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    Acoustically coupled resonators and method of making the same
    13.
    发明申请
    Acoustically coupled resonators and method of making the same 有权
    声耦合谐振器及其制作方法

    公开(公告)号：US20060232361A1

    公开(公告)日：2006-10-19

    申请号：US11109596

    申请日：2005-04-18

    Applicant: Kun Wang ,  Paul Bradley ,  Richard Ruby

    Inventor： Kun Wang ,  Paul Bradley ,  Richard Ruby

    IPC: H03H9/72 ,  H03H9/56

    CPC classification number: H03H9/587 ,  H03H3/02 ,  H03H7/1708 ,  H03H9/0095 ,  H03H9/0571 ,  H03H9/583 ,  H03H9/584 ,  H03H9/706 ,  H03H2003/0428 ,  Y10T29/49002

    Abstract: An apparatus includes a substrate with a cavity and a two-stage resonator filter fabricated over the cavity. The two-stage resonator filter includes a first stage and a second stage. The first stage includes a first resonator and a second resonator, the second resonator acoustically coupled to the first resonator. The second stage includes a third resonator and a fourth resonator, the fourth resonator acoustically coupled to the third resonator. The second resonator and the third resonators are electrically coupled. A decoupling layer couples the first resonator and the second resonator. The decoupling layer extends between the third resonator and the fourth resonator. The first resonator and the fourth resonator are above the substrate. The decoupling layer is above the first resonator and the fourth resonator. The second resonator and the third resonators are above the decoupling layer.

    Abstract translation: 一种装置包括具有空腔的衬底和在空腔上制造的两级谐振器滤波器。 两级谐振滤波器包括第一级和第二级。 第一级包括第一谐振器和第二谐振器，第二谐振器声耦合到第一谐振器。 第二级包括第三谐振器和第四谐振器，第四谐振器声耦合到第三谐振器。 第二谐振器和第三谐振器电耦合。 去耦层耦合第一谐振器和第二谐振器。 解耦层在第三谐振器和第四谐振器之间延伸。 第一谐振器和第四谐振器在衬底之上。 去耦层位于第一谐振器和第四谐振器之上。 第二谐振器和第三谐振器在去耦层之上。

    Acoustic resonator performance enhancement using filled recessed region
    14.
    发明申请
    Acoustic resonator performance enhancement using filled recessed region 有权
    使用填充凹陷区域的声谐振器性能提升

    公开(公告)号：US20060226932A1

    公开(公告)日：2006-10-12

    申请号：US11100311

    申请日：2005-04-06

    Applicant: Ronald Fazzio ,  Richard Ruby

    Inventor： Ronald Fazzio ,  Richard Ruby

    IPC: H03H9/54

    CPC classification number: H03H9/132 ,  H03H9/02149 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

    Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The fill region is in one of the first and second electrodes.

    Abstract translation: 声谐振器，其包括基板，第一电极，压电材料层，第二电极和填充区域。 第一电极与衬底相邻，并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层，第二电极具有外周。 填充区域位于第一和第二电极之一中。

    Film-bulk acoustic wave resonator with motion plate
    15.
    发明申请
    Film-bulk acoustic wave resonator with motion plate 有权
    具有运动板的膜 - 体声波谐振器

    公开(公告)号：US20060197411A1

    公开(公告)日：2006-09-07

    申请号：US11073345

    申请日：2005-03-04

    Applicant: Storrs Hoen ,  Mark Unkrich ,  William Trutna ,  John Larson ,  Richard Ruby ,  Graham Flower ,  Annette Grot

    Inventor： Storrs Hoen ,  Mark Unkrich ,  William Trutna ,  John Larson ,  Richard Ruby ,  Graham Flower ,  Annette Grot

    IPC: H01L41/04

    CPC classification number: G01P15/097 ,  G01L1/165

    Abstract: An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an acoustic reflector formed in an FBAR wafer and a surface. A first electrode is formed on the surface of the acoustic reflector and has a surface. A piezoelectric layer is formed on the surface of the first electrode and has a surface. A second electrode is formed on the surface of the piezoelectric layer. A motion plate is suspended in space at a predetermined distance relative to the surface of the second electrode and is capacitively coupled to the FBAR.

