公开(公告)号：US08691634B2

公开(公告)日：2014-04-08

申请号：US13960971

申请日：2013-08-07

申请人： Ahmed Elasser ,  Stephen Daley Arthur ,  Alexey Vert ,  Stanislav Ivanovich Soloviev ,  Peter Almern Losee

发明人： Ahmed Elasser ,  Stephen Daley Arthur ,  Alexey Vert ,  Stanislav Ivanovich Soloviev ,  Peter Almern Losee

IPC分类号： H01L21/332

CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。

公开(公告)号：US20140070229A1

公开(公告)日：2014-03-13

申请号：US13610614

申请日：2012-09-11

申请人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

发明人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC分类号： H01L29/20 ,  H01L21/768 ,  H01L29/161

CPC分类号： H01L29/0661 ,  H01L21/02107 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/87

摘要： An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction.

摘要翻译： 电气装置包括设置在基底层顶部的阻挡层，其中阻挡层和基底层各自是宽带隙半导体，并且阻挡层和基底层在电气装置中形成掩埋结。 该装置包括设置在阻挡层的表面处的端接特征和靠近端接特征设置的填充沟槽。 填充的沟槽延伸穿过阻挡层以到达衬底层并且被配置为将与掩埋结相关联的电势引导到设置在阻挡层表面附近的端接特征以终止掩埋结。

公开(公告)号：US08278711B2

公开(公告)日：2012-10-02

申请号：US12952418

申请日：2010-11-23

申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

IPC分类号： H01L29/66

CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

摘要： A substrate having semiconductor material and a surface that supports a gate electrode and defines a surface normal direction is provided. The substrate can include a drift region including a first dopant type. A well region can be disposed adjacent to the drift region and proximal to the surface, and can include a second dopant type. A termination extension region can be disposed adjacent to the well region and extend away from the gate electrode, and can have an effective concentration of second dopant type that is generally less than that in the well region. An adjust region can be disposed between the surface and at least part of the termination extension region. An effective concentration of second dopant type may generally decrease when moving from the termination extension region into the adjust region along the surface normal direction.

摘要翻译： 提供具有半导体材料的基板和支撑栅电极并限定表面法线方向的表面。 衬底可以包括包括第一掺杂剂类型的漂移区域。 阱区域可以布置成与漂移区域相邻并且靠近表面，并且可以包括第二掺杂剂类型。 端接延伸区域可以邻近阱区域设置并且远离栅电极延伸，并且可以具有通常小于阱区域中的第二掺杂剂类型的有效浓度。 可以在表面和终止延伸区域的至少一部分之间设置调整区域。 当从终止延伸区域沿着表面法线方向移动到调整区域中时，第二掺杂剂类型的有效浓度通常可以降低。

公开(公告)号：US20110024765A1

公开(公告)日：2011-02-03

申请号：US12533712

申请日：2009-07-31

申请人： Peter Almern Losee ,  Stephen Daley Arthur ,  Dale Marius Brown ,  Kevin Sean Matocha ,  Ravinuthala Ramakrishna Rao

发明人： Peter Almern Losee ,  Stephen Daley Arthur ,  Dale Marius Brown ,  Kevin Sean Matocha ,  Ravinuthala Ramakrishna Rao

IPC分类号： H01L29/12 ,  H01L21/04 ,  H01L29/78

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/0646 ,  H01L29/1608

摘要： There are provided semiconductor structures and devices comprising silicon carbide (SiC) and methods for making the same. The structures and devices comprise a base or shielding layer, channel and surface layer, all desirably formed via ion implantation. As a result, the structures and devices provided herein are hard, “normally off” devices, i.e., exhibiting threshold voltages of greater than about 3 volts.

摘要翻译： 提供了包括碳化硅（SiC）的半导体结构和器件及其制造方法。 结构和器件包括基底或屏蔽层，通道和表面层，所有这些都希望通过离子注入形成。 结果，本文提供的结构和装置是硬的“常关”装置，即呈现大于约3伏特的阈值电压。

公开(公告)号：US20100308340A1

公开(公告)日：2010-12-09

申请号：US12478106

申请日：2009-06-04

申请人： Vinayak Tilak ,  Peter Almern Losee

发明人： Vinayak Tilak ,  Peter Almern Losee

IPC分类号： H01L29/24

CPC分类号： H01L29/808 ,  H01L29/1066 ,  H01L29/36 ,  H01L29/66068

摘要： Provided is a device that includes a semiconductor body having a surface. Source and drain regions with effective dopant populations of a first polarity can be disposed adjacent to the surface and spaced apart from one another. A channel region with an effective dopant population of the first polarity can extend between the source and drain regions while being spaced apart from the surface. A gate region with an effective dopant population of a second polarity and first effective dopant density can extend between the source and drain regions and be disposed between the channel region and the surface. A gate contact region can be disposed between the source and drain regions and adjacent to the surface. The gate contact region can have an effective dopant population of the second polarity and a second effective dopant density greater than the first effective dopant density.

