公开(公告)号：US20050148181A1

公开(公告)日：2005-07-07

申请号：US10957026

申请日：2004-10-01

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki

IPC分类号： H01L21/304 ,  B24B37/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC分类号： C30B29/06 ,  B24B37/042 ,  C30B33/10 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608

摘要： Provided is a method for producing a silicon wafer those surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the chamfered wafer, a mild lapping step for abrading away part of processing distortions on the rear surface of the wafer left after chamfering and lapping, a rear-surface mild polishing step for abrading away part of roughness on the rear surface of the wafer, an etching step for alkali-etching the remains of processing distortions on the front and rear surfaces of the wafer, a mirror-polishing step for mirror-polishing the surface of the etched wafer, and a cleaning step for cleaning the mirror-polished wafer.

摘要翻译： 提供一种硅晶片的制造方法，其表面具有精确的平坦度和微小的表面粗糙度，并且能够在前后表面之间进行目视辨别，该方法包括将单晶锭切割成薄盘状的切片工序， 用于倒角晶片的倒角步骤，用于使倒角晶片平坦化的研磨步骤，用于在倒角和研磨后留下的晶片背面上的部分加工变形的研磨，温和研磨步骤，后表面温和抛光 用于研磨晶片后表面上的粗糙部分的步骤，用于碱蚀刻晶片的前表面和后表面上的加工变形残余物的蚀刻步骤，用于镜面抛光晶片表面的镜面抛光步骤 蚀刻晶片，以及用于清洁镜面抛光晶片的清洁步骤。

公开(公告)号：US20050112893A1

公开(公告)日：2005-05-26

申请号：US10957030

申请日：2004-10-01

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki ,  Akihiro Kudo ,  Masashi Norimoto

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki ,  Akihiro Kudo ,  Masashi Norimoto

IPC分类号： H01L21/304 ,  B24B37/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC分类号： C30B29/06 ,  B24B37/042 ,  C30B33/10 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608

摘要： Provided is an improved method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the wafer, an etching step for removing processing distortions on the wafer surfaces, a mirror-polishing step for mirror-polishing the surface of the wafer, and a cleaning step for cleaning the wafer. The etching step further comprises a first acid-etching phase and a second alkali-etching phase, and a rear surface mild polishing step is introduced between the first and second etching phases in order to abrade part of roughness formed on the rear surface of the wafer as a result of the first etching phase.

摘要翻译： 提供了一种用于制造表面精确平坦度和微小表面粗糙度的硅晶片的改进方法，并且其允许在视觉上区分前表面和后表面，该方法包括将单晶锭切割成薄盘的切片步骤 用于使晶片倒角的研磨步骤，用于使晶片平坦化的研磨步骤，用于去除晶片表面上的加工变形的蚀刻步骤，用于镜面抛光晶片表面的镜面抛光步骤以及清洁 清洁晶圆的步骤。 蚀刻步骤还包括第一酸腐蚀相和第二碱蚀刻相，并且在第一和第二蚀刻相之间引入后表面温和的抛光步骤，以便研磨形成在晶片的后表面上的部分粗糙度 作为第一蚀刻阶段的结果。

公开(公告)号：US07717768B2

公开(公告)日：2010-05-18

申请号：US11433701

申请日：2006-05-11

申请人： Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

发明人： Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC分类号： B24B7/22

CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/02024

摘要： This wafer polishing apparatus includes: a polishing plate having a polishing pad; a carrier plate which is placed facing the polishing pad and which slides and presses wafers against the polishing pad, while rotating in a state of holding the wafers; and an abrasive slurry supply device, wherein the abrasive slurry supply device is able to supply different abrasive slurries, each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries. This method for polishing wafers includes: while supplying an abrasive slurry to a surface of a polishing pad, sliding and pressing wafers against the polishing pad, wherein different abrasive slurries are supplied to the surface of the polishing pad, and each of the abrasive slurries contains abrasives of which the average grain size is different from those contained in the other abrasive slurries.

