公开(公告)号：US06638143B2

公开(公告)日：2003-10-28

申请号：US09737414

申请日：2000-12-14

Applicant: Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346 ,  H01L21/67046

Abstract: Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

公开(公告)号：US06632124B2

公开(公告)日：2003-10-14

申请号：US10339959

申请日：2003-01-10

Applicant: Bret W. Adams ,  Boguslaw A. Swedek ,  Rajeev Bajaj ,  Savitha Nanjangud ,  Andreas Norbert Wiswesser ,  Stan D. Tsai ,  David A. Chan ,  Fred C. Redeker ,  Manoocher Birang

Inventor： Bret W. Adams ,  Boguslaw A. Swedek ,  Rajeev Bajaj ,  Savitha Nanjangud ,  Andreas Norbert Wiswesser ,  Stan D. Tsai ,  David A. Chan ,  Fred C. Redeker ,  Manoocher Birang

IPC: B24B100

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

Abstract translation: 一种用于两步抛光工艺的光学监视系统，其为多个径向区域中的每一个产生反射迹线。 当任何反射迹线表示金属层的初始间隙时，CMP设备可以从高选择性浆料切换到低选择性浆料，并且当所有反射迹线表示氧化物层已经完全暴露时，抛光可能停止。

公开(公告)号：US06629881B1

公开(公告)日：2003-10-07

申请号：US09505902

申请日：2000-02-17

Applicant: Fred C. Redeker ,  Rajeev Bajaj ,  Frank A. Bose ,  A. Jason Whitby

Inventor： Fred C. Redeker ,  Rajeev Bajaj ,  Frank A. Bose ,  A. Jason Whitby

IPC: B24B5700

CPC classification number: B24B37/04 ,  B24B57/02

Abstract: A fluid delivery apparatus and method for use in a chemical mechanical polishing system is provided. The delivery rate of a fluid onto a pad is controlled to reduce the consumption of the fluid. In general, the fluid flow may be varied between a relatively lower flow rate and a relatively higher flow rate or, alternatively, the flow may be periodically terminated. Fluid flow may be controlled by any combination of pumps, controllers, valves, or other regulator/fluid flow control member.

Abstract translation: 提供一种用于化学机械抛光系统的流体输送装置和方法。 控制流体到垫上的输送速率以减少流体的消耗。 通常，流体流动可以在相对较低的流速和相对较高的流速之间变化，或者可以周期性地终止流动。 流体流动可以由泵，控制器，阀门或其他调节器/流体流量控制构件的任何组合来控制。

公开(公告)号：US06620027B2

公开(公告)日：2003-09-16

申请号：US10044379

申请日：2002-01-09

Applicant: Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

Inventor： Ajoy Zutshi ,  Rajeev Bajaj ,  Fred C. Redeker ,  Yutao Ma ,  Kapila Wijekoon

IPC: B24B5100

CPC classification number: B24B37/12 ,  B24B37/042 ,  B24B37/24

Abstract: Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

公开(公告)号：US06569349B1

公开(公告)日：2003-05-27

申请号：US09694866

申请日：2000-10-23

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: C09K1300

CPC classification number: C09G1/04 ,  H01L21/3212

Abstract: A method and composition for planarizing a substrate. The composition includes one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, a polar solvent, and deionized water. The composition may further comprise one or more surfactants, one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including a polar solvent.

Abstract translation: 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂，极性溶剂和去离子水。 组合物还可以包含一种或多种表面活性剂，一种或多种调节pH和/或研磨颗粒的试剂。 该方法包括使用包含极性溶剂的组合物平面化底物。

公开(公告)号：US06561873B2

公开(公告)日：2003-05-13

申请号：US10093897

申请日：2002-03-08

Applicant: Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B24B37/26 ,  B24B53/017 ,  H01L21/3212

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06435944B1

公开(公告)日：2002-08-20

申请号：US09428304

申请日：1999-10-27

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: C09K3/1463 ,  C09G1/02

Abstract: A CMP slurry is formulated with a single component oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. Embodiments include CMP Cu with a fixed abrasive pad or an abrasive containing slurry, employing a peroxy acid, e.g., peroxy benzoic acid, or a polyethylene glycol peroxy acid. In another embodiment, a single component is employed which dissociates in the slurry into an oxidizer and complexing agent, such as an amine-peroxy acid, e.g., urea peroxy acid.

