Screening for anti-ovulatory compounds
    11.
    发明申请
    Screening for anti-ovulatory compounds 审中-公开
    筛选抗排卵化合物

    公开(公告)号:US20060121469A1

    公开(公告)日:2006-06-08

    申请号:US10519404

    申请日:2003-07-04

    IPC分类号: C12Q1/68 G01N33/53

    CPC分类号: C12Q1/6897

    摘要: Screening methods for identifying compounds that are useful as contraceptives are provided. In particular, the compounds inhibit the interaction between steroidogenic factor 1 (SF-1) and nuclear receptor interacting protein (Nrip1) or the up-regulate SF-1 expression.

    摘要翻译: 提供了用于鉴定可用作避孕药具的化合物的筛选方法。 特别地,这些化合物抑制类固醇生成因子1(SF-1)和核受体相互作用蛋白(Nrip1)或上调SF-1表达之间的相互作用。

    Sorting waste materials
    12.
    发明授权
    Sorting waste materials 有权
    排序废料

    公开(公告)号:US06446813B1

    公开(公告)日:2002-09-10

    申请号:US09381135

    申请日:1999-11-23

    申请人: Roger White

    发明人: Roger White

    IPC分类号: B07B142

    摘要: From one aspect the invention is a method of classifying waste materials comprising arranging two sieve screens, each having an inlet end and an outlet end, one above the other to define a space there between, arranging the upper screen, to be of coarser mesh size than the lower screen, supplying waste material to be classified to the inlet end of the upper screen, vibrating the screens, and blowing air between the screens from the inlet end and towards the outlet end whereby the waste material being blown away from the outlet ends of the screens, and large heavy material falling under gravity from the outlet end of the upper screen, and separately collecting the separated waste material fractions. From another aspect the invention is an apparatus for carrying out the method described above.

    摘要翻译: 从一个方面,本发明是一种分类废料的方法,包括布置两个筛网,每个筛网具有入口端和出口端,一个在另一个之上,以在其间限定一个空间,将上筛网排列成较粗的筛网尺寸 供给待分类的废料进入上筛网的入口端,振动筛网,并从入口端和出口端在筛网之间吹送空气,从而废料远离出口端 的筛网和大重物质从重力下降到上筛的出口端,并分别收集分离的废料部分。 从另一方面,本发明是用于执行上述方法的装置。

    DEEP TRENCH CAPACITOR FOR SOI CMOS DEVICES FOR SOFT ERROR IMMUNITY
    15.
    发明申请
    DEEP TRENCH CAPACITOR FOR SOI CMOS DEVICES FOR SOFT ERROR IMMUNITY 有权
    用于软错误免疫的SOI CMOS器件的深度TRENCH电容器

    公开(公告)号:US20100052026A1

    公开(公告)日:2010-03-04

    申请号:US12200538

    申请日:2008-08-28

    IPC分类号: H01L21/8242 H01L27/108

    摘要: A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer, and source and drain regions and a body/channel region disposed within the active semiconductor layer, an insulator layer having a first and second side, the first side being adjacent to the active semiconductor layer, a substrate disposed adjacent to the second side of the insulator layer, a deep trench capacitor disposed under the body/channel region of the semiconductor device. The deep trench capacitor electrically connects with and contacts the body/channel region of the semiconductor device, and is located adjacent to the gate of the semiconductor device. The semiconductor structure increases a critical charge Qcrit, thereby reducing a soft error rate (SER) of the semiconductor device.