摘要翻译： 该晶片抛光装置包括：具有抛光垫的抛光板; 载体板，其面向抛光垫放置并且在保持晶片的状态下旋转的同时将晶片滑动并压靠在抛光垫上; 和磨料浆料供应装置，其中磨料浆料供应装置能够供应不同的研磨浆料，每个研磨浆料含有平均粒径与其它磨料浆料中所含磨料不同的研磨剂。 抛光晶片的这种方法包括：当将研磨浆料供应到抛光垫的表面时，将晶片滑动并压靠抛光垫，其中不同的磨料浆料被供应到抛光垫的表面，并且每个磨料浆料包含 研磨剂的平均粒径与其他磨料浆料中所含的磨粒不同。

公开(公告)号：US07601644B2

公开(公告)日：2009-10-13

申请号：US11597169

申请日：2005-09-02

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/311

CPC分类号： B24B37/042 ,  H01L21/02019 ,  H01L21/30604

摘要： This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.

摘要翻译： 该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面 并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光 。 该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。

公开(公告)号：US07601642B2

公开(公告)日：2009-10-13

申请号：US10558789

申请日：2004-05-27

申请人： Sakae Koyata ,  Kazushige Takaishi

发明人： Sakae Koyata ,  Kazushige Takaishi

IPC分类号： H01L21/461

CPC分类号： H01L21/02021 ,  H01L21/02008 ,  H01L21/02052 ,  H01L21/30604

摘要： The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafer is subjected to alkaline cleaning to be removed of contaminants resulting from preceding machining; and step 16 in which the wafer is alternately transferred between two groups of etching tanks one of which contain acidic etching solutions and the other alkaline etching solutions, wherein an additional step 12 is introduced between step 11 and step 13 in which a wafer is immersed in an acidic solution containing hydrofluoric acid (HF) and nitric acid (HNO3) at a volume ratio of ⅛ to ½ (HF/HNO3) so that degraded superficial layers occurring on the front and rear surfaces of the wafer as a result of machining can be removed and the edge surface of the wafer can be beveled.The inventive method simplifies the steps involved in the processing of a wafer, and reduces the intervention of alkaline cleaning accompanied with mechanical beveling, thereby reducing the risk of contamination due to metal impurities which may result from alkaline cleaning.

摘要翻译： 用于处理硅晶片的本发明的方法是包括步骤11的方法，其中将单晶锭切成薄片状晶片; 步骤13，其中每个晶片的表面被研磨成平面; 步骤14，其中晶片经受碱性清洁以去除由先前加工产生的污染物; 和步骤16，其中晶片交替地在两组蚀刻槽之间交替传输，其中一组蚀刻槽含有酸性蚀刻溶液和另一种碱性蚀刻溶液，其中在步骤11和步骤13之间引入附加步骤12，其中将晶片浸入 含有氢氟酸（HF）和硝酸（HNO3）的体积比为1/8至1/2（HF / HNO 3）的酸性溶液，使得由于加工而在晶片的表面和表面上发生降解的表面层 可以除去晶片的边缘表​​面。 本发明的方法简化了晶片处理中涉及的步骤，并且减少了伴随机械斜面的碱性清洁的干预，从而降低了由碱性清洗引起的金属杂质污染的风险。

公开(公告)号：US20090181546A1

公开(公告)日：2009-07-16

申请号：US12059408

申请日：2008-03-31

申请人： Takeo KATOH ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

发明人： Takeo KATOH ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC分类号： H01L21/306

CPC分类号： H01L21/68735 ,  H01L21/67063 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67259

摘要： A single-wafer etching apparatus according to the present invention supplies an etchant to an upper surface of a wafer while rotating the wafer, thereby etching the upper surface of the wafer. Further, wafer elevating means moves up and down the wafer, and a lower surface blow mechanism which blows off the etchant flowing down on an edge surface of the wafer toward a radially outer side of the wafer by injection of a gas is fixed and provided without rotating together with the wafer. Furthermore, gap adjusting means controls the wafer elevating means based on detection outputs from gap detecting means for detecting a gap between the wafer and the lower surface blow mechanism, thereby adjusting the gap. The apparatus according to the present invention uniformly etches the edge portion without collapsing a chamfered shape of the edge portion of the wafer, and prevents a glitter from being produced on the edge surface of the wafer.