Abstract translation: CMP浆料与能够氧化经历平坦化的金属的单一成分氧化剂一起配制，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 实施方案包括具有固定磨料垫的CMP Cu或含磨料的浆料，使用过氧酸，例如过氧苯甲酸或聚乙二醇过氧酸。 在另一个实施方案中，使用单一组分，其在浆料中解离成氧化剂和络合剂，例如胺 - 过氧酸，例如尿素过氧酸。

公开(公告)号：US6045435A

公开(公告)日：2000-04-04

申请号：US905757

申请日：1997-08-04

Applicant: Rajeev Bajaj ,  Subramoney Iyer ,  Thom Kobayashi ,  Jaime Saravia ,  Mark Fernandes ,  David K. Watts

Inventor： Rajeev Bajaj ,  Subramoney Iyer ,  Thom Kobayashi ,  Jaime Saravia ,  Mark Fernandes ,  David K. Watts

IPC: B24B37/04 ,  B24D13/14 ,  H01L21/321 ,  H01L21/768 ,  B24B1/00

CPC classification number: B24B37/24 ,  B24B37/042 ,  B24B37/26 ,  H01L21/3212 ,  H01L21/7684

Abstract: A method for polishing a metal layer (20) containing a combination of wide features (12), low density features (14), and high density features (18), is illustrated. A hydrophilic polish pad (24) having a shore D hardness of greater than 50 is used along with slurry (22) containing silica and an acidic based oxidizer such as oxadic acid in a chemical mechanical polishing (CMP) process. The result is less than 5:1 and preferably 1:1. This low selectivity results in the metal layer (20) being polished to a level below the surface of the surrounding oxide in a timed-controlled polish.

Abstract translation: 示出了用于抛光包含宽特征（12），低密度特征（14）和高密度特征（18）的组合的金属层（20）的方法。 在化学机械抛光（CMP）工艺中，与含有二氧化硅和酸性氧化剂如草酸的浆料（22）一起使用具有大于50的肖氏D硬度的亲水抛光垫（24）。 结果小于5：1，优选为1：1。 这种低选择性导致金属层（20）以定时控制的抛光剂抛光到周围氧化物表面以下的水平。

公开(公告)号：US6001730A

公开(公告)日：1999-12-14

申请号：US954191

申请日：1997-10-20

Applicant: Janos Farkas ,  Rajeev Bajaj ,  Melissa Freeman ,  David K. Watts ,  Sanjit Das

Inventor： Janos Farkas ,  Rajeev Bajaj ,  Melissa Freeman ,  David K. Watts ,  Sanjit Das

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768 ,  H01L1/00

CPC classification number: H01L21/76873 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877

Abstract: A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).

Abstract translation: 在集成电路（IC）上形成铜互连的方法通过形成具有开口的电介质层（20）开始。 在层（20）的开口内形成有TaN或TaSiN等钽系阻挡层（21）。 在阻挡层（21）的上方形成铜层（22）。 第一CMP工艺用于抛光铜（22）以暴露阻挡层（21）的部分。 然后使用与第一CMP工艺不同的第二CMP工艺来比电介质层（20）或铜层（22）更快地抛光层（21）的暴露部分。 在该两步CMP工艺之后，跨越集成电路基板（12）形成具有钽基阻挡层的铜互连。

公开(公告)号：US5882243A

公开(公告)日：1999-03-16

申请号：US839996

申请日：1997-04-24

Applicant: Sanjit Das ,  Subramoney Iyer ,  Olubunmi Adetutu ,  Rajeev Bajaj

Inventor： Sanjit Das ,  Subramoney Iyer ,  Olubunmi Adetutu ,  Rajeev Bajaj

IPC: B24B37/005 ,  B24B49/04 ,  B24B51/00

CPC classification number: B24B37/005 ,  B24B49/04

Abstract: A polishing system (10) is used to polish a semiconductor wafer (16) in accordance with the present invention. Polishing system (10) includes a wafer carrier (14) which includes a modulation unit (20). Modulation unit (20) includes a plurality of capacitors made up of a flexible lower plate (22) and a plurality of smaller upper plate segments (24). A controller (40) monitors the capacitance between each smaller upper plate segment (24) and lower plate (22), and compares the measured capacitance against a predefined set capacitance. To the extent the measured capacitance and predefined capacitance are different, controller (40) adjusts the voltage being applied to the respective upper plate segment (24) so that the measured capacitance and predefined capacitance are aligned. Thus, the present invention is able to achieve dynamic and localized control of the shape of the wafer as it is being polished.

Abstract translation: 根据本发明，抛光系统（10）用于抛光半导体晶片（16）。 抛光系统（10）包括包括调制单元（20）的晶片载体（14）。 调制单元（20）包括由柔性下板（22）和多个较小的上板段（24）组成的多个电容器。 控制器（40）监测每个较小的上板段（24）和下板（22）之间的电容，并将测量的电容与预定的设定电容进行比较。 在测量电容和预定电容不同的程度上，控制器（40）调节施加到相应的上板段（24）的电压，使得所测量的电容和预定电容对齐。 因此，本发明能够在抛光时实现晶片的形状的动态和局部控制。