an silicone oxide type interlayer insulation membrane, from becoming oxidized and therefore facilitating the burial of high aspect ratio connection holes in a Al layer.The connection holes which are opened in the silicon oxide type interlayer insulation membrane are coated inside with a Ti type barrier metal are apt to be oxidized by oxygen which is released from the interlayer insulating membrane. This oxidation produces a reaction which deteriorates the reaction characteristics with a Al material layer during the burial of the connection holes and produces problems.Accordingly, in order to prevent the oxidation of the barrier metal, a SiNx side wall layer is formed on the sides of the connection hole. The provision of this layer is not limited to the side walls of the connection holes and can be also provided on the upper surface of the interlayer insulation membrane with the same effect. Alternatively, the interlayer insulation membrane per se can be formed of SiNx. In either case, the reaction between the barrier metal and the Al material layer is desirably prevented and highly uniform filling of the through holes with Al can be achieved during the burial process.

摘要翻译： 形成互连器构造的方法包括用于防止与氧化硅类型的层间绝缘膜相关联的Ti型阻挡金属变得氧化并因此有助于Al层中的高纵横比连接孔的掩埋的布置。 在氧化硅类层间绝缘膜中开口的连接孔被内部涂覆有Ti型阻挡金属，容易被从层间绝缘膜释放的氧氧化。 这种氧化产生在连接孔的埋藏期间使Al材料层的反应特性恶化的反应并且产生问题。 因此，为了防止阻挡金属的氧化，在连接孔的侧面形成有SiNx侧壁层。 该层的设置不限于连接孔的侧壁，也可以在层间绝缘膜的上表面上具有相同的效果。 或者，层间绝缘膜本身可以由SiNx形成。 在任一种情况下，期望防止阻挡金属和Al材料层之间的反应，并且在埋入过程中可以实现具有Al的通孔的高度均匀填充。

公开(公告)号：US3992174A

公开(公告)日：1976-11-16

申请号：US532537

申请日：1974-12-13

申请人： Sigeru Nakamura ,  Mitsuru Taguchi ,  Satoru Naniwada ,  Naoki Ohguri

发明人： Sigeru Nakamura ,  Mitsuru Taguchi ,  Satoru Naniwada ,  Naoki Ohguri

IPC分类号： G01N30/12 ,  B01D15/08

CPC分类号： G01N30/12 ,  G01N2030/125

摘要： For use in gas chromatograph, there is provided a specimen capsule which has a sample wrapped in a foil or net of ferromagnetic metal. Also provided is a process for gas chromatography which comprises the steps of placing the specimen capsule in the vaporizer of the gas chromatograph, vaporizing the sample by means of alternative current induction and conducting necessary analysis on the resultant gases.

摘要翻译： 为了在气相色谱仪中使用，提供了一个样品胶囊，其中包含箔或铁磁金属网的样品。 还提供了一种用于气相色谱法的方法，其包括以下步骤：将样品胶囊放置在气相色谱仪的蒸发器中，通过替代电流感应蒸发样品并对所得气体进行必要的分析。

公开(公告)号：US06878632B2

公开(公告)日：2005-04-12

申请号：US10149481

申请日：2001-10-12

申请人： Takeshi Nogami ,  Naoki Komai ,  Hideyuki Kito ,  Mitsuru Taguchi

发明人： Takeshi Nogami ,  Naoki Komai ,  Hideyuki Kito ,  Mitsuru Taguchi

IPC分类号： H01L23/52 ,  H01L21/288 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device capable of suppressing diffusion of copper at an interface between a copper wire and a cap film to enhance an electromigration resistance to ensure reliability of the copper wire, and a manufacturing method thereof are provided. The semiconductor device according to the present invention comprises an insulating film (12) formed on a substrate (11), a concave portion (13) (for example, a groove) formed in the insulating film, a conductive layer (15) embedded in the concave portion through a barrier layer (14), and a cobalt tungsten phosphorus coating (16) to connect with the barrier layer on the side of the conductive layer and to coat the conductive layer on the opening side of the concave portion.

摘要翻译： 一种半导体器件及其制造方法，其能够抑制铜线与盖膜之间的界面处铜的扩散，提高电迁移性，确保铜线的可靠性。 根据本发明的半导体器件包括形成在基板（11）上的绝缘膜（12），形成在绝缘膜中的凹部（13）（例如，沟槽），嵌入在绝缘膜 通过阻挡层（14）的凹部，以及与导电层一侧的阻挡层连接的钴钨磷涂层（16），并且在凹部的开口侧涂布导电层。

公开(公告)号：US06736699B2

公开(公告)日：2004-05-18

申请号：US09922135

申请日：2001-08-03

申请人： Takeshi Nogami ,  Naoki Komai ,  Hideyuki Kito ,  Mitsuru Taguchi

发明人： Takeshi Nogami ,  Naoki Komai ,  Hideyuki Kito ,  Mitsuru Taguchi

IPC分类号： B24B4900

CPC分类号： B24B37/013 ,  B24B49/04 ,  C25F3/16 ,  H01L21/67253 ,  Y10S451/908

摘要： An electrolytic polishing apparatus for electrolytic-polishing a conductive film subject to formed on a substrate including a resistance measuring unit for measuring the resistance of the film. The electrolytic polishing apparatus may also include a termination point detecting portion for detecting a termination point of polishing by reading a variation of the resistance value measured by the resistance measuring unit, or a polishing control portion for terminating electrolytic polishing on the basis of the termination point of polishing detected by the termination point detecting portion.

摘要翻译： 一种电解抛光装置，用于对形成在包括用于测量膜的电阻的电阻测量单元的基板上形成的导电膜进行电解抛光。 电解抛光装置还可以包括终止点检测部分，用于通过读取由电阻测量单元测量的电阻值的变化来检测终止点，或者基于终止点来终止电解抛光的抛光控制部分 由终端点检测部分检测到的抛光。