Photoelectric converter
    11.
    发明授权
    Photoelectric converter 有权
    光电转换器

    公开(公告)号:US06730898B2

    公开(公告)日:2004-05-04

    申请号:US10119416

    申请日:2002-04-08

    Inventor: Satoshi Machida

    CPC classification number: H04N5/365 G11C27/026 H01L27/14609 H04N5/363

    Abstract: To provide a photoelectric converter in which random noise is reduced. In a photoelectric converter, an output terminal of a photoelectric converter means is connected to input terminals of a reset means and an amplifying means, a charge transfer means is connected to an output terminal of the amplifying means, another terminal of the charge transfer means is connected to a capacitor and a gate of a source follower amplifier, a source of the source follower amplifier is connected to a channel select means, another terminal of the channel select means is connected to a common signal line, and the common signal line is connected to a current source.

    Abstract translation: 提供减少随机噪声的光电转换器。 在光电转换器中,光电转换器装置的输出端连接到复位装置和放大装置的输入端,电荷转移装置连接到放大装置的输出端,电荷转移装置的另一端 连接到源极跟随放大器的电容器和栅极,源极跟随放大器的源极连接到沟道选择装置,沟道选择装置的另一个端子连接到公共信号线,并且公共信号线被连接 到当前来源。

    Linear image sensor
    12.
    发明授权
    Linear image sensor 失效
    线性图像传感器

    公开(公告)号:US06618086B1

    公开(公告)日:2003-09-09

    申请号:US09065994

    申请日:1998-04-24

    CPC classification number: H04N5/3597 H01L27/14643 H04N5/3692

    Abstract: A linear image sensor using phototransistors as light receiving elements has improved after-image characteristics and reduced production costs by providing a light-receiving MOS diode proximate each photosensor, placing the MOS diode in an inversion state during the accumulation of photo-charge so that the accumulated photo-charge is accumulated at a base region of the phototransistors, placing the MOS diode in an accumulating state during a reset operation to return the phototransistors to an initial state after a readout operation has been performed, so that residual charge without reading out is transferred to the base region of the phototransistors and an after-image caused by residual charge is reduced through an emitter of the phototransistors.

    Abstract translation: 使用光电晶体管作为光接收元件的线性图像传感器通过在每个光电传感器附近设置光接收MOS二极管,在光电荷累积期间将MOS二极管置于反转状态,从而具有改进的后图像特性并降低了生产成本, 在光电晶体管的基极区积累积累的光电荷,在复位动作期间将MOS二极管置于累积状态,在读出操作后将光电晶体管返回到初始状态,使得没有读出的残留电荷为 转移到光电晶体管的基极区域,并且通过光电晶体管的发射极减少由剩余电荷引起的后图像。

    Resist mark having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer and method for manufacturing semiconductor wafer having it
    13.
    发明授权
    Resist mark having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer and method for manufacturing semiconductor wafer having it 失效
    具有用于测量设置在半导体晶片上的光掩模的覆盖精度的测量标记的抗蚀标记以及具有该半导体晶片的半导体晶片的制造方法

    公开(公告)号:US06368980B1

    公开(公告)日:2002-04-09

    申请号:US09458819

    申请日:1999-12-13

    Abstract: A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.

    Abstract translation: 用于测量设置在半导体晶片上的光掩模的覆盖精度的抗蚀剂标记包括形成在基板上的第一开口的第一测量标记,在第一测量标记和第一开口中形成的中间层,框架 形成在中间层上的第二测量标记,以及形成在中间层上的与第二测量标记间隔开的第三测量标记。 第二测量标记的宽度足够短,不受热流现象引起的变形的影响。

    Working vehicle
    14.
    发明授权
    Working vehicle 有权
    工作车辆

    公开(公告)号:US06206128B1

    公开(公告)日:2001-03-27

    申请号:US09339354

    申请日:1999-06-24

    Abstract: In a working vehicle such as an agricultural tractor, a front wheel change speed device for transmitting drive to front wheels includes an equal speed clutch for driving the front wheels substantially at the same speed as rear wheels, and an accelerating clutch for driving the front wheels substantially at a higher speed than the rear wheels. In the front wheel change speed device of this invention, the equal speed clutch and accelerating clutch are arranged coaxially. The front wheel change speed device further includes a shift member axially shiftable for selectively operating the equal speed clutch and accelerating clutch, and an actuator for axially shifting the shift member.

    Abstract translation: 在诸如农用拖拉机的工作车辆中,用于将驱动传递到前轮的前轮变速装置包括用于以与后轮相同的速度驱动前轮的等速离合器,以及用于驱动前轮的加速离合器 基本上以比后轮更高的速度。 在本发明的前轮变速装置中,等速离合器和加速离合器同轴配置。 前轮变速装置还包括可移动的换档构件,用于选择性地操作等速离合器和加速离合器,以及用于轴向移动换档构件的致动器。

    Method of inspecting image sensors
    16.
    发明授权
    Method of inspecting image sensors 失效
    检查图像传感器的方法

    公开(公告)号:US5426060A

    公开(公告)日:1995-06-20

    申请号:US939090

    申请日:1992-09-02

    Abstract: A method of inspecting and a method of manufacturing image sensors formed on a surface of a semiconductor wafer. A semiconductor wafer is provided having image sensors formed on its surface. Grooves are cut at boundaries between image sensors to be inspected, so that each groove has a depth that is smaller than the thickness of the semiconductor wafer. The grooves are cut in the boundaries between the image sensors so that photoN sensing carriers generated in the boundary regions, that are not generated by the image sensor being inspected, do not affect the inspection of the image sensor. The characteristics of the image sensors are inspected before cutting through the semiconductor wafer to form individual image sensors. Thus, in accordance with the present invention, the electrical characteristics of the image sensors can be accurately ascertained either before or after separation from the semiconductor wafer.