摘要翻译： 根据本发明的单晶片蚀刻装置在旋转晶片的同时向晶片的上表面提供蚀刻剂，从而蚀刻晶片的上表面。 此外，晶片升降装置上下移动晶片，并且通过注入气体将沿着晶片的边缘表​​面向下流动的蚀刻剂朝向晶片的径向外侧吹出的下表面吹风机构被固定并且没有 与晶片一起旋转。 此外，间隙调整装置基于来自间隙检测装置的检测输出来控制晶片升降装置，用于检测晶片和下表面吹风机构之间的间隙，从而调整间隙。 根据本发明的装置均匀地蚀刻边缘部分而不会塌陷晶片的边缘部分的倒角形状，并且防止在晶片的边缘表​​面上产生闪光。

公开(公告)号：US20090053894A1

公开(公告)日：2009-02-26

申请号：US12162732

申请日：2007-01-24

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

IPC分类号： H01L21/302

CPC分类号： H01L21/30604 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02008 ,  H01L21/02019 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02658

摘要： A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.

摘要翻译： 提供一种制造能够减少在外延层上形成的表面缺陷或滑动的发生的外延晶片的方法。 该制造方法的特征在于包括：平滑步骤，根据硅晶片的表面形状控制蚀刻剂对晶片表面的施加，以平滑晶片表面; 以及基于外延生长在晶片的表面上形成由硅单晶形成的外延层的外延层形成步骤。

公开(公告)号：US07488400B2

公开(公告)日：2009-02-10

申请号：US11582880

申请日：2006-10-17

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306 ,  H01L21/302

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US07456106B2

公开(公告)日：2008-11-25

申请号：US10957026

申请日：2004-10-01

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki

IPC分类号： H01L21/00 ,  B44C1/22

CPC分类号： C30B29/06 ,  B24B37/042 ,  C30B33/10 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608

摘要： Provided is a method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the chamfered wafer, a mild lapping step for abrading away part of processing distortions on the rear surface of the wafer left after chamfering and lapping, a rear-surface mild polishing step for abrading away part of roughness on the rear surface of the wafer, an etching step for alkali-etching the remains of processing distortions on the front and rear surfaces of the wafer, a front-surface mirror-polishing step for mirror-polishing the front surface of the etched wafer, and a cleaning step for cleaning the mirror-polished wafer.

摘要翻译： 本发明提供一种表面精度平坦度和微小表面粗糙度的硅晶片的制造方法，其特征在于，能够在前后表面之间进行目视辨别，其特征在于，包括将单晶锭切割成薄盘状的切片工序， 用于倒角晶片的倒角步骤，用于使倒角晶片平坦化的研磨步骤，用于在倒角和研磨后留下的晶片背面上的部分加工变形的研磨，温和研磨步骤，后表面温和抛光 用于研磨晶片后表面上的粗糙部分的步骤，用于碱蚀刻晶片的前表面和后表面上的加工变形残余物的蚀刻步骤，用于镜面抛光的前表面镜面抛光步骤 蚀刻晶片的前表面，以及用于清洁镜面抛光晶片的清洁步骤。

公开(公告)号：US20070158308A1

公开(公告)日：2007-07-12

申请号：US10596177

申请日：2004-12-03

申请人： Sakae Koyata ,  Tadashi Denda ,  Masashi Norimoto ,  Kazushige Takaishi

发明人： Sakae Koyata ,  Tadashi Denda ,  Masashi Norimoto ,  Kazushige Takaishi

IPC分类号： B44C1/22 ,  C03C15/00 ,  H01L21/302

CPC分类号： H01L21/02024 ,  B24B37/04 ,  H01L21/02019 ,  H01L21/30604

摘要： A surface of a semiconductor wafer which has been lapped is ground. This removes a damage caused on the wafer surface during lapping, thereby increasing the flatness of the wafer surface. Next, the wafer is subjected to composite etching and the both surfaces are polished, i.e., subjected to mirror polishing while the wafer rear surface is slightly polished so as to obtain a single-side mirror surface wafer having a difference between the front and the rear surfaces. As compared to mere acid etching or alkali etching, it is possible to manufacture a single-side mirror surface wafer having a higher flatness.

摘要翻译： 研磨已经研磨的半导体晶片的表面。 这消除了在研磨期间在晶片表面上造成的损伤，从而增加了晶片表面的平坦度。 接下来，对晶片进行复合蚀刻，并且抛光两个表面，即，在晶片后表面稍微抛光的同时进行镜面抛光，以获得具有前后的差异的单面镜面晶片 表面。 与仅仅酸蚀刻或碱蚀刻相比，可以制造具有较高平坦度的单面镜面晶片。