    Abstract translation: 一种用于测量采用具有运动板的膜 - 体声波谐振器的目标环境变量（TEV）的装置和方法。 膜 - 体声波谐振器（FBAR）包括形成在FBAR晶片和表面中的声反射器。 第一电极形成在声反射体的表面上并具有表面。 在第一电极的表面上形成压电层并具有表面。 第二电极形成在压电层的表面上。 运动板相对于第二电极的表面以预定距离悬挂在空间中，并且电容耦合到FBAR。

    Thin-film acoustically-coupled transformer
    17.
    发明申请
    Thin-film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号：US20050093656A1

    公开(公告)日：2005-05-05

    申请号：US10699481

    申请日：2003-10-30

    Applicant: John Larson ,  Richard Ruby

    Inventor： John Larson ,  Richard Ruby

    IPC: H03H9/17 ,  H03H9/13 ,  H03H9/60 ,  H03H9/56

    CPC classification number: H03H9/605 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  Y10T29/42 ,  H01L2924/00014

    Abstract: One embodiment of the acoustically-coupled transformer includes a stacked bulk acoustic resonator (SBAR) having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment includes first and second stacked bulk acoustic resonators (SBARs), each as described above, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR. The transformer provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    Abstract translation: 声耦合变压器的一个实施例包括具有堆叠的一对膜体声波谐振器（FBAR）的层叠体声波谐振器（SBAR），它们之间具有声耦合器。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例包括如上所述的第一和第二层叠体声波谐振器（SBAR），将第一SBAR的一个FBAR与第二SBAR的一个FBAR连接的第一电路和连接第一SBAR的另一个FBAR的第二电路 SBAR到第二个SBAR的另一个FBAR。 变压器提供阻抗变换，可以将单端电路与平衡电路相连，反之亦然，电隔离一次和二次。 一些实施例另外电平衡。

    Impedance transforming bulk acoustic wave baluns
    19.
    发明授权
    Impedance transforming bulk acoustic wave baluns 有权
    阻抗变换体积声波平衡不平衡变压器

    公开(公告)号：US07612636B2

    公开(公告)日：2009-11-03

    申请号：US11343117

    申请日：2006-01-30

    Applicant: Tiberiu Jamneala ,  John D. Larson, III ,  Richard Ruby

    Inventor： Tiberiu Jamneala ,  John D. Larson, III ,  Richard Ruby

    IPC: H03H9/54 ,  H03H9/60

    CPC classification number: H03H9/584 ,  H03H9/0095 ,  H03H9/587 ,  H03H9/589

    Abstract: A bulk acoustic wave device includes an acoustic decoupler between first and second film bulk acoustic resonators (FBARs). The first FBAR is resonant at a resonant frequency of the device and includes first and second planar electrodes abutting opposite sides of a first resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to a propagation axis normal to the first and second electrodes. The first FBAR has a first electrical impedance parallel to the propagation axis. The second FBAR is resonant at the resonant frequency and includes third and fourth planar electrodes abutting opposite sides of a second resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to the propagation axis. The second FBAR has a second electrical impedance parallel to the propagation axis and different from the first electrical impedance.

    Abstract translation: 体声波器件包括第一和第二膜体声波谐振器（FBAR）之间的声耦合器。 第一FBAR以该器件的谐振频率谐振，并且包括第一和第二平面电极，该第一和第二平面电极邻接第一谐振器体的相对侧，第一谐振器体积不含任何中间电极，并且包含压电材料，该压电材料设置为平行于垂直于第一谐振器的传播轴的声振动， 第二电极。 第一个FBAR具有平行于传播轴的第一个电阻抗。 第二FBAR在谐振频率下谐振，并且包括第三和第四平面电极，其邻接没有任何中间电极的第二谐振器体的相对侧，并且包含被设置用于平行于传播轴的声学振动的压电材料。 第二FBAR具有平行于传播轴线并且不同于第一电阻抗的第二电阻抗。

    Thin film bulk acoustic resonator with a mass loaded perimeter
    20.
    发明授权
    Thin film bulk acoustic resonator with a mass loaded perimeter 有权
    具有质量负载周长的薄膜体声波谐振器

    公开(公告)号：US07280007B2

    公开(公告)日：2007-10-09

    申请号：US10990201

    申请日：2004-11-15

    Applicant: Hongjun Feng ,  R. Shane Fazzio ,  Richard Ruby ,  Paul Bradley

    Inventor： Hongjun Feng ,  R. Shane Fazzio ,  Richard Ruby ,  Paul Bradley

    IPC: H03H9/00 ,  H03H9/09

    CPC classification number: H03H9/02118 ,  H03H9/173 ,  H03H9/177

    Abstract: A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

    Abstract translation: 由电极制成的谐振器结构（FBAR）夹着压电材料。 两个导电电极的交点定义了声谐振器的有效面积。 活动区域分为两个同心区域; 周边或框架，以及中央区域。 在两个导电电极中的一个上添加环，以改善电性能（以Q为单位）。

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