摘要翻译： 提供一种包括具有表面的半导体主体的装置。 具有第一极性的有效掺杂剂种群的源极和漏极区域可以被布置成与表面相邻并且彼此间隔开。 具有第一极性的有效掺杂剂群的沟道区可以在源极和漏极区之间延伸，同时与表面间隔开。 具有第二极性和第一有效掺杂剂浓度的有效掺杂剂群的栅极区域可以在源极和漏极区域之间延伸并且设置在沟道区域和表面之间。 栅极接触区域可以设置在源极和漏极区域之间并且邻近表面。 栅极接触区域可以具有第二极性的有效掺杂剂群体和大于第一有效掺杂剂密度的第二有效掺杂剂密度。

公开(公告)号：US09633998B2

公开(公告)日：2017-04-25

申请号：US13613848

申请日：2012-09-13

申请人： Stanislav Ivanovich Soloviev ,  Ahmed Elasser ,  Alexander Viktorovich Bolotnikov ,  Alexey Vert ,  Peter Almern Losee

发明人： Stanislav Ivanovich Soloviev ,  Ahmed Elasser ,  Alexander Viktorovich Bolotnikov ,  Alexey Vert ,  Peter Almern Losee

IPC分类号： H01L29/15 ,  H01L27/06 ,  H01L27/08

CPC分类号： H01L27/0676 ,  H01L27/0817 ,  H01L27/1443 ,  H01L27/14609 ,  H01L29/66363 ,  H01L29/7412

摘要： A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

公开(公告)号：US09006027B2

公开(公告)日：2015-04-14

申请号：US13610614

申请日：2012-09-11

申请人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

发明人： Zachary Matthew Stum ,  Ahmed Elasser ,  Stephen Daley Arthur ,  Stanislav I. Soloviev ,  Peter Almern Losee

IPC分类号： H01L21/00 ,  H01L31/0328 ,  H01L29/06 ,  H01L29/74 ,  H01L29/87 ,  H01L21/02 ,  H01L29/73 ,  H01L29/739 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/0661 ,  H01L21/02107 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/87

摘要： An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction.

摘要翻译： 电气装置包括设置在基底层顶部的阻挡层，其中阻挡层和基底层各自是宽带隙半导体，并且阻挡层和基底层在电气装置中形成掩埋结。 该装置包括设置在阻挡层的表面处的端接特征和靠近端接特征设置的填充沟槽。 填充的沟槽延伸穿过阻挡层以到达衬底层并且被配置为将与掩埋结相关联的电势引导到设置在阻挡层表面附近的端接特征以终止掩埋结。

公开(公告)号：US20140070231A1

公开(公告)日：2014-03-13

申请号：US13613848

申请日：2012-09-13

申请人： Stanislav Ivanovich Soloviev ,  Ahmed Elasser ,  Alexander Viktorovich Bolotnikov ,  Alexey Vert ,  Peter Almern Losee

发明人： Stanislav Ivanovich Soloviev ,  Ahmed Elasser ,  Alexander Viktorovich Bolotnikov ,  Alexey Vert ,  Peter Almern Losee

IPC分类号： H01L29/74 ,  H01L29/24 ,  H01L21/332 ,  H01L29/20

CPC分类号： H01L27/0676 ,  H01L27/0817 ,  H01L27/1443 ,  H01L27/14609 ,  H01L29/66363 ,  H01L29/7412

摘要： A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

摘要翻译： 提供半导体器件。 半导体器件包括雪崩光电二极管单元和晶闸管单元。 雪崩光电二极管单元被配置为接收入射光以产生触发电流并且包括宽带隙半导体。 晶闸管单元被配置为被触发电流激活到导电状态。 还提出了半导体器件和制造半导体器件的方法。

公开(公告)号：US08536641B1

公开(公告)日：2013-09-17

申请号：US13597299

申请日：2012-08-29

申请人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

发明人： Ramakrishna Rao ,  Stephen Daley Arthur ,  Peter Almern Losee ,  Kevin Dean Matocha

IPC分类号： H01L29/66

CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7811

摘要： A semiconductor device includes a substrate comprising a semiconductor material. The substrate has a surface that defines a surface normal direction and includes a P-N junction comprising an interface between a first region and a second region, where the first (second) region includes a first (second) dopant type, so as to have a first (second) conductivity type. The substrate includes a termination extension region disposed adjacent to the P-N junction and having an effective concentration of the second dopant type that is generally the effective concentration of the second dopant type in the second doped region. The substrate includes an adjust region disposed adjacent to the surface and between the surface and at least part of the termination extension region, where the effective concentration of the second dopant type generally decreases when moving from the termination extension region into the adjust region along the surface normal direction.

摘要翻译： 半导体器件包括包含半导体材料的衬底。 衬底具有限定表面法线方向的表面，并且包括PN结，其包括在第一区域和第二区域之间的界面，其中第一（第二）区域包括第一（第二）掺杂剂类型，以便具有第一 （第二）导电类型。 衬底包括邻近P-N结设置并且具有通常为第二掺杂区域中的第二掺杂剂类型的有效浓度的第二掺杂剂类型的有效浓度的终止延伸区域。 衬底包括与表面相邻并且在表面与终止延伸区域的至少一部分之间布置的调节区域，其中当从端接延伸区域沿着表面移动到调节区域中时，第二掺杂剂类型的有效浓度通常降低 正常方向

公开(公告)号：US08536617B2

公开(公告)日：2013-09-17

申请号：US13328796

申请日：2011-12-16

申请人： Alexey Vert ,  Ahmed Elasser ,  Arthur Stephen Daley ,  Stanislav I Soloviev ,  Peter Almern Losee

发明人： Alexey Vert ,  Ahmed Elasser ,  Arthur Stephen Daley ,  Stanislav I Soloviev ,  Peter Almern Losee

IPC分类号： H01L31/101

CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。