    Abstract translation: 一种检查方法和形成在半导体晶片的表面上的图像传感器的制造方法。 提供了在其表面上形成有图像传感器的半导体晶片。 在要检查的图像传感器之间的边界处切割凹槽,使得每个凹槽的深度小于半导体晶片的厚度。 在图像传感器之间的边界处切割凹槽,使得在边界区域中产生的不被图像传感器产生的光感测载流子不影响图像传感器的检查。 在切割半导体晶片之前检查图像传感器的特性以形成单独的图像传感器。 因此,根据本发明,可以在与半导体晶片分离之前或之后准确地确定图像传感器的电特性。

    Image sensor with non-light-transmissive layer having photosensing
windows
    17.
    发明授权
    Image sensor with non-light-transmissive layer having photosensing windows 失效
    具有光敏窗口的非透光层的图像传感器

    公开(公告)号:US5329149A

    公开(公告)日:1994-07-12

    申请号:US775824

    申请日:1991-10-11

    Abstract: An improved image sensor comprises a plurality of photo-sensing elements each comprising an impurity diffusion layer formed in a surface of a semiconductor substrate and arrayed linearly. The photo-sensing elements are of an opposite conductivity type than that of the semiconductor substrate. A transparent insulating film is formed on the photo-sensing elements and the surface of the semiconductor substrate. A non-light transmitting shading film is formed over the transparent insulating film and has photo-sensing windows which overlay a part of each of the photo-sensing elements. The shape and area of each of the photo-sensing elements is equal. The area of each of the photo-sensing windows is equal, but the shape of the first and last photosensing windows is different from that of the remaining photosensing windows. By this arrangement, the amount of photoexcited carriers generated is uniform at all photo-sensing regions, since the area of all photo-sensing windows is equal. Also, since the area and shape of all photo-sensing elements is the same, the amount of photo-excited carriers stored by all the photo-sensing elements is equal, and thus an output current read out from the elements is uniform.

    Abstract translation: 改进的图像传感器包括多个光敏元件,每个光敏元件包括形成在半导体衬底的表面中的线性排列的杂质扩散层。 光敏元件与半导体衬底的导电类型相反。 在感光元件和半导体衬底的表面上形成透明绝缘膜。 在透明绝缘膜之上形成非透光遮光膜,并且具有覆盖每个光敏元件的一部分的光敏窗口。 每个感光元件的形状和面积相等。 每个感光窗口的面积相等,但是第一个和最后一个光敏窗口的形状与剩余的光敏窗口的形状不同。 通过这种布置,由于所有感光窗口的面积相等,所以在所有感光区域产生的光激发载流子的量是均匀的。 此外,由于所有感光元件的面积和形状相同,因此所有感光元件所存储的光激发载体的量相等,因此从元件读出的输出电流是均匀的。

    Semiconductor image sensor with an integrated voltage regulator
    18.
    发明授权
    Semiconductor image sensor with an integrated voltage regulator 失效
    具有集成电压调节器的半导体图像传感器

    公开(公告)号:US5109155A

    公开(公告)日:1992-04-28

    申请号:US557089

    申请日:1990-07-23

    CPC classification number: H04N3/1581 H04N3/1575

    Abstract: The semiconductor image sensing device is comprised of a single crystal substrate of one conductivity type, formed thereon with an array of photodetector 5 for effecting photo-electric conversion, a read-out circuit for sequentially reading out an output signal from each photodetector, an amplifier for voltage-converting the read output signal, and a voltage regulator for providing a constant voltage. The read-out circuit and the photodetectors are driven by a lower voltage supplied from the integrated voltage regulator so as to reduce a switching noise generated in the read-out circuit. S/N ratio of the semiconductor image sensor is improved by reducing the switching noise. Further, the power consumption can be saved by driving the read-out circuit at the lower voltage.

    Change-speed control construction
    20.
    发明授权
    Change-speed control construction 失效
    变速控制施工

    公开(公告)号:US5012909A

    公开(公告)日:1991-05-07

    申请号:US423765

    申请日:1989-10-18

    Abstract: A vehicle change-speed control construction for selectively engaging and disengaging a hydraulic clutch of a propelling transmission system according to a change-speed operation. Through maximum simplification and rationalization, the construction has a hydraulic control system comprised of minimized number of components consisting essentially of one pilot pressure controlled selector valve and a plurality of check valves operable in response to a change-speed operation. The improved construction is extremely simple and economical, yet achieves higher operational efficiency without transmission delay.

    Abstract translation: 一种车辆变速控制结构,用于根据变速操作选择性地接合和分离推进传动系统的液压离合器。 通过最大限度的简化和合理化,该结构具有一个液压控制系统,该系统包括最小数量的部件,其基本上由一个先导压力控制选择阀和多个可响应于变速操作的止回阀组成。 改进的结构非常简单和经济,而且在没有传输延迟的情况下实现更高的运行效率。

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