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46 条记录 (耗时 0.022 秒)

    Memory cell with radial barrier
    12.
    发明授权
    Memory cell with radial barrier 失效
    具有径向屏障的记忆体

    公开(公告)号：US08043732B2

    公开(公告)日：2011-10-25

    申请号：US12268638

    申请日：2008-11-11

    申请人： Paul E. Anderson ,  Song S. Xue

    发明人： Paul E. Anderson ,  Song S. Xue

    IPC分类号： G11B5/39 ,  H01F10/08 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

    摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。

    Spray drying of metallized explosive
    15.
    发明授权
    Spray drying of metallized explosive 有权
    喷雾干燥金属化炸药

    公开(公告)号：US09212102B1

    公开(公告)日：2015-12-15

    申请号：US14742011

    申请日：2015-06-17

    申请人： Paul E. Anderson ,  Hongwei Qiu ,  Victor Stepanov

    发明人： Paul E. Anderson ,  Hongwei Qiu ,  Victor Stepanov

    IPC分类号： C06B45/00 ,  C06B45/18 ,  C06B25/34 ,  D03D23/00 ,  D03D43/00 ,  C06B45/32

    CPC分类号： C06B45/32 ,  C06B21/0091 ,  C06B33/08 ,  C06B45/18

    摘要： An insensitive crystalline high explosive molding powder, usable as a booster HE. The subject insensitive crystalline high explosive molding powder being manufactured by adding the crystalline high explosive, metal or semi-metal particles and a polymer or wax based binder to a solvent to form a solution, spray drying the solution to drive off the solvent, thereby co-precipitating the HE and binder to form granules in which the crystals of HE and metal particles are uniformly distributed in the binder.

    摘要翻译： 不敏感的结晶高爆炸成型粉末，可用作助剂HE。 通过将结晶高爆炸性金属或半金属颗粒和聚合物或蜡基粘合剂加入到溶剂中以形成溶液来制造主体不敏感的结晶高爆炸成型粉末，喷雾干燥溶液以驱除溶剂，由此共混 - 沉淀HE和粘合剂以形成其中HE和金属颗粒的晶体均匀分布在粘合剂中的颗粒。

    Low Temperature Deposition of Amorphous Thin Films
    18.
    发明申请
    Low Temperature Deposition of Amorphous Thin Films 审中-公开
    非晶薄膜的低温沉积

    公开(公告)号：US20110005920A1

    公开(公告)日：2011-01-13

    申请号：US12502139

    申请日：2009-07-13

    申请人： Ivan Petrov Ivanov ,  Antoine Khoueir ,  Wei Tian ,  Paul E. Anderson ,  Lili Jia ,  Yongchul Ahn ,  Michael Xuefei Tang ,  Yang Dong

    发明人： Ivan Petrov Ivanov ,  Antoine Khoueir ,  Wei Tian ,  Paul E. Anderson ,  Lili Jia ,  Yongchul Ahn ,  Michael Xuefei Tang ,  Yang Dong

    IPC分类号： C23C14/35

    CPC分类号： C23C14/0641 ,  C23C14/354 ,  C23C14/541 ,  H01J37/3408 ,  H01J37/3467

    摘要： Various embodiments of the present invention are generally directed to an apparatus and method for low temperature physical vapor deposition (PVD) of an amorphous thin film layer of material onto a substrate. A PVD chamber is configured to support a substrate and has a cathode target with a layer of sputtering material thereon, an anode shield, and a magnetron assembly adjacent the target. A high impulse power magnetron sputtering (HiPIMS) power supply is coupled to the PVD chamber, the power supply having a charging circuit and a charge storage device. The power supply applies relatively high energy, low duty cycle pulses to the magnetron assembly to sputter, via self ionizing plasma, relatively low energy ions from the layer of sputtering material to deposit an amorphous thin film layer onto the substrate.

    摘要翻译： 本发明的各种实施方案通常涉及用于材料的非晶薄膜层的低温物理气相沉积（PVD）的衬底上的装置和方法。 PVD室被配置为支撑衬底并且具有阴极靶，其上具有溅射材料层，阳极屏蔽和与靶相邻的磁控管组件。 高冲击功率磁控溅射（HiPIMS）电源耦合到PVD室，电源具有充电电路和电荷存储装置。 电源对磁控管组件施加相当高的能量，低占空比脉冲，以通过自电离等离子体溅射来自溅射材料层的相对低能量的离子，以将非晶薄膜层沉积到衬底上。

    Side flux guide for current perpendicular to plane magnetoresistive transducer
    19.
    发明授权
    Side flux guide for current perpendicular to plane magnetoresistive transducer 失效
    用于垂直于平面磁阻换能器的电流的侧向通量

    公开(公告)号：US06801410B2

    公开(公告)日：2004-10-05

    申请号：US10247124

    申请日：2002-09-19

    申请人： Song Sheng Xue ,  Paul E. Anderson ,  Patrick Joseph Ryan

    发明人： Song Sheng Xue ,  Paul E. Anderson ,  Patrick Joseph Ryan

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3146 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929

    摘要： A transducing head according to the present invention includes a pair of electrodes, a pair of biasing elements and a magnetoresistive sensor. The magnetoresistive sensor is positioned between the pair of electrodes. The magnetoresistive sensor includes a pair of flux guides and a free layer positioned substantially co-planar with and between the pair of flux guides. The pair of electrodes are for providing a sense current to the free layer in a direction substantially perpendicular to a plane of the free layer. The pair of biasing elements are positioned on opposing sides of the magnetoresistive sensor for providing longitudinal bias to the free layer.

    摘要翻译： 根据本发明的转换头包括一对电极，一对偏置元件和磁阻传感器。 磁阻传感器位于一对电极之间。 磁阻传感器包括一对磁通引导件和与该对通量引导件之间基本上共平面的自由层。 该对电极用于在基本上垂直于自由层的平面的方向上向自由层提供感测电流。 一对偏置元件位于磁阻传感器的相对侧上，用于向自由层提供纵向偏置。

    Spin valve read element using a permanent magnet to form a pinned layer
    20.
    发明授权
    Spin valve read element using a permanent magnet to form a pinned layer 失效
    旋转阀读取元件使用永磁体形成固定层

    公开(公告)号：US06754054B2

    公开(公告)日：2004-06-22

    申请号：US10270873

    申请日：2002-10-15

    申请人： Michael A. Seigler ,  Paul E. Anderson ,  Alexander M. Shukh

    发明人： Michael A. Seigler ,  Paul E. Anderson ,  Alexander M. Shukh

    IPC分类号： G11B527

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/0008 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3268

    摘要： A spin valve read element for use with, for example, magnetic recording media, includes a permanent magnet as one of the multilayers that make up the spin valve. The spin valve may also include a pinned ferromagnetic layer, an antiferromagnetic coupling inducing layer, a reference ferromagnetic layer, an electroconductive layer, and/or a free ferromagnetic layer. Epitaxy breaking layers may also be advantageously positioned within the spin valve. The multilayers of the spin valve may be constructed as a current perpendicular to the plane or a current parallel to the plane type spin valve.

    摘要翻译： 用于例如磁记录介质的自旋阀读取元件包括作为构成自旋阀的多层之一的永磁体。 自旋阀还可以包括钉扎铁磁层，反铁磁耦合诱导层，参考铁磁层，导电层和/或自由铁磁层。 外延破裂层也可有利地定位在自旋阀内。 自旋阀的多层可以被构造成垂直于平面的电流或平行于平面型自旋阀的电流。