公开(公告)号：US08218031B2

公开(公告)日：2012-07-10

申请号：US12583054

申请日：2009-08-13

申请人： Garen Fujimaki ,  Hiroshi Kakuda ,  Takao Morita ,  Takashi Sakuma ,  Kayo Ishii ,  Yuka Endo

发明人： Garen Fujimaki ,  Hiroshi Kakuda ,  Takao Morita ,  Takashi Sakuma ,  Kayo Ishii ,  Yuka Endo

IPC分类号： H04N5/76

CPC分类号： H04N5/772 ,  H04N1/00127 ,  H04N1/00323 ,  H04N1/32128 ,  H04N9/8233 ,  H04N21/42202 ,  H04N21/4223 ,  H04N21/4334 ,  H04N21/435 ,  H04N21/8133 ,  H04N2101/00 ,  H04N2201/3205 ,  H04N2201/3215 ,  H04N2201/3252 ,  H04N2201/3253 ,  H04N2201/3277 ,  H04N2201/3281

摘要： An imaging apparatus includes: a captured image data generation unit generating captured image data by capturing a subject; a positional information acquisition unit acquiring positional information indicating a position at which the captured image data are generated; an area determination unit determining whether the position indicated by the acquired positional information is included in a positional information conversion area for converting the acquired positional information; a positional information conversion unit, when the area determination unit determines that the position indicated by the acquired positional information is included in the positional information conversion area, converting the acquired positional information into positional information indicating a position different from the position indicated by the acquired positional information; and a record control unit, when recording the generated captured image data, carrying out control to record the generated captured image data in association with the positional information converted by the positional information conversion unit.

摘要翻译： 一种成像装置，包括：拍摄图像数据生成单元，其通过拍摄对象来生成拍摄图像数据; 位置信息获取单元获取指示捕获的图像数据生成的位置的位置信息; 确定所获取的位置信息所指示的位置是否包括在用于转换获取的位置信息的位置信息转换区域中的区域确定单元; 位置信息转换单元，当区域确定单元确定所获取的位置信息所指示的位置被包括在位置信息转换区域中时，将获取的位置信息转换成指示与所获取位置指示的位置不同的位置的位置信息 信息; 以及记录控制单元，当记录所生成的拍摄图像数据时，执行与由位置信息转换单元转换的位置信息相关联地生成的拍摄图像数据的控制。

公开(公告)号：US20110229752A1

公开(公告)日：2011-09-22

申请号：US13050115

申请日：2011-03-17

申请人： Takashi SAKUMA ,  Masahiko Ueta ,  Kohei Nishizaka ,  Masatoshi Sashika ,  Yasuhisa Yamasaki

发明人： Takashi SAKUMA ,  Masahiko Ueta ,  Kohei Nishizaka ,  Masatoshi Sashika ,  Yasuhisa Yamasaki

IPC分类号： H01M2/16 ,  B05D5/12

CPC分类号： H01M2/145 ,  H01M2/14 ,  H01M2/162 ,  H01M2/1653 ,  H01M2/1666 ,  H01M10/34

摘要： A polyethylene resin surface is formed on a surface of a nonwoven fabric, which is made of polypropylene resin as a main component material and structured with bonded pieces of the polypropylene resin. The polyethylene resin surface is then subjected to a hydrophilization treatment, such as a radical reaction treatment or a sulfonation treatment. As a result, a secondary battery separator having a high mechanical strength along with a high hydrophilic nature, and a secondary battery using that secondary battery separator are provided.

摘要翻译： 在由聚丙烯树脂作为主要成分材料制成并由聚丙烯树脂的粘合片构成的无纺织物的表面上形成聚乙烯树脂表面。 然后对聚乙烯树脂表面进行亲水处理，例如自由基反应处理或磺化处理。 结果，提供了具有高机械强度和高亲水性的二次电池隔膜和使用该二次电池隔板的二次电池。

公开(公告)号：US07889217B2

公开(公告)日：2011-02-15

申请号：US11224957

申请日：2005-09-14

申请人： Takashi Sakuma ,  Masanori Nomura ,  Hiroshi Nagatani ,  Haruhiko Sakata ,  Hiroyuki Yoshida ,  Hirooki Tajima

发明人： Takashi Sakuma ,  Masanori Nomura ,  Hiroshi Nagatani ,  Haruhiko Sakata ,  Hiroyuki Yoshida ,  Hirooki Tajima

IPC分类号： G09G5/02

CPC分类号： G06F3/1431 ,  G06F3/04897 ,  G09G2360/02

摘要： A display control apparatus for controlling display in a first display device that displays a predetermined display range of an entire supplied image is provided. The display control apparatus includes an image scaledown unit adapted to scale down a first image based on a scaledown ratio that is preset in accordance with the size of the display range relative to the entire image; and a display control unit adapted to control display of the first image that is scaled down by the image scaledown unit in the first display device.

