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    Weir for inhibiting melt contamination
    11.
    发明授权
    Weir for inhibiting melt contamination 有权
    用于抑制熔体污染的堰

    公开(公告)号：US09476141B2

    公开(公告)日：2016-10-25

    申请号：US14341584

    申请日：2014-07-25

    Applicant: SunEdison, Inc.

    Inventor： Tirumani Swaminathan

    IPC: C30B15/12 ,  C30B15/02 ,  C30B29/06

    CPC classification number: C30B15/12 ,  C30B15/02 ,  C30B29/06 ,  Y10T117/1052 ,  Y10T117/1064

    Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.

    Abstract translation: 提供了用于从熔体生长晶锭的系统。 该系统包括第一坩埚，屏障和屏蔽。 第一坩埚具有形成用于容纳熔体的第一腔的第一基底和第一侧壁。 屏障设置在第一坩埚的第一腔内，以阻止熔体从屏障的外部移动到屏障的内侧。 阻挡层从第一基底延伸到熔体之上。 屏障具有向上延伸的内臂和外臂，以在它们之间形成通道。 护罩在内臂和外臂之间向下延伸以阻止污染物通过。

    Methods and systems for deterministic and multithreaded script objects and script engine
    12.
    发明授权
    Methods and systems for deterministic and multithreaded script objects and script engine 有权
    确定性和多线程脚本对象和脚本引擎的方法和系统

    公开(公告)号：US09459935B2

    公开(公告)日：2016-10-04

    申请号：US14142526

    申请日：2013-12-27

    Applicant: SunEdison, Inc.

    Inventor： Benno Orschel

    IPC: G06F9/44 ,  G06F9/52 ,  G06F9/48 ,  G05B19/418

    CPC classification number: G06F9/526 ,  G05B19/418 ,  G06F9/4843 ,  Y02P90/02

    Abstract: A computing device is configured to execute a first instance of a single-threaded script engine in a first thread associated with a first execution context, wherein the first instance of the single-threaded script engine accesses at least one shared script object through a first reference counted script base value object. The computing device is also configured to concurrently execute a second instance of the single-threaded script engine in a second thread_associated with a second execution context, wherein the second instance of the single-threaded script engine accesses the at least one shared script object through a second reference counted script base value object. The script engine does not switch between the execution contexts.

    Abstract translation: 计算设备被配置为在与第一执行上下文相关联的第一线程中执行单线程脚本引擎的第一实例，其中单线程脚本引擎的第一实例通过第一引用访问至少一个共享脚本对象 计数脚本基础值对象。 计算设备还被配置为在与第二执行上下文相关联的第二线程中同时执行单线程脚本引擎的第二实例，其中单线程脚本引擎的第二实例通过以下方式访问至少一个共享脚本对象 第二个引用计数的脚本基础值对象。 脚本引擎不会在执行上下文之间切换。

    SYSTEMS FOR CONTINUOUS GROWING OF INGOTS
    13.
    发明申请
    SYSTEMS FOR CONTINUOUS GROWING OF INGOTS 审中-公开
    连续生长的系统

    公开(公告)号：US20160281260A1

    公开(公告)日：2016-09-29

    申请号：US15008640

    申请日：2016-01-28

    Applicant: SunEdison, Inc.

    Inventor： David L. Bender

    IPC: C30B15/12 ,  C30B15/02 ,  C30B29/06 ,  C30B15/22 ,  C30B15/04 ,  C30B15/00 ,  C30B15/14

    CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

    Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

    Abstract translation: 基于用于连续生长单晶锭的切克劳斯基方法的改进的系统包括低纵横比，大直径和基本平坦的坩埚，包括围绕晶体的可选堰。 低长宽比坩埚基本上消除了对流，并降低了成品单晶硅锭中的氧含量。 单独的水平控制的硅预熔化室向生长坩埚提供连续的熔融硅源，有利地消除了在晶体拉制过程中垂直行进和坩埚升高系统的需要。 坩埚下面的多个加热器在熔体上建立相应的热区。 加热器的热输出被单独控制，以提供跨熔体和晶体/熔融界面的最佳热分布，以改善晶体生长。 提供多个晶体拉伸室用于连续处理和高通量。

    PHOTOVOLTAIC MODULES INCLUDING EXTERNAL BYPASS DIODES
    14.
    发明申请
    PHOTOVOLTAIC MODULES INCLUDING EXTERNAL BYPASS DIODES 审中-公开
    包含外部旁路二极管的光伏模块

    公开(公告)号：US20160118935A1

    公开(公告)日：2016-04-28

    申请号：US14923701

    申请日：2015-10-27

    Applicant: SunEdison Inc.