    摘要翻译: 公开了半导体结构。 半导体结构包括有源半导体层,具有设置在有源半导体层顶部的栅极的半导体器件以及设置在有源半导体层内的源极和漏极区域以及主体/沟道区域,具有第一和第二 所述第一侧与所述有源半导体层相邻,与所述绝缘体层的所述第二侧相邻配置的衬底,设置在所述半导体器件的所述主体/沟道区域下方的深沟槽电容器。 深沟槽电容器与半导体器件的主体/沟道区电连接并接触半导体器件的主体/沟道区,并且位于半导体器件的栅极附近。 半导体结构增加了临界电荷Qcrit,从而降低了半导体器件的软错误率(SER)。

    Endoscope for direct visualization of the spine and epidural space
    17.
    发明授权
    Endoscope for direct visualization of the spine and epidural space 失效
    内窥镜用于直接观察脊柱和硬膜外腔

    公开(公告)号:US5396880A

    公开(公告)日:1995-03-14

    申请号:US865349

    申请日:1992-04-08

    摘要: A system for direct visualization of the spine and the epidural and/or intra-discal space to facilitate diagnosis and treatment of spinal conditions and that is adapted for percutaneous introduction into the spinal space. The system includes a disposable flexible catheter, a fiber-optic bundle disposed within the catheter which is connected to a light source and camera. The bundle is removably and adjustably connected to the proximal end of the catheter to permit rotation of the bundle relative to the catheter. A mechanism for controllably deflecting the tip of the catheter is provided to vary the viewing angle of the fiber-optic bundle within and to assist in steering the catheter through the spinal space. The mechanism includes a deflection wire extending through the catheter and affixed at the distal end thereof. The proximal end of the deflection wire is affixed to a sleeve which is slidably disposed around the catheter and within a housing. The housing includes an internal flange that defines a stop surface which is contacted by the sleeve as the catheter and deflection wire is moved in a first direction. After the sleeve contacts the stop surface, further movement of the catheter in the first direction causes tension in the wire between the sleeve and the wire's securement to the catheter, thereby bending the catheter tip in the direction of the securement. The catheter can be rotated with the tip in its deflected position to provide a conical viewing region within the spinal space.

    摘要翻译: 用于脊柱和硬膜外和/或椎间盘内空间的直接可视化的系统,以便于脊柱状况的诊断和治疗,并适于经皮引入脊柱空间。 该系统包括一次性柔性导管,布置在导管内的光纤束,其连接到光源和照相机。 束可拆卸地并且可调节地连接到导管的近端以允许束相对于导管旋转。 提供用于可控地偏转导管的尖端的机构以改变光纤束的视角并帮助将导管转向脊柱空间。 该机构包括延伸穿过导管并固定在其远端的偏转线。 偏转线的近端固定到套筒上,该套筒可滑动地设置在导管周围并在壳体内。 壳体包括内部凸缘,其限定当导管和挠曲线沿第一方向移动时由套筒接触的止动表面。 在套筒接触止动表面之后,导管在第一方向上的进一步运动导致套管和电线固定到导管之间的线中的张力,从而沿着固定方向弯曲导管尖端。 导管可以随着尖端在其偏转位置旋转以在脊柱空间内提供锥形观察区域。

    Deep trench capacitor and method of making same
    20.
    发明授权
    Deep trench capacitor and method of making same 有权
    深沟槽电容器及其制作方法

    公开(公告)号:US07812388B2

    公开(公告)日:2010-10-12

    申请号:US11767616

    申请日:2007-06-25

    IPC分类号: H01L27/108 H01L29/94

    CPC分类号: H01L29/945 H01L28/40

    摘要: A trench capacitor and method of forming a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.

    摘要翻译: 沟槽电容器和形成沟槽电容器的方法。 所述沟槽电容器包括:单晶硅衬底中的沟槽,在所述沟槽的侧壁和底部上的保形电介质衬垫; 填充未被衬垫填充的沟槽区域的导电多晶硅内板; 衬底中的导电掺杂外板,其围绕所述沟槽的侧壁和底部; 衬底中的掺杂硅区域; 在所述衬底的顶表面上暴露的所述掺杂硅区域的表面区域上的第一导电金属硅化物层; 在所述内板的在所述基板的顶表面处暴露的表面区域上的第二导电金属硅化物层; 以及在所述第一和第二金属硅化物层之间的所述衬底的顶表面上的绝缘环。