Abstract:
To provide a photoelectric converter in which random noise is reduced. In a photoelectric converter, an output terminal of a photoelectric converter means is connected to input terminals of a reset means and an amplifying means, a charge transfer means is connected to an output terminal of the amplifying means, another terminal of the charge transfer means is connected to a capacitor and a gate of a source follower amplifier, a source of the source follower amplifier is connected to a channel select means, another terminal of the channel select means is connected to a common signal line, and the common signal line is connected to a current source.
Abstract:
A linear image sensor using phototransistors as light receiving elements has improved after-image characteristics and reduced production costs by providing a light-receiving MOS diode proximate each photosensor, placing the MOS diode in an inversion state during the accumulation of photo-charge so that the accumulated photo-charge is accumulated at a base region of the phototransistors, placing the MOS diode in an accumulating state during a reset operation to return the phototransistors to an initial state after a readout operation has been performed, so that residual charge without reading out is transferred to the base region of the phototransistors and an after-image caused by residual charge is reduced through an emitter of the phototransistors.
Abstract:
A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.
Abstract:
In a working vehicle such as an agricultural tractor, a front wheel change speed device for transmitting drive to front wheels includes an equal speed clutch for driving the front wheels substantially at the same speed as rear wheels, and an accelerating clutch for driving the front wheels substantially at a higher speed than the rear wheels. In the front wheel change speed device of this invention, the equal speed clutch and accelerating clutch are arranged coaxially. The front wheel change speed device further includes a shift member axially shiftable for selectively operating the equal speed clutch and accelerating clutch, and an actuator for axially shifting the shift member.
Abstract:
An image sensor of the contact type is comprised of a plurality of image sensor chips arranged linearly with one another. Each chip has an array of picture elements arranged at a given constant pitch which is set slightly smaller than a standard reading pitch in a main scanning direction, thereby ensuring uniform output performance of the image sensor.
Abstract:
A method of inspecting and a method of manufacturing image sensors formed on a surface of a semiconductor wafer. A semiconductor wafer is provided having image sensors formed on its surface. Grooves are cut at boundaries between image sensors to be inspected, so that each groove has a depth that is smaller than the thickness of the semiconductor wafer. The grooves are cut in the boundaries between the image sensors so that photoN sensing carriers generated in the boundary regions, that are not generated by the image sensor being inspected, do not affect the inspection of the image sensor. The characteristics of the image sensors are inspected before cutting through the semiconductor wafer to form individual image sensors. Thus, in accordance with the present invention, the electrical characteristics of the image sensors can be accurately ascertained either before or after separation from the semiconductor wafer.
Abstract:
An improved image sensor comprises a plurality of photo-sensing elements each comprising an impurity diffusion layer formed in a surface of a semiconductor substrate and arrayed linearly. The photo-sensing elements are of an opposite conductivity type than that of the semiconductor substrate. A transparent insulating film is formed on the photo-sensing elements and the surface of the semiconductor substrate. A non-light transmitting shading film is formed over the transparent insulating film and has photo-sensing windows which overlay a part of each of the photo-sensing elements. The shape and area of each of the photo-sensing elements is equal. The area of each of the photo-sensing windows is equal, but the shape of the first and last photosensing windows is different from that of the remaining photosensing windows. By this arrangement, the amount of photoexcited carriers generated is uniform at all photo-sensing regions, since the area of all photo-sensing windows is equal. Also, since the area and shape of all photo-sensing elements is the same, the amount of photo-excited carriers stored by all the photo-sensing elements is equal, and thus an output current read out from the elements is uniform.
Abstract:
The semiconductor image sensing device is comprised of a single crystal substrate of one conductivity type, formed thereon with an array of photodetector 5 for effecting photo-electric conversion, a read-out circuit for sequentially reading out an output signal from each photodetector, an amplifier for voltage-converting the read output signal, and a voltage regulator for providing a constant voltage. The read-out circuit and the photodetectors are driven by a lower voltage supplied from the integrated voltage regulator so as to reduce a switching noise generated in the read-out circuit. S/N ratio of the semiconductor image sensor is improved by reducing the switching noise. Further, the power consumption can be saved by driving the read-out circuit at the lower voltage.
Abstract:
A semiconductor device for image sensing and printing comprises an integrated circuit composed of a single semiconductor substrate on which are integrated a linear array of phototransistors, driving circuits and control circuits. The control circuits are operable in a read mode for processing output signals from the phototransistors to enable transmission thereof to an external device and are operable in a print mode for processing inputted image data signals to produce printing signals which are applied to the driving circuits for use in driving an external printing device.
Abstract:
A vehicle change-speed control construction for selectively engaging and disengaging a hydraulic clutch of a propelling transmission system according to a change-speed operation. Through maximum simplification and rationalization, the construction has a hydraulic control system comprised of minimized number of components consisting essentially of one pilot pressure controlled selector valve and a plurality of check valves operable in response to a change-speed operation. The improved construction is extremely simple and economical, yet achieves higher operational efficiency without transmission delay.