Semiconductor device
    14.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US06566728B1

    公开(公告)日:2003-05-20

    申请号:US09678555

    申请日:2000-10-04

    CPC classification number: H04R19/005 H04R19/04

    Abstract: First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.

    Abstract translation: 首先,在半导体衬底上形成固定电极层,并且通过形成每个电路元件的电极布线,在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上在隔离膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚设的岛。 将供电电位Vcc施加到虚拟岛,将接地电位GND施加到P +型分离区域。

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