摘要翻译： 提供一种显示控制装置，用于控制显示整个提供的图像的预定显示范围的第一显示装置中的显示。 显示控制装置包括图像缩小单元，其适于基于根据与整个图像的显示范围的大小预设的缩小比例来缩小第一图像; 以及显示控制单元，其适于控制由第一显示装置中的图像缩小单元缩小的第一图像的显示。

公开(公告)号：US20100167540A1

公开(公告)日：2010-07-01

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768 ,  C23C14/34

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 公开了一种仅通过等离子体溅射将金属嵌入设置在诸如半导体晶片W的处理对象表面的凹部中的技术。 金属是铜，作为典型的例子。 该凹部具有作为典型实例的直径或宽度为100nm或更小的微孔或沟槽。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片W的载物台的偏置功率被设定为确保在晶片W的表面上由金属颗粒的吸入引起的金属沉积速率为 基本上等于通过等离子体的溅射蚀刻的速率。 在扩散步骤中，晶片W保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

公开(公告)号：US20090183984A1

公开(公告)日：2009-07-23

申请号：US12223383

申请日：2007-01-26

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： C23C14/34 ,  C23C14/14

CPC分类号： C23C14/046 ,  C23C14/345 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L2221/1089

摘要： The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs.The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.

摘要翻译： 本发明涉及能够在不形成突出端的情况下在凹陷中形成种子膜的种子膜形成方法。 沉积用于电镀的种子膜的种子膜形成方法包括以下步骤：通过在能够被抽真空的处理容器中用等离子体电离金属靶产生金属离子; 以及通过向所述工件提供偏置功率以将金属离子吸引到所述工件上，在安装在放置在所述处理容器中的工作台上的工件的设置有凹部的表面上沉积金属膜; 其中，通过使用确定为使得沉积在所述工件的表面上的金属膜不会被溅射的偏置功率来沉积所述金属膜的膜沉积步骤，以及通过停止产生来中断所述金属膜的沉积的膜沉积中断步骤 金属离子交替重复多次。

公开(公告)号：US20090087583A1

公开(公告)日：2009-04-02

申请号：US12226610

申请日：2007-04-10

申请人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

摘要： An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage 34 disposed in a processing vessel 24 capable of being vacuumized. Thereafter, a plasma is generated in the processing vessel 24, so that a metal target 70 is ionized by the plasma to generate metal ions in the processing vessel 24. Then, a thin film is deposited on the surface of the object to be processed including a surface in the recess, by supplying a bias power to the stage 34 so as to draw the metal ions into the object to be processed placed on the stage 34 by the supplied bias power. In the present invention, a wattage of the bias power is varied within a range in which the surface of the object to be processed is not substantially sputtered.

摘要翻译： 将具有在其表面形成的凹部的待处理物体（例如，半导体晶片W）放置在能够被真空化的处理容器24中的台34上。 此后，在处理容器24中产生等离子体，使得金属靶70被等离子体离子化，以在处理容器24中产生金属离子。然后，在待处理物体的表面上沉积薄膜，其中包括 通过向台34提供偏置功率以便通过所提供的偏置功率将金属离子拉入放置在载物台34上的被处理物体中，从而在凹部中的表面。 在本发明中，偏置功率的功率在被处理物体的表面基本上不被溅射的范围内变化。

公开(公告)号：US20080211031A1

公开(公告)日：2008-09-04

申请号：US12040426

申请日：2008-02-29

申请人： Takashi SAKUMA

发明人： Takashi SAKUMA

IPC分类号： H01L21/314 ,  H01L21/8236

CPC分类号： H01L21/823412 ,  H01L21/3145

摘要： A device isolation film is formed in a semiconductor substrate at a border portion between a first region and a second region for defining a first active region in the first region and a second active region in the second region. A gate insulating film and a gate electrode is formed over the semiconductor substrate in the first region. A first photoresist film covering the second region and having an opening exposing the first active region and having an edge on the border portion of the opening positioned nearer the second active region than a middle of the device isolation film is formed over the semiconductor substrate with the gate electrode. Impurity ions are implanted from a direction tilted from a normal direction of the semiconductor substrate with the first photoresist film and the gate electrode as a mask to form pocket regions in the semiconductor substrate on both sides of the gate electrodes.