    Inventor： Jean Pascal Posbic ,  Dinesh Somabhai Amin

    IPC: H02S40/34 ,  H05K7/02 ,  G01R31/40 ,  H02S30/10 ,  H02S40/32

    CPC classification number: H02S40/34 ,  H01L31/02021 ,  H02S40/30 ,  H05K7/02 ,  Y02E10/50

    Abstract: A photovoltaic (PV) module includes a laminate, a frame, a junction box, and an electronic assembly. The laminate includes a top surface, a bottom surface, and a plurality of PV cells disposed between the top surface and the bottom surface. The frame circumscribes at least a portion of the laminate. The junction box is attached adjacent to the bottom surface of the laminate and electrically coupled to the plurality of PV cells. The electronic assembly is attached adjacent to the bottom surface of the laminate and external of the junction box. The electronic assembly includes a bypass diode electrically coupled to at least one PV cell of the plurality of PV cells.

    Abstract translation: 光伏（PV）模块包括层压板，框架，接线盒和电子组件。 层压板包括顶表面，底表面和设置在顶表面和底表面之间的多个PV电池。 框架限定层压板的至少一部分。 接线盒邻近层叠体的底表面附接，并电耦合到多个PV电池。 电子组件邻近层压板的底表面和接线盒的外部附接。 电子组件包括电耦合到多个PV电池中的至少一个PV电池的旁路二极管。

    METHODS AND SYSTEMS FOR SCHEDULE-BASED AND ALERT-BASED CLEANING OF PV SYSTEMS
    15.
    发明申请
    METHODS AND SYSTEMS FOR SCHEDULE-BASED AND ALERT-BASED CLEANING OF PV SYSTEMS 审中-公开
    用于光伏系统的基于时间安排和基于ALERT的清洁的方法和系统

    公开(公告)号：US20160104084A1

    公开(公告)日：2016-04-14

    申请号：US14878325

    申请日：2015-10-08

    Applicant: SunEdison, Inc.

    Inventor： Joseph Philip ,  Andras Boross ,  Stephen James Voss ,  Christopher Andrew Clarke ,  Anastasios Golnas ,  Nagendra Cherukupalli

    IPC: G06Q10/06

    CPC classification number: G06Q10/06311 ,  H02S50/00

    Abstract: A method for scheduling cleaning of a photovoltaic (“PV”) system is implemented by a soiling monitoring computer system. The method includes determining a soiling level and a soiling rate for a photovoltaic (PV) system, calculating a cost associated with cleaning the PV system at each of a plurality of possible cleaning times, determining an expected energy output gain associated with cleaning the PV system at each of the plurality of possible times based on the soiling level and the soiling rate, calculating an expected benefit associated with cleaning the PV system at each of the plurality of possible cleaning times based on the expected energy output gain associated with each possible cleaning time, determining a first time of the plurality of possible times when the expected benefit exceeds the cost, and scheduling a cleaning time based on at least the determined first time.

    Abstract translation: 通过污染监测计算机系统来实现调度光伏（“PV”）系统清洁的方法。 该方法包括确定光伏（PV）系统的污染水平和污染率，在多个可能的清洁时间中的每一个处计算与清洁PV系统相关联的成本，确定与清洁PV系统相关联的预期能量输出增益 基于污染水平和污染率在多个可能的时间中的每个时间，基于与每个可能的清洁时间相关联的预期能量输出增益来计算与在多个可能的清洁时间中的每一个清洁PV系统相关联的预期利益 当所述预期利益超过所述成本时确定所述多个可能时间的第一时间，以及至少基于所确定的第一时间来调度清洁时间。

    Crystal growing systems and methods including a passive heater
    19.
    发明授权
    Crystal growing systems and methods including a passive heater 有权

    公开(公告)号：US10358740B2

    公开(公告)日：2019-07-23

    申请号：US14341580

    申请日：2014-07-25

    Applicant: SunEdison, Inc.

    Inventor： Tirumani Swaminathan

    IPC: C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  C30B15/00

    Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

    Liner assemblies for substrate processing systems
    20.
    发明授权
    Liner assemblies for substrate processing systems 有权

    公开(公告)号：US10344380B2

    公开(公告)日：2019-07-09

    申请号：US14176263

    申请日：2014-02-10

    Applicant: SunEdison, Inc.

    Inventor： Arash Abedijaberi ,  Shawn George Thomas

    IPC: C23C16/00 ,  C23C16/455 ,  H01L21/00

    Abstract: A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

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