摘要翻译： 器件隔离膜形成在第一区域和第二区域之间的边界部分的半导体衬底中，用于限定第一区域中的第一有源区和第二区域中的第二有源区。 在第一区域中的半导体衬底上形成栅极绝缘膜和栅电极。 第一光致抗蚀剂膜覆盖第二区域并且具有暴露第一有源区并且在位于第二有源区的位于第二有源区的边界的边界部分上的边缘的开口形成在半导体衬底的上方， 栅电极。 从第一光致抗蚀剂膜和栅极电极作为掩模从从半导体衬底的法线方向倾斜的方向注入杂质离子，以在栅极两侧的半导体衬底中形成袋区。

公开(公告)号：US20070026921A1

公开(公告)日：2007-02-01

申请号：US10554912

申请日：2004-03-10

申请人： Hiroyuki Fukui ,  Takashi Sakuma

发明人： Hiroyuki Fukui ,  Takashi Sakuma

IPC分类号： A63F9/24

CPC分类号： G07F17/3211 ,  G07F17/3216

摘要： Each of a plurality of reels variably presents a plurality of symbols. A cover body is formed with a plurality of observation windows. The cover body covers the reels such that the reels are selectively viewed through one of the observation windows in accordance with a condition of a game.

摘要翻译： 多个卷轴中的每一个可变地呈现多个符号。 盖体形成有多个观察窗。 盖体覆盖卷轴，使得根据游戏的条件，通过观察窗中的一个选择性地观察卷轴。

公开(公告)号：US5118368A

公开(公告)日：1992-06-02

申请号：US712187

申请日：1991-06-07

申请人： Tsuyoshi Masumoto ,  Akihisa Inoue ,  Takashi Sakuma ,  Toshisuke Shibata

发明人： Tsuyoshi Masumoto ,  Akihisa Inoue ,  Takashi Sakuma ,  Toshisuke Shibata

IPC分类号： C22C23/00 ,  C22C45/00

CPC分类号： C22C45/005

摘要： Disclosed are high strength magnesium-based alloys consisting essentially of a composition represented by the general formula (I) Mg.sub.a M.sub.b X.sub.d, (II) Mg.sub.a Ln.sub.c X.sub.d or (III) Mg.sub.a M.sub.b Ln.sub.c X.sub.d, wherein M is at least one element selected from the group consisting of Ni, Cu, Al, Zn and Ca; Ln is at least one element selected from the group consisting of Y, La, Ce, Sm and Nd or a misch metal (Mm) which is a combination of rare earth elements; X is at least one element selected from the group consisting of Sr, Ba and Ga; and a, b, c and d are, in atomic percent, 55.ltoreq.a.ltoreq.95, 3.ltoreq.b.ltoreq.25, 1.ltoreq.c.ltoreq.15 and 0.5.ltoreq.d.ltoreq.30, the alloy being at least 50 percent by volume composed of an amorphous phase. Since the magnesium-based alloys of the present invention have high levels of hardness, strength, heat-resistance and workability, the magnesium-based alloys are useful for high strength materials and high heat-resistant materials in various industrial applications.

公开(公告)号：US4980515A

公开(公告)日：1990-12-25

申请号：US369039

申请日：1989-06-20

申请人： Takashi Sakuma ,  Katsuji Sokai

发明人： Takashi Sakuma ,  Katsuji Sokai

IPC分类号： H01F27/34 ,  H01F27/04

CPC分类号： H01F27/04

摘要： An electrical apparatus with an in-tank shield has a tank which houses an electrical device such as a transformer. A plurality of bushings extend into the tank. Inner shields having good electrical conductivity surround the inner portions of the bushings and are connected to the outer portions of the bushings. A shorting plate having a good electrical conductivity connects the inner shields to each other.